A computational investigation on the adsorption behavior of bromoacetone on B36 borophene nanosheets

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2024-06-26 DOI:10.1007/s10825-024-02192-3
Meriem Taier, Hamza Allal, Salim Bousba, Fathi Bouhadiouche, Soumeya Maza, Maamar Damous, Ahlem Boussadia
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Abstract

Density functional theory (DFT) methods are employed to investigate the capability of B36 borophene nanosheets as sensors for detecting the bromoacetone (BCT) molecule. An evaluation of the structural and electronic properties of both BCT and B36 borophene is conducted. Subsequently, through computed metrics such as adsorption energy, charge density difference, and density of states, the interaction between B36 and the BCT molecule is examined via dispersion-corrected density functional theory (DFT). Employing the reduced density gradient approach for the analysis of non-covalent interactions, we further explored the nature of these interactions. The obtained results illustrate that B36 borophene nanosheets serve as effective sensors for the BCT molecule, showcasing their ability to adsorb up to five BCT molecules through an exothermic process. BCT molecules chemiadsorb onto B36 borophene by forming B‒O covalent bonds, engaging the oxygen atom of the carbonyl group in BCT with the edge boron atoms of B36 borophene. Additionally, BCT molecules physio-adsorb on both the concave and convex sides of B36 borophene, facilitated by van der Waals interactions. Ab-initio molecular dynamic simulations confirm the thermal stability of the BCT@B36 concave and convex complexes at both 300 K and 400 K.

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B36 硼吩納米薄片上溴丙酮吸附行為的計算研究
本文采用密度泛函理论(DFT)方法研究了 B36 硼吩纳米片作为传感器检测溴丙酮(BCT)分子的能力。研究评估了 BCT 和 B36 硼吩的结构和电子特性。随后,通过计算吸附能、电荷密度差和状态密度等指标,利用色散校正密度泛函理论(DFT)研究了 B36 与 BCT 分子之间的相互作用。我们采用还原密度梯度法分析了非共价相互作用,进一步探讨了这些相互作用的性质。研究结果表明,B36 硼吩纳米片可作为 BCT 分子的有效传感器,通过放热过程吸附多达五个 BCT 分子。BCT 分子通过形成 B-O 共价键,使 BCT 中羰基的氧原子与 B36 硼吩中的边缘硼原子结合,从而化学吸附到 B36 硼吩上。此外,BCT 分子通过范德华相互作用吸附在 B36 硼吩的凹面和凸面上。Ab-initio 分子动力学模拟证实了 BCT@B36 凹面和凸面复合物在 300 K 和 400 K 下的热稳定性。
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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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