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Topological Hall effect instigated in kagome Mn3-xSn due to Mn-deficit induced noncoplanar spin structure. 因缺锰诱导非共面自旋结构而在 Kagome Mn$_{3-x}$Sn 中引发的拓扑霍尔效应
IF 2.3 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-11-20 DOI: 10.1088/1361-648X/ad9072
Achintya Low, Susanta Ghosh, Setti Thirupathaiah

Magnetic topological semimetals are manifestations of the interplay between electronic and magnetic phases of matter, leading to peculiar characteristics such as the anomalous Hall effect (AHE) and the topological Hall effect (THE). Mn3Sn is a time-reversal symmetry-broken magnetic Weyl semimetal showing topological characteristics within the Kagome lattice network. This study reveals a large THE in Mn2.8Sn (6% Mn deficit Mn3Sn) at room temperature in thexy-plane, despite being an antiferromagnet. We argue that the magnetocrystalline anisotropy induced noncoplanar spin structure is responsible for the observed THE in these systems. Further, the topological properties of these systems are highly anisotropic, as we observe a large AHE in thezx-plane. We find that Fe doping at the Mn site, Mn3-xFexSn (x= 0.2, 0.25, & 0.35), tunes the topological properties of these systems. These findings promise the realization of potential topotronic applications at room temperature.

磁性拓扑半金属是物质的电子相和磁性相之间相互作用的表现,从而导致反常霍尔效应(AHE)和拓扑霍尔效应(THE)等奇特特性。Mn$_{3}$Sn 是一种时间反转对称断裂(TRS)磁性韦尔半金属,在卡戈米晶格网络中显示出拓扑特性。尽管 Mn$_{2.8}$Sn 是一种反铁磁体,但本研究揭示了 Mn$_{2.8}$Sn (6% Mn 赤字 Mn$_3$Sn)在室温下在 $xy$ 平面上的巨大拓扑霍尔效应。我们认为,磁晶各向异性诱导的非共面自旋结构是这些系统中观察到的拓扑霍尔效应的原因。此外,这些系统的拓扑特性是高度各向异性的,因为我们在 $zx$ 面上观察到了很大的反常霍尔效应。我们发现,在锰位点掺入铁元素 Mn$_{3-x}$Fe$_x$Sn($x$=0.2、0.25 和 0.35)可以调整这些体系的拓扑特性。这些发现有望在室温下实现潜在的拓扑电子应用。
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引用次数: 0
Evolution of structural, magnetic and transport properties of 3d-5dbased double perovskites Nd2-xSrxCoIrO6. 基于 3d-5db 的双包晶石 Nd2-xSrxCoIrO6 的结构、磁性和传输特性的演变。
IF 2.3 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-11-20 DOI: 10.1088/1361-648X/ad8d9b
Raktim Datta, Suman Mondal, Suchanda Mondal, Suman Kalyan Pradhan, Subham Majumdar, Subodh Kumar De

The evolution of the structural, magnetic and transport properties of the intermediate compounds Nd2-xSrxCoIrO6withx= 0.2, 0.4, 0.6, 1 and 1.5 have been studied to establish important roles of sizes and oxidation states of cations on various phases. The replacement of Nd3+by Sr2+primarily influences the oxidation states of Co (Co2+→Co3+) and Ir (Ir4+→Ir5+) ions to maintain the charge neutrality in the entire system. The Sr dopants give rise to an increasing Co/Ir antisite disorder (ASD) to accommodate the variation of charge state and ionic radius of Co and Ir. The nature of magnetic interaction induced by Sr changes from being a ferrimagnetic (FIM) to a more dominant antiferromagnetic. The suppression of the second magnetic transition below 30 K in samples forx>0.2 is entirely due to dilution of the Nd-Nd magnetic interaction. The combined effects of ASD and mixed oxidation state of Co and Ir ions generate various types of magnetic exchange pathways and create competitive magnetic interactions to stabilize a particular magnetic ground state. In the middle compound NdSrCoIrO6, a Griffith like phase in the temperature region 65-150 K and exchange bias field of 658 Oe at 2.3 K under a cooling field of 50 kOe has been observed. The compounds show an insulating kind of behaviour, and with hole doping the value of room temperature resistivity drastically decreases. The nature of conduction is found to follow three dimensional Mott's variable range hopping process.

