Guangyu Zheng , Yukang Sun , Hong Zhang , Peng Su , Ran Zuo , Lijun Liu
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引用次数: 0
Abstract
This study investigates the controversies about the gas-phase reaction path in the InN MOVPE process. Numerical modeling of the reaction-transport processes in three typical reactors was conducted for main reaction paths. By comparisons of the molar concentrations of the major In-containing species, it was determined that the different approaches of the gas mixing and heating led to three distinct reaction paths. When the non-premixed gas precursors are heated very fast upon entering the reactor, the adduct/amide formation path predominates and the pyrolysis path is negligible (Path 1). When the precursors are mixed at room temperature and heated gradually, the adduct TMIn:NH3 dissociates back into TMIn, with the pyrolysis path dominating. However, the formation of amides DMInNH2 intensifies the generation of nanoparticles (Path 2). When mixing occurs at warm temperature and heated fast, both the pyrolysis and adduct paths co-exist, but their effects are different (path 3). In the CCS reactor the dominant reaction path will be Path 1, while in the vertical reactor with a greater height, Path 2 is predominant. In the pre-mixed horizontal reactor, Path 3 is dominant, the pyrolysis path forms a competition with the adduct path near the substrate, and the adduct path dominating at the top of the reactor.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.