The electrochemical performance of gallium nitride composited with g-C3N4 in bulk and oxidized forms for supercapacitors

IF 4 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Synthetic Metals Pub Date : 2024-06-24 DOI:10.1016/j.synthmet.2024.117686
Zahra Salehi Rozveh , Morteza Moradi , Mehran Keyhan , Vahid Safarifard , Peyman Yaghoubizadeh , Mohamad Javad Eshraghi
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Abstract

Six composites were synthesized using g-C3N4 in two forms, namely Bulk and Oxidized, mixed with gallium nitride, and composites of materials were employed as electrode components for supercapacitors. The composites' physical and structural characteristics were analyzed and the electrochemical performance of composite materials containing varying ratios of GaN and g-C3N4 was analyzed. Galvanostatic charge-discharge investigations revealed that the Oxidized g-C3N4/GaN-1:2 composite exhibited a superior maximum specific capacitance compared to other electrode materials, achieving 200 F g−1 at a current density of 2 A g−1, which suggest that mixing GaN with different forms of g-C3N4 (Bulk and Oxidized) have the potential to produce favorable electrode materials suitable for application in electrochemical supercapacitors. The device demonstrated a remarkable high energy density of 1.5 µWh cm-² at a power density of 327.9 mW cm-², along with exceptional long-term durability.

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用于超级电容器的氮化镓与 g-C3N4 的块状和氧化态复合材料的电化学性能
利用 g-C3N4 与氮化镓的两种混合形式(块状和氧化型)合成了六种复合材料,并将复合材料用作超级电容器的电极元件。分析了复合材料的物理和结构特性,并分析了含有不同比例氮化镓和 g-C3N4 的复合材料的电化学性能。电静态充放电研究表明,氧化 g-C3N4/GaN-1:2 复合材料的最大比电容优于其他电极材料,在电流密度为 2 A g-1 时达到 200 F g-1。该装置在功率密度为 327.9 mW cm-² 的情况下,能量密度高达 1.5 µWh cm-²,而且长期耐用性极佳。
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来源期刊
Synthetic Metals
Synthetic Metals 工程技术-材料科学:综合
CiteScore
8.30
自引率
4.50%
发文量
189
审稿时长
33 days
期刊介绍: This journal is an international medium for the rapid publication of original research papers, short communications and subject reviews dealing with research on and applications of electronic polymers and electronic molecular materials including novel carbon architectures. These functional materials have the properties of metals, semiconductors or magnets and are distinguishable from elemental and alloy/binary metals, semiconductors and magnets.
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