研究了中间化合物 Nd2-xSrxCoIrO6(x= 0.2、0.4、0.6、1 和 1.5)的结构、磁性和传输特性的演变,以确定阳离子的大小和氧化态对各种相的重要作用。用 Sr2+ 替代 Nd3+ 主要影响 Co(Co2+→Co3+)和 Ir(Ir4+→Ir5+)离子的氧化态,以保持整个体系的电荷中性。掺杂锶会导致 Co/Ir 反斜面无序度 (ASD) 增加,以适应 Co 和 Ir 的电荷状态和离子半径的变化。Sr 诱导的磁性相互作用的性质从铁磁性(FIM)转变为更主要的反铁磁性。在 x>0.2 的样品中,30 K 以下第二磁转变的抑制完全是由于 Nd-Nd 磁相互作用的稀释。ASD 和 Co、Ir 离子混合氧化态的共同作用产生了各种类型的磁交换途径,并产生了竞争性的磁相互作用以稳定特定的磁基态。在中间化合物 NdSrCoIrO6 中,在 65-150 K 的温度区域和 658 Oe 的交换偏置磁场(2.3 K,冷却磁场为 50 kOe)下观察到了类似格里菲斯相的现象。这些化合物显示出一种绝缘行为,随着空穴掺杂,室温电阻率值急剧下降。发现传导性质遵循三维莫特变程跳变过程。
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引用次数: 0
Superconducting energy gap structure of CsV3Sb5from magnetic penetration depth measurements. 从磁穿透深度测量看 CsV3Sb5 的超导能隙结构
IF 2.3 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-11-20 DOI: 10.1088/1361-648X/ad8d2b
Morgan J Grant, Yi Liu, Guang-Han Cao, Joseph A Wilcox, Yanfeng Guo, Xiaofeng Xu, Antony Carrington

Experimental determination of the structure of the superconducting order parameter in the kagome lattice compound CsV3Sb5is an essential step towards understanding the nature of the superconducting pairing in this material. Here we report measurements of the temperature dependence of the in-plane magnetic penetration depth,λ(T), in crystals of CsV3Sb5down to∼60mK. We find thatλ(T)is consistent with a fully-gapped state but with significant gap anisotropy. The magnitude of the gap minima are in the range∼0.2-0.3 Tcfor the measured samples, markedly smaller than previous estimates. We discuss different forms of potential anisotropy and how these can be linked to the V and Sb Fermi surface sheets. We highlight a significant discrepancy between the calculated and measured values ofλ(T=0)which we suggest is caused by spatially suppressed superconductivity.

通过实验确定神户晶格化合物 CsV3Sb5 中超导阶次参数的结构,是了解这种材料中超导配对性质的关键一步。在此,我们报告了对 CsV3Sb5 晶体中面内磁穿透深度 λ(T) 的温度依赖性的测量结果,测量值低至 ∼ 60 mK。我们发现,λ(T) 与完全隙态一致,但具有显著的间隙各向异性。在测量样品中得到的间隙最小值分别为 0.16kBTc 和 0.21kBTc,明显小于之前的估计值。我们讨论了电位各向异性的不同形式,以及如何将它们与 V 和 Sb 费米面片联系起来。我们强调了 λ(T=0) 的计算值和测量值之间的显著差异,并认为这是空间抑制超导性造成的。
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引用次数: 0
Valley manipulation by external fields in two-dimensional materials and their hybrid systems. 二维材料及其混合系统中的外场谷操纵。
IF 2.3 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-11-20 DOI: 10.1088/1361-648X/ad8f81
Ya-Ping Shao, Yun-Qin Li, Jun-Ding Zheng, Yi-Fan Tan, Zhao Guan, Ni Zhong, Fang-Yu Yue, Wen-Yi Tong, Chun-Gang Duan

Investigating two-dimensional (2D) valleytronic materials opens a new chapter in physics and facilitates the emergence of pioneering technologies. Nevertheless, this nascent field faces substantial challenges, primarily attributed to the inherent issue of valley energy degeneracy and the manipulation of valley properties. To break these constraints, the application of external fields has become pivotal for both generating and manipulating the valley properties of 2D systems. This paper takes a close look at the latest progress in modulating the valley properties of 2D valleytronic materials using external fields, covering a wide array of configurations from monolayers and bilayers to intricate heterostructures. We hope that this overview will inspire more exciting discoveries and significantly propel the evolution of valleytronics within the realm of 2D material research.

