Sensitivity analysis of junctionless silicon NT-TFET and performance metrics comparison with the silicon NT-TFET

IF 2.6 4区 材料科学 Q3 CHEMISTRY, MULTIDISCIPLINARY Journal of Nanoparticle Research Pub Date : 2024-06-11 DOI:10.1007/s11051-024-06045-9
P. Rajendiran, A. Nisha Justeena, Jihene Mrabet, Swaroop Ramasamy, P. D. Selvam, D. Nirmal
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Abstract

In this article, we investigated the sensitivity of the junctionless silicon nanotube tunnel field-effect transistor (JLSiNT-TFET). To accomplish this, we utilized the Sentaurus TCAD software tool to generate the 3D JLSiNT-TFET device. The sensitivity analysis is conducted using the device’s geometrical parameters, including channel length (Lg), dielectric oxide (Tox) thickness, and silicon (tube wall) thickness (Tsi). This analysis is based on various device metrics, such as ON current (ION), OFF current (IOFF), sub-threshold swing (SS), threshold voltage (Vth), and cut-off frequency (fT). We observed that increasing the gate length (Lg) and tube wall thickness (Tsi) leads to sensitivity in ION, SS, and fT for larger values, while these parameters exhibited lower sensitivity to IOFF and Vth. Furthermore, when the dielectric oxide thickness (Tox) increased, we noted an increase in the sensitivity of IOFF current, accompanied by a decrease in ION and fT. Comparing the proposed device to the SiNT-TFET, we found significant improvements: ION improved by 39.51%, the ION/IOFF ratio increased by 40%, transconductance (gm) rose by 28.47%, and fT surged by 94.81%. Finally, the JLSiNT-TFET device metrics confirmed that substantial superiority over the silicon nanotube tunnel field-effect transistor (SiNT-TFET).

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无结硅 NT-TFET 的灵敏度分析以及与硅 NT-TFET 的性能指标比较
在本文中,我们研究了无结硅纳米管隧道场效应晶体管(JLSiNT-TFET)的灵敏度。为此,我们利用 Sentaurus TCAD 软件工具生成了三维 JLSiNT-TFET 器件。灵敏度分析使用器件的几何参数进行,包括沟道长度 (Lg)、介质氧化物 (Tox) 厚度和硅 (管壁) 厚度 (Tsi)。该分析基于各种器件指标,如导通电流 (ION)、关断电流 (IOFF)、亚阈值摆幅 (SS)、阈值电压 (Vth) 和截止频率 (fT)。我们观察到,增加栅极长度 (Lg) 和管壁厚度 (Tsi) 会导致 ION、SS 和 fT 的灵敏度增大,而这些参数对 IOFF 和 Vth 的灵敏度较低。此外,当氧化介质厚度 (Tox) 增加时,我们注意到 IOFF 电流灵敏度增加,同时 ION 和 fT 下降。将所提出的器件与 SiNT-TFET 相比,我们发现有了显著的改进:ION 提高了 39.51%,ION/IOFF 比提高了 40%,跨导 (gm) 提高了 28.47%,fT 激增了 94.81%。最后,JLSiNT-TFET 器件指标证实,它比硅纳米管隧道场效应晶体管(SiNT-TFET)有很大的优越性。
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来源期刊
Journal of Nanoparticle Research
Journal of Nanoparticle Research 工程技术-材料科学:综合
CiteScore
4.40
自引率
4.00%
发文量
198
审稿时长
3.9 months
期刊介绍: The objective of the Journal of Nanoparticle Research is to disseminate knowledge of the physical, chemical and biological phenomena and processes in structures that have at least one lengthscale ranging from molecular to approximately 100 nm (or submicron in some situations), and exhibit improved and novel properties that are a direct result of their small size. Nanoparticle research is a key component of nanoscience, nanoengineering and nanotechnology. The focus of the Journal is on the specific concepts, properties, phenomena, and processes related to particles, tubes, layers, macromolecules, clusters and other finite structures of the nanoscale size range. Synthesis, assembly, transport, reactivity, and stability of such structures are considered. Development of in-situ and ex-situ instrumentation for characterization of nanoparticles and their interfaces should be based on new principles for probing properties and phenomena not well understood at the nanometer scale. Modeling and simulation may include atom-based quantum mechanics; molecular dynamics; single-particle, multi-body and continuum based models; fractals; other methods suitable for modeling particle synthesis, assembling and interaction processes. Realization and application of systems, structures and devices with novel functions obtained via precursor nanoparticles is emphasized. Approaches may include gas-, liquid-, solid-, and vacuum-based processes, size reduction, chemical- and bio-self assembly. Contributions include utilization of nanoparticle systems for enhancing a phenomenon or process and particle assembling into hierarchical structures, as well as formulation and the administration of drugs. Synergistic approaches originating from different disciplines and technologies, and interaction between the research providers and users in this field, are encouraged.
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