Optoelectronic properties of perovskite thin films derived from lead sulfide via radio frequency magnetron sputtering: effect of the substrate temperature

Sittan Wongcharoen, Itaru Raifuku, Xianhuan Yu, Hidenori Kawanishi, Yvan Bonnassieux, Pere Roca I Cabarrocas, Y. Uraoka
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Abstract

Methylammonium lead iodide (CH3NH3PbI3; MAPbI3) films were fabricated from sputtered lead sulfide (PbS) films prepared at various substrate temperatures according to the Thornton structural zone model. PbS films were converted to lead iodide (PbI2) and finally to MAPbI3 in a two-step gas-phase reaction. The increase in substrate temperature caused the morphology to change to fibrous interconnected grains, which played an important role in improving the optoelectrical properties of perovskite films. Moreover, enhanced charge transport of MAPbI3 films was observed owing to the fibrous interconnected PbI2 precursor, which was confirmed by higher absorption coefficient and longer carrier lifetime.
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通过射频磁控溅射法获得的硫化铅过氧化物薄膜的光电特性:基底温度的影响
根据桑顿结构区模型,从在不同基底温度下制备的溅射硫化铅(PbS)薄膜制备了甲基铵碘化铅(CH3NH3PbI3;MAPbI3)薄膜。PbS 薄膜通过两步气相反应转化为碘化铅 (PbI2),最后转化为 MAPbI3。衬底温度的升高使其形态转变为纤维状的互连晶粒,这对改善包晶体薄膜的光电特性起到了重要作用。此外,纤维状互连的 PbI2 前驱体增强了 MAPbI3 薄膜的电荷传输,更高的吸收系数和更长的载流子寿命证实了这一点。
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