研究二维(2D)溪谷电子材料为物理学揭开了激动人心的新篇章,并促进了开创性技术的出现。然而,这一新兴领域面临着巨大的挑战,主要原因是谷能退化的固有问题和铁谷材料的稀缺。为了打破这些限制,外部刺激的应用已成为激发和微调这些二维系统固有谷特性的关键。本文深入探讨了利用外部场调制二维溪谷电子材料溪谷特性的最新进展,包括从单层和双层到复杂异质结构的各种配置。我们希望这篇综述能激发更多激动人心的发现,并极大地推动谷电技术在二维材料研究领域的发展。
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引用次数: 0
Emerging new phases in correlated Mott insulator Ca2RuO4. 相关莫特绝缘体 Ca2RuO4 中新出现的新相。
IF 2.3 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-11-19 DOI: 10.1088/1361-648X/ad906d
Giuseppe Cuono, Filomena Forte, Alfonso Romano, Canio Noce

The Mott insulator Ca2RuO4is a paradigmatic example among transition metal oxides, where the interplay of charge, spin, orbital, and lattice degrees of freedom leads to competing quantum phases. In this paper, we focus on and review some key aspects, from the underlying physical framework and its basic properties, to recent theoretical efforts that aim to trigger unconventional quantum ground states, using several external parameters and stimuli. Using first-principle calculations, we demonstrate that Ca2RuO4shows a spin splitting in the reciprocal space, and identify it as an altermagnetic candidate material. The non relativistic spin-splitting has an orbital selective nature, dictated by the local crystallographic symmetry. Next, we consider two routes that may trigger exotic quantum states. The first one corresponds to transition metal substitution of the 4d4Ru with isovalent 3d3ions. This substitutional doping may alter the spin-orbital correlations favoring the emergence of negative thermal expansion. The second route explores fledgling states arising in a non-equilibrium steady state under the influence of an applied electric field. We show that the electric field can directly affect the orbital density, eventually leading to strong orbital fluctuations and the suppression of orbital imbalance, which may, in turn, reduce antiferromagnetism. These aspects suggest possible practical applications, as its unique properties may open up possibilities for augmenting existing technologies, surpassing the limitations of conventional materials.

莫特绝缘体 Ca2RuO4 是过渡金属氧化物中的一个典型例子,其中电荷、自旋、轨道和晶格自由度的相互作用导致了相互竞争的量子相。在本文中,我们将重点讨论并回顾一些关键方面,从基本物理框架及其基本特性,到最近旨在利用几个外部参数和刺激触发非常规量子基态的理论研究工作。通过第一原理计算,我们证明 Ca2RuO4 在倒数空间显示出自旋分裂,并将其确定为一种变磁候选材料。这种非相对论自旋分裂具有轨道选择性,由局部晶体学对称性决定。接下来,我们考虑了两种可能引发奇异量子态的途径。第一种是用异价 3d3 离子取代 4d4Ru 的过渡金属。这种置换掺杂可能会改变自旋轨道相关性,从而有利于负热膨胀的出现。第二条路线是探索在外加电场影响下的非平衡稳态中出现的萌芽状态。我们的研究表明,电场可以直接影响轨道密度,最终导致强烈的轨道波动和轨道不平衡的抑制,这反过来又可能降低反铁磁性。这些方面表明,这种材料可能具有实际应用价值,因为它的独特性质可能为增强现有技术、超越传统材料的局限性提供了可能性。
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引用次数: 0
Pressure induced semiconductor-like to metal transition and linear magnetoresistance in Cr2S2.88single crystal. Cr2S2.88 单晶中由压力诱导的类半导体到金属的转变和线性磁阻。
IF 2.3 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-11-19 DOI: 10.1088/1361-648X/ad906f
Xiaodong Sun, Xuebo Zhou, Hao Sun, Feng Wu, Yuanzhe Li, Wanli He, Pengda Ye, Xiang Li, Jianlin Luo, Meiling Jin, Wei Wu

