Limin Ma, Yuzhang Chen, Qiang Jia, Jing Han, Yishu Wang, Dan Li, Hongqiang Zhang, Guisheng Zou, Fu Guo
{"title":"Construction of microstructures on the Cu substrate using ultrafast laser processing to enhance the bonding strength of sintered Ag nanoparticles","authors":"Limin Ma, Yuzhang Chen, Qiang Jia, Jing Han, Yishu Wang, Dan Li, Hongqiang Zhang, Guisheng Zou, Fu Guo","doi":"10.2351/7.0001327","DOIUrl":null,"url":null,"abstract":"Silver nanoparticle (Ag NP) pastes become a potential die-attachment material with the increased electronic power density. However, the weakness of bonding interface between sintered Ag NPs and bare Cu substrate limits the applications of the Ag NPs paste, thereby reducing the shear strength of the sintered joint. In this work, ultrafast laser processing is utilized to enhance the bonding strength of the sintered Ag joint by fabricating a microstructure interface. The microstructure dimensions are tunable by controlling laser parameters, and then high-strength joints could be obtained. Different substrate microstructures were constructed, and the enhanced bonding mechanism was analyzed by characterizing the cross section and fracture surface morphologies of joints. The ultrafast laser processing could increase the surface energy of Cu substrates to form a more reliable connection with Ag NPs and more energy required for crack extension with the increasing connection area, thereby resulting in a significant improvement in the shear strength of the Ag NP joints. The patterned microstructures on the Cu substrate using this technique showed improved surface energy and increased number of connection areas on the substrate, showing potential for the use in third-generation semiconductors for highly reliable packaging.","PeriodicalId":508142,"journal":{"name":"Journal of Laser Applications","volume":"29 6","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Laser Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2351/7.0001327","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Silver nanoparticle (Ag NP) pastes become a potential die-attachment material with the increased electronic power density. However, the weakness of bonding interface between sintered Ag NPs and bare Cu substrate limits the applications of the Ag NPs paste, thereby reducing the shear strength of the sintered joint. In this work, ultrafast laser processing is utilized to enhance the bonding strength of the sintered Ag joint by fabricating a microstructure interface. The microstructure dimensions are tunable by controlling laser parameters, and then high-strength joints could be obtained. Different substrate microstructures were constructed, and the enhanced bonding mechanism was analyzed by characterizing the cross section and fracture surface morphologies of joints. The ultrafast laser processing could increase the surface energy of Cu substrates to form a more reliable connection with Ag NPs and more energy required for crack extension with the increasing connection area, thereby resulting in a significant improvement in the shear strength of the Ag NP joints. The patterned microstructures on the Cu substrate using this technique showed improved surface energy and increased number of connection areas on the substrate, showing potential for the use in third-generation semiconductors for highly reliable packaging.
随着电子功率密度的提高,银纳米粒子(Ag NP)浆料成为一种潜在的芯片连接材料。然而,烧结银纳米粒子与裸铜基板之间的结合界面较弱,这限制了银纳米粒子浆料的应用,从而降低了烧结连接的剪切强度。在这项工作中,利用超快激光加工技术,通过制造微结构界面来增强烧结银接合点的结合强度。通过控制激光参数,可以调整微结构尺寸,从而获得高强度接头。研究人员构建了不同的基底微结构,并通过分析接头的横截面和断裂面形态,分析了增强粘接的机理。超快激光加工可提高铜基材的表面能,使其与 Ag NPs 形成更可靠的连接,并且随着连接面积的增加,裂纹扩展所需的能量也增加,从而显著提高了 Ag NP 接头的剪切强度。使用该技术在铜基底上形成的图案化微结构显示出基底表面能的提高和连接区域数量的增加,显示出用于第三代半导体高可靠性封装的潜力。