Mengran Sun , Jinlong Shi , Jindong Chen , Chunxiao Li , Jiyong Yao
{"title":"Quality improvement of BaGa4Se7 crystal by annealing in BaSe vapor atmosphere","authors":"Mengran Sun , Jinlong Shi , Jindong Chen , Chunxiao Li , Jiyong Yao","doi":"10.1016/j.jcrysgro.2024.127809","DOIUrl":null,"url":null,"abstract":"<div><p>Infrared nonlinear optical crystals are widely used in all-solid-state lasers as pivotal devices for laser frequency conversion. BaGa<sub>4</sub>Se<sub>7</sub> (BGSe) crystal has attracted much attention due to its excellent optical properties. However, the presence of point defects in BGSe increases the absorption loss and reduces the laser-induced damage threshold, thus limiting its practical application in high-power mid- and far-infrared lasers. Therefore, it is crucial to reveal the types of defects and their formation mechanisms in BGSe crystal, which is conducive to the design of rational strategies to improve the crystal quality. In this work, the defect activation energies were calculated by photoluminescence (PL) spectroscopy and the existence of three types of defects, Ga<sub>Ba</sub>, V<sub>Se</sub> and V<sub>Ba</sub> were verified in the as grown BGSe crystal. Therefore, a thermal annealing process under BaSe vapor was rationally designed to compensate for the loss of Ba and Se elements and to reduce the defect concentration in BGSe. In addition, the changes of defects in BGSe crystal were determined by X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) spectroscopy. All the experimental results confirm that the defect concentration in BGSe decreases greatly and the crystal quality is significantly improved after annealing in BaSe vapor.</p></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":null,"pages":null},"PeriodicalIF":1.7000,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024824002446","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0
Abstract
Infrared nonlinear optical crystals are widely used in all-solid-state lasers as pivotal devices for laser frequency conversion. BaGa4Se7 (BGSe) crystal has attracted much attention due to its excellent optical properties. However, the presence of point defects in BGSe increases the absorption loss and reduces the laser-induced damage threshold, thus limiting its practical application in high-power mid- and far-infrared lasers. Therefore, it is crucial to reveal the types of defects and their formation mechanisms in BGSe crystal, which is conducive to the design of rational strategies to improve the crystal quality. In this work, the defect activation energies were calculated by photoluminescence (PL) spectroscopy and the existence of three types of defects, GaBa, VSe and VBa were verified in the as grown BGSe crystal. Therefore, a thermal annealing process under BaSe vapor was rationally designed to compensate for the loss of Ba and Se elements and to reduce the defect concentration in BGSe. In addition, the changes of defects in BGSe crystal were determined by X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) spectroscopy. All the experimental results confirm that the defect concentration in BGSe decreases greatly and the crystal quality is significantly improved after annealing in BaSe vapor.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.