The transition metal chalcogenide Cr2S3-xhas unique properties, such as a lower antiferromagnetic transition temperature, semiconducting behavior, and thermoelectric properties. We focus on the effects of high pressure on the properties of electrical transport and structure in the single crystal Cr2S2.88. It is observed that the resistance drops abruptly by approximately two orders of magnitude and the temperature derivative of the resistance changes from negative to positive after 15.7 GPa. The Cr2S2.88crystal has undergone transitions from a semiconductor-like phase to a metal I phase and then to another metal II phase. Simultaneously, a structural phase transition after 16.1 GPa is confirmed by synchrotron angle dispersive x-ray diffraction. After the structural phase transition, the negative magnetoresistance becomes positive with increasing pressure and shows a linear relationship in the metal II phase. Electron-type carriers dominate in the semiconductor-like phase, but hole-type carriers dominate after the structural phase transition. Our work provides an example of the effective modulation of semiconductor-like properties by pressure, which is meaningful for the innovation and development of semiconductor technology.

过渡金属 Chalcogenide Cr2S3-x 具有独特的性质,如较低的反铁磁转变温度、半导体行为和热电性质。我们重点研究了高压对单晶 Cr2S2.88 中电传输特性和结构的影响。我们观察到,在 15.7 GPa 之后,电阻会突然下降约两个数量级,电阻的温度导数也会从负值变为正值。Cr2S2.88 晶体经历了从类半导体相到金属 I 相,再到另一种金属 II 相的转变。同时,同步辐射角色散 X 射线衍射(AD-XRD)证实了 16.1 GPa 后的结构相变。结构相变后,随着压力的增加,负磁阻变为正磁阻,并在金属 II 相中呈现线性关系。在类半导体相中,电子型载流子占主导地位,但在结构相转变后,空穴型载流子占主导地位。我们的工作提供了一个通过压力有效调节类半导体特性的实例,这对半导体技术的创新和发展具有重要意义。
{"title":"Pressure induced semiconductor-like to metal transition and linear magnetoresistance in Cr<sub>2</sub>S<sub>2.88</sub>single crystal.","authors":"Xiaodong Sun, Xuebo Zhou, Hao Sun, Feng Wu, Yuanzhe Li, Wanli He, Pengda Ye, Xiang Li, Jianlin Luo, Meiling Jin, Wei Wu","doi":"10.1088/1361-648X/ad906f","DOIUrl":"10.1088/1361-648X/ad906f","url":null,"abstract":"<p><p>The transition metal chalcogenide Cr<sub>2</sub>S<sub>3-<i>x</i></sub>has unique properties, such as a lower antiferromagnetic transition temperature, semiconducting behavior, and thermoelectric properties. We focus on the effects of high pressure on the properties of electrical transport and structure in the single crystal Cr<sub>2</sub>S<sub>2.88</sub>. It is observed that the resistance drops abruptly by approximately two orders of magnitude and the temperature derivative of the resistance changes from negative to positive after 15.7 GPa. The Cr<sub>2</sub>S<sub>2.88</sub>crystal has undergone transitions from a semiconductor-like phase to a metal I phase and then to another metal II phase. Simultaneously, a structural phase transition after 16.1 GPa is confirmed by synchrotron angle dispersive x-ray diffraction. After the structural phase transition, the negative magnetoresistance becomes positive with increasing pressure and shows a linear relationship in the metal II phase. Electron-type carriers dominate in the semiconductor-like phase, but hole-type carriers dominate after the structural phase transition. Our work provides an example of the effective modulation of semiconductor-like properties by pressure, which is meaningful for the innovation and development of semiconductor technology.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142603710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of quantum information encoding and metallic leads on dynamical multipartite correlation formation in semiconductor quantum dot arrays. 量子信息编码和金属引线对半导体量子点阵列中动态多方相关性形成的影响。
IF 2.3 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-11-19 DOI: 10.1088/1361-648X/ad906e
Nikolaos Petropoulos, Elena Blokhina

