4H silicon carbide bulk acoustic wave gyroscope with ultra-high Q-factor for on-chip inertial navigation

Abstract

Inertial navigation on a chip has long been constrained by the noise and stability issues of micromechanical Coriolis gyroscopes, as silicon, the dominant material for microelectromechanical system devices, has reached the physical limits of its material properties. To address these challenges, this study explores silicon carbide, specifically its monocrystalline 4H polytype, as a substrate to improve gyroscope performance due to its low phonon Akhiezer dissipation and its isotropic hexagonal crystal lattice. We report on low-noise electrostatic acoustic resonant gyroscopes with mechanical quality factors exceeding several millions, fabricated on bonded 4H silicon carbide-on-insulator wafers. These gyroscopes operate using megahertz frequency bulk acoustic wave modes for large open-loop bandwidth and are tuned electrostatically using capacitive transducers created by wafer-level deep reactive ion etching. Experimental results show these gyroscopes achieve superior performance under various conditions and demonstrate higher quality factors at increased temperatures, enabling enhanced performance in an ovenized or high-temperature stabilized configuration. Zhenming Liu and colleagues show a SiC microelectromechanical system with both high quality factor and high frequency. They demonstrate the advantage of the device over the traditional Si gyroscopes and batch-fabrication possibility.