Thickness effect on superconducting properties of niobium films for radio-frequency cavity applications

Antonio Bianchi, Marco Bonura, Carlota P A Carlos, Stewart Leith, Guillaume Rosaz, Carmine Senatore and Walter Venturini Delsolaro
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Abstract

Niobium-coated copper radio-frequency cavities are cost-effective alternatives to bulk niobium cavities, given the lower material costs of copper substrates and their operation in liquid helium at around 4.2 K. However, these cavities historically exhibited a gradual degradation in performance with the accelerating field. This phenomenon, not yet fully understood, limits the application of niobium thin film cavities in accelerators where the real-estate gradient needs to be maximized. Recent studies on niobium films deposited on copper using high power impulse magnetron sputtering (HiPIMS) technique show promising results in mitigating the performance degradation of niobium thin film radio-frequency cavities. This paper examines the effect of film thickness on the superconducting properties of niobium films deposited on copper using HiPIMS. The study provides insights into how the critical temperature, transition width, lower and upper critical fields, and critical current density vary with the film thickness. Increasing the thickness of niobium films deposited through HiPIMS is found to enhance superconducting properties and reduce densities of defects and structural irregularities in the crystalline lattice. This shows potential for enhancing overall performance and potentially mitigating the observed performance degradation in niobium thin film radio-frequency cavities. Additionally, the Ivry’s scaling relation among critical temperature, thickness, and sheet resistance at the normal state appears applicable to niobium films up to approximately 4 µm. This extends the previously confirmed validity for niobium films, which was limited to around 300 nm thickness.
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厚度对射频腔应用中铌薄膜超导特性的影响
由于铜基板的材料成本较低,而且可以在 4.2 K 左右的液氦中运行,因此铌涂层铜射频空腔是块状铌空腔的经济有效的替代品。这种现象尚未被完全理解,它限制了铌薄膜腔在加速器中的应用,因为加速器需要最大限度地提高实际磁场梯度。最近利用高功率脉冲磁控溅射(HiPIMS)技术对沉积在铜上的铌薄膜进行的研究表明,在缓解铌薄膜射频空腔性能退化方面取得了可喜的成果。本文探讨了薄膜厚度对使用 HiPIMS 技术沉积在铜上的铌薄膜超导性能的影响。研究深入探讨了临界温度、转变宽度、上下临界磁场和临界电流密度如何随薄膜厚度而变化。研究发现,增加通过 HiPIMS 沉积的铌薄膜厚度可增强超导特性,降低晶格中的缺陷密度和结构不规则性。这显示了提高整体性能的潜力,并有可能减轻铌薄膜射频空腔中观察到的性能下降。此外,正常状态下临界温度、厚度和薄片电阻之间的伊夫里比例关系似乎适用于最大约 4 µm 的铌薄膜。这扩展了之前确认的铌薄膜的有效性,之前的有效性仅限于约 300 nm 厚度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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