Steven Bel, Clément Lobre, Sarah Petit, Marc Veillerot, Giacomo Badano
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引用次数: 0
Abstract
Increasing interest in reducing the size, weight, and power consumption (SWaP) of devices motivates the development of high-operating-temperature (HOT) infrared imaging systems. HgCdTe photodiodes are in a privileged position to produce HOT detectors with background-limited infrared performance (BLIP). However, the proportion of unstable pixel responses tends to rise with increased operating temperature and degrades the detection performance. Multiple studies suggest that this issue is related to the surface states generated and affected by the manufacturing steps. In this work, native oxide and a residual halogen impurity susceptible to being introduced at the interface during passivation processes were investigated. For this purpose, surface contaminations were intentionally amplified to study their impact on the interface behavior of simplified electrical test structures. The chemical environments of the sample surface before insulator deposition were analyzed using x-ray photoelectron spectroscopy (XPS). After passivation deposition, time-of-flight secondary ion mass spectrometry (TOF-SIMS) enabled the evaluation of the contaminants’ presence levels at the interface before and after annealing. The influence of the contaminants on the interface behavior was studied using capacitance–voltage measurements on metal–insulator–semiconductor structures (C(V) MIS). Finally, photoluminescence decay (PLD) enabled the extraction of the minority charge carrier effective lifetime to determine the contaminants’ global impact on the structures. The coupling of physicochemical (XPS, TOF-SIMS) and electro-optical characterization techniques (PLD, C(V) MIS) allowed us to evaluate and discuss the effects of interfacial oxide and halogen impurities on passivation quality and subsequent device electrical behavior.
期刊介绍：
The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications.
Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field.
A journal of The Minerals, Metals & Materials Society.
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