This study investigates quantum information scrambling (QIS) in a semiconductor quantum dot array. Starting with the 1D Transverse Field Ising model, we expand to more relevant quasi-2D frameworks such as the Heisenberg chain, super-extended Fermi-Hubbard (FH) and hardcore FH models. Assessing their relevance to semiconductor spin-qubit quantum computers, simulations of multipartite correlation formation examine qubit encoding strategies' fidelity, stability, and robustness, revealing trade-offs among these aspects. Furthermore, we investigate the weakly coupled metallic injector/detector (I/D) leads' significant impact on QIS behavior by employing multi-leadN-single orbital impurities weakly coupled Anderson models and studying the unitary evolution of the system. We observe sign flips in spatiotemporal tripartite mutual information which result in significant effects on dynamical correlation structures and their formation. Exploring carrier number effects, we identify optimal regions for QIS enhancement. Our findings emphasize the necessity of proper qubit encoding and I/D leads' influence on quantum information dynamics.

本研究探讨了半导体量子点阵列中的量子信息扰乱(QIS)问题。从一维横向场伊辛模型开始,我们扩展到更相关的准二维框架,如海森堡链、超扩展费米-哈伯德和硬核费米-哈伯德模型。为了评估这些模型与半导体自旋量子比特计算机的相关性,我们模拟了多方纠缠的形成,考察了量子比特编码策略的保真度、稳定性和鲁棒性,揭示了这些方面的权衡。此外,我们采用Ω引线 N-单轨道杂质弱耦合安德森模型,研究了弱耦合金属注入器/检测器(I/D)引线对 QIS 行为的重大影响。我们观察到时空三方互信息 I3 的符号翻转,这对动态量子纠缠结构及其形成产生了重大影响。通过探索载流子数量效应,我们确定了增强量子纠缠信息的最佳区域。我们的研究结果强调了正确的量子位编码的必要性,以及在噪声和杂质中 I/D 导向对量子器件的影响。
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引用次数: 0
Monolayer M2X2O as potential 2D altermagnets and half-metals: a first principles study. 作为潜在二维变磁体和半金属的单层 M2X2O:第一原理研究。
IF 2.3 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-11-19 DOI: 10.1088/1361-648X/ad8e9f
Kaixin Zou, Yuxin Yang, Baojuan Xin, Wentao Wu, Yahui Cheng, Hong Dong, Hui Liu, Feng Luo, Feng Lu, Wei-Hua Wang

Realizing novel two-dimensional (2D) magnetic states would accelerate the development of advanced spintronic devices and the understandings of 2D magnetic physics. In this paper, we have examined the magnetic and electronic properties of 20 dynamically stable and exfoliable M2X2O (M = Ti-Ni; X = S-Te; excluding Co2Te2O). It has been unveiled that [X4O2]-D2hand [M4]-D4hcrystal fields govern the M-3dorbital splittings in M2X2O. The splittings further lead to the antiferromagnetic (AFM) orderings in Ti2S2O/Fe2S2O/Fe2Se2O/M2X2O (M = V, Cr, Mn and Ni; X = S-Se) as well as the ferromagnetic orderings in Ti2Se2O/Ti2Te2O/Fe2Te2O/Co2S2O/Co2Se2O through kinetic and superexchange mechanisms. Notably, all the AFM M2X2O are 2D altermagnets, and Ti2Se2O/Ti2Te2O/Co2S2O/Co2Se2O are 2D half-metals. In particular, the anisotropicd-d/phoppings lead to the tunable altermagnetic splitting in Ti2S2O/Cr2Te2O, while the parity of V-3dyzorbital contributes to the symmetry-protected altermagnetic splitting within V2X2O. These altermagnetic and half-metallic monolayer M2X2O provide promising candidates applied in low-dimensional spintronic devices. In addition, the potential 2D altermagnetic Weyl semimetal of Fe2S2O/Fe2Se2O, nodal-loop half-metal of Ti2Se2O and half-semi metal of Ti2Te2O facilitate to uncover novel low-dimensional topological physics. These theoretical results would expand the platform in particular for 2D altermagnets and nontrivial systems.

