Recessed Trench Gate AlGaN/GaN HEMT for pH Monitoring: Design and Sensitivity Evaluation

IF 2.1 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Nanotechnology Pub Date : 2024-07-02 DOI:10.1109/tnano.2024.3422181
Ritu Poonia, Lava Bhargava, Aasif Mohammad Bhat, C. Periasamy
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用于 pH 值监测的凹槽栅 AlGaN/GaN HEMT:设计和灵敏度评估
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来源期刊
IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology 工程技术-材料科学:综合
CiteScore
4.80
自引率
8.30%
发文量
74
审稿时长
8.3 months
期刊介绍: The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.
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Toward a GHz-Frequency BEOL Ferroelectric Negative-Capacitance Oscillator with a Wide Tuning Range Ab Initio Modeling of Doped/Undoped ArGNR Sensors for No2 Detection Recessed Trench Gate AlGaN/GaN HEMT for pH Monitoring: Design and Sensitivity Evaluation Highly Efficient (>36%) Lead-Free Cs2BiAgI6/CIGS Based Double Perovskite Solar Cell (DPSC) With Dual-Graded Light Absorber Layers for Next Generation Photovoltaic (PV) Technologies Signal-Processing Application Based on Ferroelectric Tunnel Field-Effect Transistor
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