Simultaneous resistance switching and rectifying effects in a single hybrid perovskite

Abstract

Halide perovskites with naturally coupled electron-ion dynamics hold great potential for nonvolatile memory applications. Self-rectifying memristors are promising as they can avoid sneak currents and simplify device configuration. Here we report a self-rectifying memristor firstly achieved in a single perovskite (NHCINH₃)₃PbI₅ (abbreviated as (IFA)₃PbI₅), which is sandwiched by Ag and ITO electrodes as the simplest cell in a crossbar array device configuration. The iodide ions of (IFA)₃PbI₅ can be easily activated, of which the migration in the bulk contributes to the resistance hysteresis and the reaction with Ag at the interface contributes to the spontaneous formation of AgI. The perfect combination of n-type AgI and p-type (IFA)₃PbI₅ gives rise to the rectification function like a p–n diode. Such a self-rectifying memristor exhibits the record-low set power consumption and voltage. This work emphasizes that the multifunction of ions in perovskites can simplify the fabrication procedure, decrease the programming power, and increase the integration density of future memory devices.