Holmium-doped TbVO4 as a highly potential magneto-optical crystal for Faraday isolator

IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY Journal of Crystal Growth Pub Date : 2024-06-15 DOI:10.1016/j.jcrysgro.2024.127795
Wenyu He, Hu Liu, Ziqi Guo, Xianchao Zhu
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Abstract

Tb1-xHoxVO4 (THV) magneto-optical crystal with diameter of 27 mm and length of 40 mm was grown by the Czochralski (Cz) technique for the first time. The structural perfection of THV crystal was studied by the high-resolution X-ray diffraction rocking curve measurement, proving the high crystallinity quality of THV. THV shows high transmittance of greater than 75 % within the wavelength range of 665–1600 nm. The Verdet constants of THV at 532, 633 and 1064 nm are 370, 226 and 56 rad·m−1T−1, 40 %–95 % higher than these of commercial TGG crystal. Additionally, THV exhibits lower absorption coefficient (0.05 cm−1), higher magneto-optical figure of merit (175 deg/dB) and extinction ratio (43 dB) at 1064 nm compared with TGG. Evaluation of thermal performance and laser-induced damage threshold of THV were also made to promote the potential application in high-power optical isolators.

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掺钬 TbVO4 作为一种极具潜力的磁光晶体用于法拉第隔离器
首次采用 Czochralski(Cz)技术生长出直径为 27 毫米、长度为 40 毫米的 Tb1-xHoxVO4 (THV)磁光学晶体。通过高分辨率 X 射线衍射摇摆曲线测量研究了 THV 晶体的完美结构,证明了 THV 晶体的高结晶性。在 665-1600 纳米波长范围内,THV 的透射率大于 75%。THV 在 532、633 和 1064 纳米波长的维尔德常数分别为 370、226 和 56 rad-m-1T-1,比商用 TGG 晶体的维尔德常数高 40%-95%。此外,与 TGG 相比,THV 在 1064 纳米波长处的吸收系数(0.05 cm-1)更低、磁光系数(175 deg/dB)和消光比(43 dB)更高。此外,还对 THV 的热性能和激光诱导损伤阈值进行了评估,以促进其在大功率光隔离器中的潜在应用。
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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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