{"title":"Volatile memory characteristics of CMOS-compatible HZO ferroelectric layer for reservoir computing","authors":"Seungjun Lee, Doohyung Kim, Sungjun Kim","doi":"10.1016/j.ceramint.2024.07.035","DOIUrl":null,"url":null,"abstract":"<p>Recently, ferroelectric memory utilizing hafnium oxide has emerged as an attractive option compared to existing memory technologies, primarily due to its scalability and energy-efficient advantages. Among them, hafnium zirconium oxide (HZO) is examined for its short-term memory characteristics to achieve a reservoir computing system known to exhibit remarkable polarization properties, being able to switch between distinct polarization states under the influence of an electric field. These unique properties are of utmost importance in ferroelectric memory applications, where they play a pivotal role in the storage and retrieval of binary data. In this study, we identify and experiment with the electrical characteristics of a ferroelectric tunnel junction (FTJ) device with a metal-ferroelectric-semiconductor (MFS) structure using TiN as the top electrode and HZO as the ferroelectric layer. Moreover, we assess the performance of the device by evaluating its maximum 2<em>P</em><sub><em>r</em></sub> (remnant polarization) and tunneling electro resistance (TER) values in different conditions of cell area. Furthermore, we analyze and show short-term memory (STM) characteristics and synaptic properties with 5 cycles of potentiation and depression under conditions of stable dynamic range by coordinating identical and incremental pulses. In the case of incremental pulses (> 95%), the MNIST pattern recognition accuracy is higher than in the case of identical pulses (> 94%). Through a sequence of procedures, the synaptic characteristics of FTJs are confirmed to assess their suitability for use as an artificial synaptic device.</p>","PeriodicalId":267,"journal":{"name":"Ceramics International","volume":null,"pages":null},"PeriodicalIF":5.1000,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ceramics International","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1016/j.ceramint.2024.07.035","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, CERAMICS","Score":null,"Total":0}
引用次数: 0
Abstract
Recently, ferroelectric memory utilizing hafnium oxide has emerged as an attractive option compared to existing memory technologies, primarily due to its scalability and energy-efficient advantages. Among them, hafnium zirconium oxide (HZO) is examined for its short-term memory characteristics to achieve a reservoir computing system known to exhibit remarkable polarization properties, being able to switch between distinct polarization states under the influence of an electric field. These unique properties are of utmost importance in ferroelectric memory applications, where they play a pivotal role in the storage and retrieval of binary data. In this study, we identify and experiment with the electrical characteristics of a ferroelectric tunnel junction (FTJ) device with a metal-ferroelectric-semiconductor (MFS) structure using TiN as the top electrode and HZO as the ferroelectric layer. Moreover, we assess the performance of the device by evaluating its maximum 2Pr (remnant polarization) and tunneling electro resistance (TER) values in different conditions of cell area. Furthermore, we analyze and show short-term memory (STM) characteristics and synaptic properties with 5 cycles of potentiation and depression under conditions of stable dynamic range by coordinating identical and incremental pulses. In the case of incremental pulses (> 95%), the MNIST pattern recognition accuracy is higher than in the case of identical pulses (> 94%). Through a sequence of procedures, the synaptic characteristics of FTJs are confirmed to assess their suitability for use as an artificial synaptic device.
期刊介绍:
Ceramics International covers the science of advanced ceramic materials. The journal encourages contributions that demonstrate how an understanding of the basic chemical and physical phenomena may direct materials design and stimulate ideas for new or improved processing techniques, in order to obtain materials with desired structural features and properties.
Ceramics International covers oxide and non-oxide ceramics, functional glasses, glass ceramics, amorphous inorganic non-metallic materials (and their combinations with metal and organic materials), in the form of particulates, dense or porous bodies, thin/thick films and laminated, graded and composite structures. Process related topics such as ceramic-ceramic joints or joining ceramics with dissimilar materials, as well as surface finishing and conditioning are also covered. Besides traditional processing techniques, manufacturing routes of interest include innovative procedures benefiting from externally applied stresses, electromagnetic fields and energetic beams, as well as top-down and self-assembly nanotechnology approaches. In addition, the journal welcomes submissions on bio-inspired and bio-enabled materials designs, experimentally validated multi scale modelling and simulation for materials design, and the use of the most advanced chemical and physical characterization techniques of structure, properties and behaviour.
Technologically relevant low-dimensional systems are a particular focus of Ceramics International. These include 0, 1 and 2-D nanomaterials (also covering CNTs, graphene and related materials, and diamond-like carbons), their nanocomposites, as well as nano-hybrids and hierarchical multifunctional nanostructures that might integrate molecular, biological and electronic components.