实现新颖的二维(2D)磁态将加速先进自旋电子器件的发展和对二维磁性物理学的理解。本文研究了 20 种动态稳定的可剥离 M2X2O(M = Ti ~ Ni;X = S ~ Te;不包括 Co2Te2O)的磁性和电子特性。研究发现,[X4O2]-D2 和[M4]-D4h 晶体场控制着 M2X2O 中的 M-3dorbital 分裂。分裂进一步导致 Ti2S2O/Fe2S2O/Fe2Se2O/M2X2O (M = V、Cr、Mn 和 Ni;X = S ~ Se)中的反铁磁有序化,并通过动力学和超交换机制导致 Ti2Se2O/Ti2Te2O/Fe2Te2O/Co2S2O/Co2Se2O 中的铁磁有序化。值得注意的是,所有反铁磁性的 M2X2O 都是二维反磁体,而 Ti2Se2O/Ti2Te2O/Co2S2O/Co2Se2O 则是二维半金属。其中,各向异性的d-d/phoppings导致了Ti2S2O/Cr2Te2O中可调的变磁分裂,而V-3dyzorbital的奇偶性则导致了V2X2O中对称保护的变磁分裂。这些变磁和半金属单层 M2X2O 为低维自旋电子器件的应用提供了很好的候选材料。此外,Fe2S2O/Fe2Se2O 潜在的二维改磁韦尔半金属、Ti2Se2O 的结环半金属和 Ti2Te2O 的半半金属也有助于发现新的低维拓扑物理。这些理论研究成果将拓展研究平台,特别是二维变磁体和非三维系统的研究平台。
{"title":"Monolayer M<sub>2</sub>X<sub>2</sub>O as potential 2D altermagnets and half-metals: a first principles study.","authors":"Kaixin Zou, Yuxin Yang, Baojuan Xin, Wentao Wu, Yahui Cheng, Hong Dong, Hui Liu, Feng Luo, Feng Lu, Wei-Hua Wang","doi":"10.1088/1361-648X/ad8e9f","DOIUrl":"10.1088/1361-648X/ad8e9f","url":null,"abstract":"<p><p>Realizing novel two-dimensional (2D) magnetic states would accelerate the development of advanced spintronic devices and the understandings of 2D magnetic physics. In this paper, we have examined the magnetic and electronic properties of 20 dynamically stable and exfoliable M<sub>2</sub>X<sub>2</sub>O (M = Ti-Ni; X = S-Te; excluding Co<sub>2</sub>Te<sub>2</sub>O). It has been unveiled that [X<sub>4</sub>O<sub>2</sub>]-<i>D</i><sub>2<i>h</i></sub>and [M<sub>4</sub>]-<i>D</i><sub>4<i>h</i></sub>crystal fields govern the M-3<i>d</i>orbital splittings in M<sub>2</sub>X<sub>2</sub>O. The splittings further lead to the antiferromagnetic (AFM) orderings in Ti<sub>2</sub>S<sub>2</sub>O/Fe<sub>2</sub>S<sub>2</sub>O/Fe<sub>2</sub>Se<sub>2</sub>O/M<sub>2</sub>X<sub>2</sub>O (M = V, Cr, Mn and Ni; X = S-Se) as well as the ferromagnetic orderings in Ti<sub>2</sub>Se<sub>2</sub>O/Ti<sub>2</sub>Te<sub>2</sub>O/Fe<sub>2</sub>Te<sub>2</sub>O/Co<sub>2</sub>S<sub>2</sub>O/Co<sub>2</sub>Se<sub>2</sub>O through kinetic and superexchange mechanisms. Notably, all the AFM M<sub>2</sub>X<sub>2</sub>O are 2D altermagnets, and Ti<sub>2</sub>Se<sub>2</sub>O/Ti<sub>2</sub>Te<sub>2</sub>O/Co<sub>2</sub>S<sub>2</sub>O/Co<sub>2</sub>Se<sub>2</sub>O are 2D half-metals. In particular, the anisotropic<i>d-d/p</i>hoppings lead to the tunable altermagnetic splitting in Ti<sub>2</sub>S<sub>2</sub>O/Cr<sub>2</sub>Te<sub>2</sub>O, while the parity of V-3<i>d<sub>yz</sub></i>orbital contributes to the symmetry-protected altermagnetic splitting within V<sub>2</sub>X<sub>2</sub>O. These altermagnetic and half-metallic monolayer M<sub>2</sub>X<sub>2</sub>O provide promising candidates applied in low-dimensional spintronic devices. In addition, the potential 2D altermagnetic Weyl semimetal of Fe<sub>2</sub>S<sub>2</sub>O/Fe<sub>2</sub>Se<sub>2</sub>O, nodal-loop half-metal of Ti<sub>2</sub>Se<sub>2</sub>O and half-semi metal of Ti<sub>2</sub>Te<sub>2</sub>O facilitate to uncover novel low-dimensional topological physics. These theoretical results would expand the platform in particular for 2D altermagnets and nontrivial systems.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142576304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Chirality reversal quantum phase transition in flat-band topological insulators. 平带拓扑绝缘体中的手性反转量子相变。
IF 4.6 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-11-18 DOI: 10.1088/1361-648X/ad8f83
V I Litvinov

