The Relevance of the New Exponential Equation of State for Semiconductors

Abstract

The isothermal equation of state has been commonly used to determine the compression-dependent pressure of semiconductors like Ge, FeSi2, SiC, AIN, SnS, MoN, and GaN. Progress in this field has been achieved through the application of Murnaghan, Kholiya, and newly developed equations of state. While the Murnaghan and Kholiya equations yielded comparable results to experimental data at low compression, the Kholiya equation had to reduce results at high compression, while the Murnaghan equation had increasing results. However, the newly developed equation of state displayed a striking similarity to experimental values with only minor deviations, revealing its potential to forecast the thermos-elastic properties of semiconductors at both low and high compressions.