Demonstration of Microwave Resonators and Double Quantum Dots on Optimized Reverse-Graded Ge/SiGe Heterostructures

Abstract

One of the most promising platforms for the realization of spin-based quantum computing are planar germanium quantum wells embedded between silicon–germanium barriers. To achieve comparably thin stacks with little surface roughness, this type of heterostructure can be grown using the so-called reverse linear grading approach, where the growth starts with a virtual germanium substrate followed by a graded silicon–germanium alloy with an increasing silicon content. However, the compatibility of such reverse-graded heterostructures with superconducting microwave resonators has not yet been demonstrated. Here, we report on the successful realization of well-controlled double quantum dots and high-quality coplanar waveguide resonators on the same reverse-graded Ge/SiGe heterostructure.