Quantum anomalous Hall effect generates dissipationless chiral conductive edge states in materials with large spin-orbit coupling and strong, intrinsic, or proximity magnetisation. The topological indexes of the energy bands are robust to smooth variations in the relevant parameters. Topological quantum phase transitions between states with different Chern numbers require the closing of the bulk bandgap:|C|=1→C=1/2corresponds to the transition from a topological insulator to a gapless state ink=0- quantum anomalous semimetal. Within the Bernevig-Hughes-Zhang (BHZ) model of 2D topological quantum well, this study identifies another type of topological phase transition induced by a magnetic field. The transitionC=±1→C=∓1occurs when the monotonic Zeeman field reaches the threshold value and thus triggers the reversal of edge modes chirality. The calculated threshold depends on the width of the conduction and valence bands and is more experimentally achievable the flatter the bands. The effect of the topological phase transition|ΔC|=2can be observed experimentally as a jump in magnetoresistance.

量子反常霍尔效应能在具有大自旋轨道耦合和强、本征或邻近磁化的材料中产生无耗散手性导电边缘态。能带的拓扑指数对相关参数的平滑变化很稳定。不同切尔数状态之间的拓扑量子相变需要关闭体带隙:C=1→C=1/2 相当于从拓扑绝缘体过渡到 k=0 态量子反常半金属的无间隙状态。在二维拓扑量子阱的 Bernevig-Hughes-Zhang 模型中,本研究发现了磁场诱导的另一种拓扑相变。当单调齐曼场达到阈值时,会发生 C=±1→C=∓1 的转变,从而引发边缘模式手性的逆转。计算出的阈值取决于导带和价带的宽度,而且越平坦的导带在实验中越容易实现。拓扑相变 ∆C=2 的影响可以通过实验观察到,即磁阻的跃迁。
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引用次数: 0
Low-energy magnetic states of Tb adatom on graphene. 石墨烯上铽原子的低能磁态。
IF 4.6 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-11-18 DOI: 10.1088/1361-648X/ad8fe9
Monirul Shaikh, Alison Klein, Aleksander L Wysocki

Electronic structure and magnetic interactions of a Tb adatom on graphene are investigated from first principles using combination of density functional theory and multiconfigurational quantum chemistry techniques including spin-orbit coupling (SOC) . We determine that the six-fold symmetry hollow site is the preferred adsorption site and investigate electronic spectrum for different adatom oxidation states including Tb3+, Tb2+, Tb1+, and Tb0. For all charge states, the Tb4f8configuration is retained with other adatom valence electrons being distributed over5dxy,5dx2+y2, and6s/5d0single-electron orbitals. We find strong intra-site adatom exchange coupling that ensures that the5d6sspins are parallel to the4fspin. For Tb3+, the energy levels can be described by theJ = 6 multiplet split by the graphene crystal field (CF). For other oxidation states, the interaction of4felectrons with spin and orbital degrees of freedom of6s5delectrons in the presence of SOC results in the low-energy spectrum composed closely lying effective multiplets that are split by the graphene CF. Stable magnetic moment is predicted for Tb3+and Tb2+adatoms due to uniaxial magnetic anisotropy and effective anisotropy barrier around 440 cm-1controlled by the temperature assisted quantum tunneling of magnetization through the third excited doublet. On the other hand, in-plane magnetic anisotropy is found for Tb1+and Tb0adatoms. Our results indicate that the occupation of the6s5dorbitals can dramatically affect the magnetic anisotropy and magnetic moment stability of rare earth adatoms.

