Effects of Electron Blocking Layer Thickness on the Electrical and Optical Properties of AlGaN-Based Deep-Ultraviolet Light-Emitting Diode

IF 2.5 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Electronic Materials Pub Date : 2024-06-05 DOI:10.1007/s11664-024-11190-x

Mohammad Amirul Hairol Aman, Ahmad Fakhrurrazi Ahmad Noorden, Muhammad Zamzuri Abdul Kadir, Wan Hazman Danial, Suzairi Daud

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Abstract

The aluminum gallium nitride (AlGaN)-based deep-ultraviolet light-emitting diode (DUV-LED) has been a prominent device due to its contribution in various fields. The electron blocking layer (EBL) is an additional layer in the epitaxy of the DUV-LED with the aim of reducing the overflow of electrons and improving the hole injection, consequently increasing the performance of the DUV-LED. However, the threshold of the EBL thickness and its influence on the electrical and optical properties is still not fully understood. Hence, the purpose of this research is to investigate the effects of varying the EBL thickness, ranging from 5 nm up to 60 nm, and investigate the threshold of EBL thickness for the AlGaN-based DUV-LED. The analysis includes the internal quantum efficiency (IQE), luminescence spectrum, band diagram behavior, and the current density of the carrier. It is found that EBL thickness of 15 nm produces the highest IQE (39.69%) for the DUV-LED with a single quantum well structure, where the wavelength emitted is ~ 257 nm, which is within the ultraviolet C (UVC) range.

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电子阻挡层厚度对氮化铝基深紫外发光二极管电气和光学特性的影响

氮化铝镓（AlGaN）基深紫外发光二极管（DUV-LED）由于其在各个领域的贡献而成为突出的器件。电子阻挡层（EBL）是DUV-LED外延层的附加层，其目的是减少电子溢出和改善空穴注入，从而提高DUV-LED的性能。然而，EBL厚度的阈值及其对电学和光学性质的影响尚不完全清楚。因此，本研究的目的是研究在5 nm到60 nm范围内改变EBL厚度的影响，并研究基于algan的DUV-LED的EBL厚度阈值。分析包括内部量子效率（IQE）、发光光谱、带图行为和载流子的电流密度。结果表明，当EBL厚度为15 nm时，单量子阱结构DUV-LED的IQE最高（39.69%），其发射波长为~ 257 nm，在UVC范围内。

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来源期刊

Journal of Electronic Materials 工程技术-材料科学：综合

CiteScore

4.10

自引率

4.80%

发文量

693

审稿时长

3.8 months

期刊介绍： The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.