PdSe2 single crystals synthesized by the self-flux method

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY Journal of Crystal Growth Pub Date : 2024-07-02 DOI:10.1016/j.jcrysgro.2024.127812

Vera Marinova , Nikolay Minev , Blagovest Napoleonov , Daniela Karashanova , Peter Rafailov , Daniela Kovacheva , Velichka Strijkova , Bogdan Ranguelov , Valentina Mussi , Walter Fuscaldo , Dimitrios C. Zografopoulos , Dimitre Dimitrov

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Abstract

Palladium diselenide (PdSe₂) is an important transition metal dichalcogenide with a layers-dependent bandgap and many potential applications in electronic and optoelectronic devices. However, the availability of high-quality large-area crystals with phase control is still challenging. Herein, we report the successful growth of large-area PdSe₂ single crystals using the self-flux method. The crystal structure, quality, and elemental composition were characterized by X-ray Diffraction, Energy-Dispersive X-ray Spectroscopy, and High-Resolution Transmission Electron Microscopy (HR TEM). The Raman-active vibrational modes of PdSe₂ were identified using polarized Raman spectroscopy. The controlled synthesis of PdSe₂ enables the potential for a broad range of heterostructures and further integrated optical and electro-optical applications.

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利用自流式方法合成的 PdSe2 单晶体

二硒化钯（PdSe2）是一种重要的过渡金属二硒化物，具有依赖于层的带隙，在电子和光电设备中有许多潜在应用。然而，要获得具有相位控制能力的高质量大面积晶体仍具有挑战性。在此，我们报告了利用自流式方法成功生长大面积 PdSe2 单晶的情况。通过 X 射线衍射、能量色散 X 射线光谱和高分辨率透射电子显微镜（HR TEM）对晶体结构、质量和元素组成进行了表征。利用偏振拉曼光谱鉴定了 PdSe2 的拉曼活性振动模式。PdSe2 的可控合成为广泛的异质结构以及进一步的集成光学和电子光学应用提供了可能。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.