Avalanche Gain Modeling Revisited in HgCdTe APDs

IF 2.5 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Electronic Materials Pub Date : 2024-06-06 DOI:10.1007/s11664-024-11200-y

Johan Rothman, Julie Abergel, Antoine Coquiard, Sylvain Gout, Maxime Lonjon, Anaëlle Montel, Loïc Lechevallier, Alexandre Ferron, Amaury Mavel, Samantha Bustillos-Vasco, Sebastien Renet, Frederic Berger, Aurelie Vandeneynde, Sandy Brunet-Manquat

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Abstract

The gain in short-wave infrared and mid-wave infrared HgCdTe avalanche photodiodes (APDs) with large diameters has been analyzed using an already established model based on an empirical expression proposed by Okuto–Crowell (OC) and a new model derived for the impact ionization in HgCdTe. This model is based on a simplified but physical description of the carrier dynamics during the multiplication. It is shown that OC model has limitations in giving a precise description of the measured avalanche gains, and that is difficult, in view of present available data, to derive a universal expression for the model parameters to predict the avalanche gain in HgCdTe APDs as a function of the Cd composition, operating temperature, and multiplication layer geometry. The new model is shown to give a better fit of the gain data, associated with a scaling of the model parameters with the band gap.

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重新审视碲化镉汞 APD 的雪崩增益模型

利用Okuto-Crowell （OC）提出的经验表达式和新导出的HgCdTe冲击电离模型，分析了大直径HgCdTe雪崩光电二极管（APDs）短波红外和中波红外的增益。该模型是基于对乘法过程中载流子动力学的简化的物理描述。结果表明，OC模型在给出测量雪崩增益的精确描述方面存在局限性，而且根据现有的数据，很难推导出模型参数的通用表达式来预测HgCdTe apd中雪崩增益作为Cd组成，工作温度和倍增层几何形状的函数。结果表明，新模型能更好地拟合增益数据，并与模型参数随带隙的缩放有关。

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来源期刊

Journal of Electronic Materials 工程技术-材料科学：综合

CiteScore

4.10

自引率

4.80%

发文量

693

审稿时长

3.8 months

期刊介绍： The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.