Jia-min Chen, Z. Ruan, Gecai Chen, Jun-Guo Zhu, Yin Ren, Li Zhu
{"title":"Risk factors of incomplete endothelialization after left atrial appendage occlusion in patients with atrial fibrillation","authors":"Jia-min Chen, Z. Ruan, Gecai Chen, Jun-Guo Zhu, Yin Ren, Li Zhu","doi":"10.5114/aoms/188529","DOIUrl":null,"url":null,"abstract":"Introduction: We aimed to investigate the risk factors of incomplete device endothelialization (IDE) following left atrial appendage occlusion (LAAO) and provide a nomogram model for predicting the risks of IDE in patients with atrial fibrillation (AF).A total of 145 patients with AF who performed LAAO were included. The endothelialization of the occluder was assessed by computed tomography angiography (CTA) at 3 months after LAAO. Logistic regression analysis was used to explore the risk factors of IDE after LAAO. A nomogram model was constructed to predict the risks of IDE.53 cases with complete endothelialization (CDE group) and 92 cases with IDE (IDE group) were detected at 3 months after LAAO. There was significant difference in mitral regurgitation (MR) [37.7% vs 55.4%, p=0.040], left atrial appendage (LAA) diameter [(2.22±0.36) cm vs (2.61±2.11) cm, p=0.003], occluder size [(2.76±0.36) cm vs (2.93±0.34) cm, p=0.005] and the level of serum urea [(5.78±1.72) mmol/L vs (6.67±2.82) mmol/L, p=0.020] between the two groups. Serum urea level, MR, LAA diameter and large occluder size were independent risk factors for IDE (p=0.038, 0.041, 0.007 and 0.006, respectively). A nomogram prediction model based on MR, LAA diameter, occluder size and serum urea was constructed with a C-index of 0.70, while C-index of verification 0.708.MR, higher serum urea level, LAA diameter and large occluder size may contribute to IDE after LAAO. The nomogram model based on MR, LAA diameter, occluder size and serum urea can be used to predict the IDE after LAAO.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":" 33","pages":""},"PeriodicalIF":4.7000,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"3","ListUrlMain":"https://doi.org/10.5114/aoms/188529","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Introduction: We aimed to investigate the risk factors of incomplete device endothelialization (IDE) following left atrial appendage occlusion (LAAO) and provide a nomogram model for predicting the risks of IDE in patients with atrial fibrillation (AF).A total of 145 patients with AF who performed LAAO were included. The endothelialization of the occluder was assessed by computed tomography angiography (CTA) at 3 months after LAAO. Logistic regression analysis was used to explore the risk factors of IDE after LAAO. A nomogram model was constructed to predict the risks of IDE.53 cases with complete endothelialization (CDE group) and 92 cases with IDE (IDE group) were detected at 3 months after LAAO. There was significant difference in mitral regurgitation (MR) [37.7% vs 55.4%, p=0.040], left atrial appendage (LAA) diameter [(2.22±0.36) cm vs (2.61±2.11) cm, p=0.003], occluder size [(2.76±0.36) cm vs (2.93±0.34) cm, p=0.005] and the level of serum urea [(5.78±1.72) mmol/L vs (6.67±2.82) mmol/L, p=0.020] between the two groups. Serum urea level, MR, LAA diameter and large occluder size were independent risk factors for IDE (p=0.038, 0.041, 0.007 and 0.006, respectively). A nomogram prediction model based on MR, LAA diameter, occluder size and serum urea was constructed with a C-index of 0.70, while C-index of verification 0.708.MR, higher serum urea level, LAA diameter and large occluder size may contribute to IDE after LAAO. The nomogram model based on MR, LAA diameter, occluder size and serum urea can be used to predict the IDE after LAAO.
期刊介绍:
ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric.
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