我们结合密度泛函理论和多构型量子化学技术(包括自旋轨道耦合),从第一原理出发,研究了石墨烯上铽原子的电子结构和磁相互作用。我们确定六重对称空心位点是首选吸附位点,并研究了不同金刚原子氧化态(包括 Tb3+、Tb2+、Tb1+ 和 Tb0)的电子能谱。在所有电荷态中,镱的 4f8 配置都得到了保留,其他腺原子价电子分布在 5dxy、5dx2+y2 和 6s/5d0s 单电子轨道上。我们发现了强烈的位内原子交换耦合,确保了 5d6sspins 与 4fspins 平行。对于 Tb3+,能级可以用石墨烯晶场分裂的 J= 6 多重子来描述。对于其他氧化态,在存在自旋轨道耦合的情况下,4fe 电子与 6s5delectrons 的自旋和轨道自由度的相互作用导致低能谱由被石墨烯晶场分割的紧密平铺的有效多子构成。Tb3+ 和 Tb2+ 原子的稳定磁矩是由单轴磁各向异性和 440 cm-1 左右的有效各向异性势垒控制的,这是由温度辅助的磁化量子隧穿第三激发双态所控制的。另一方面,我们发现 Tb1+ 和 Tb0 原子具有面内磁各向异性。我们的研究结果表明,6s5d 轨道的占据会极大地影响稀土原子的磁各向异性和磁矩稳定性。
{"title":"Low-energy magnetic states of Tb adatom on graphene.","authors":"Monirul Shaikh, Alison Klein, Aleksander L Wysocki","doi":"10.1088/1361-648X/ad8fe9","DOIUrl":"10.1088/1361-648X/ad8fe9","url":null,"abstract":"<p><p>Electronic structure and magnetic interactions of a Tb adatom on graphene are investigated from first principles using combination of density functional theory and multiconfigurational quantum chemistry techniques including spin-orbit coupling (SOC) . We determine that the six-fold symmetry hollow site is the preferred adsorption site and investigate electronic spectrum for different adatom oxidation states including Tb<sup>3+</sup>, Tb<sup>2+</sup>, Tb<sup>1+</sup>, and Tb<sup>0</sup>. For all charge states, the Tb4f8configuration is retained with other adatom valence electrons being distributed over5dxy,5dx2+y2, and6s/5d0single-electron orbitals. We find strong intra-site adatom exchange coupling that ensures that the5d6sspins are parallel to the<b>4<i>f</i></b>spin. For Tb<sup>3+</sup>, the energy levels can be described by the<i>J</i> = 6 multiplet split by the graphene crystal field (CF). For other oxidation states, the interaction of<b>4<i>f</i></b>electrons with spin and orbital degrees of freedom of6s5delectrons in the presence of SOC results in the low-energy spectrum composed closely lying effective multiplets that are split by the graphene CF. Stable magnetic moment is predicted for Tb<sup>3+</sup>and Tb<sup>2+</sup>adatoms due to uniaxial magnetic anisotropy and effective anisotropy barrier around 440 cm<sup>-1</sup>controlled by the temperature assisted quantum tunneling of magnetization through the third excited doublet. On the other hand, in-plane magnetic anisotropy is found for Tb<sup>1+</sup>and Tb<sup>0</sup>adatoms. Our results indicate that the occupation of the6s5dorbitals can dramatically affect the magnetic anisotropy and magnetic moment stability of rare earth adatoms.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":4.6,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142603672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
Journal of Physics: Condensed Matter
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