Flat-bands in translated and twisted bilayer Penrose quasicrystals.

IF 2.3 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Journal of Physics: Condensed Matter Pub Date : 2024-07-03 DOI:10.1088/1361-648X/ad5acf
U A Díaz-Reynoso, E Huipe-Domratcheva, O Navarro
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Abstract

Correlated phases in Moiré materials together with the flat-bands in twisted systems play a central role to explain superconductivity in the new twisted bilayer graphene. In this paper, flat-bands are shown to exist in both translated and twisted bilayer of quasicrystals. Such flat-bands arise for different displacements and twisting angles of two-coupled Penrose lattices where Moiré patterns are also shown. Moiré patterns analyzed in this work have at least two inverted worms showing an interference pattern going along the five-fold axes of the pentagon. In order to analyze the behavior of the flat band, our study has been done for fixed interference worm directions but increasing the worm interference density, and for fixed worm interference density but increasing the number of worm directions. In case of rotations, the Moiré patterns that occurs for special angles such asπ/5, 2π/5, 3π/5, 4π/5 andπare discussed in detail because they clearly show flat-bands along with quasicrystalline electronic states at the Fermi level.

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平移和扭曲双层彭罗斯准晶体中的平带。
莫伊尔材料中的相关相以及扭曲系统中的平带在解释新型扭曲双层石墨烯的超导性方面发挥着核心作用。本文证明了平带存在于平移和扭曲的双层准晶体中。这种平带产生于双耦合彭罗斯晶格的不同位移和扭曲角度,其中还显示了 Moir'e 图案。本研究中分析的 Moir'e 图案至少有两个倒置的蠕虫,显示出沿着五边形五折轴的干涉图案。为了分析平带的行为,我们研究了固定干涉蜗杆方向但增加蜗杆干涉密度的情况,以及固定蜗杆干涉密度但增加蜗杆方向数量的情况。在旋转的情况下,我们详细讨论了π/5、2π/5、3π/5、4π/5 和 π 等特殊角度下出现的 Moir'e 图案,因为它们清楚地显示了费米级的平带和准结晶电子态。
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来源期刊
Journal of Physics: Condensed Matter
Journal of Physics: Condensed Matter 物理-物理:凝聚态物理
CiteScore
5.30
自引率
7.40%
发文量
1288
审稿时长
2.1 months
期刊介绍: Journal of Physics: Condensed Matter covers the whole of condensed matter physics including soft condensed matter and nanostructures. Papers may report experimental, theoretical and simulation studies. Note that papers must contain fundamental condensed matter science: papers reporting methods of materials preparation or properties of materials without novel condensed matter content will not be accepted.
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