Chemical polishing strategies to improve flexible perovskite solar cells based on dopant-free hole transport layers

Jiaqi Kong , Yuanqiong Lin , Xin Li
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Abstract

For n-i-p typed flexible perovskite solar cells (fPSCs), the doped hole transport layer significantly impacts the devices' long-term stability. Using dopant-free organic hole transport materials (d-HTMs) is promising for stable fPSCs. However, the low conductivity of d-HTMs limited their thickness, making them sensitive to the surface morphology of the perovskite film's upper surface. Here, we report a chemical polishing strategy using 1-hexyl-3-methylimidazolium acetate (HMIM∙Ac) as the polishing reagent to enhance the upper surface of the perovskite film, which could form a smooth and flat surface. Meanwhile, the treatment can reduce surface defects and smaller grains on top of the surface. Then, we deposite an ultra-thin dopant-free PM6 layer, a typical hole transport layer, on top of the polished perovskite film. The PM6 layer shows an improved face-on orientation and then carrier mobility. Moreover, suppressed non-radiative recombination at the perovskite/PM6 interface is also observed, translating into a higher open-circuit voltage and fill factor of the fPSCs. As a result, a champion power conversion efficiency (PCE) of 17.76 ​%, with an open-circuit voltage of 1.025 ​V and fill factor of 78.2 ​%, is obtained, which is one of the highest PCEs among the reported fPSCs based on d-HTMs. Our strategy demonstrates a facile but effective way of developing high-efficiency and stable fPSCs for future applications.

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改进基于无掺杂空穴传输层的柔性过氧化物太阳能电池的化学抛光策略
对于 ni-p 型柔性过氧化物太阳能电池(fPSC)而言,掺杂空穴传输层对器件的长期稳定性有很大影响。使用不含掺杂剂的有机空穴传输材料(d-HTMs)有望实现稳定的 fPSC。然而,d-HTMs 的低电导率限制了其厚度,使其对过氧化物薄膜上表面的形貌非常敏感。在此,我们报告了一种化学抛光策略,使用 1-hexyl-3-methylimidazolium acetate (HMIM∙Ac) 作为抛光试剂来增强包晶薄膜的上表面,从而形成光滑平整的表面。同时,这种处理还能减少表面缺陷和表面上的小颗粒。然后,我们在抛光后的包晶薄膜上沉积了一层超薄无掺杂的 PM6 层,这是一种典型的空穴传输层。PM6 层改善了面朝上取向,从而提高了载流子迁移率。此外,还观察到在包晶/PM6 界面的非辐射性重组受到抑制,从而转化为更高的开路电压和 fPSC 的填充因子。因此,我们获得了 17.76% 的冠军功率转换效率(PCE),开路电压为 1.025 V,填充因子为 78.2%,这是已报道的基于 d-HTMs 的 fPSC 中最高的 PCE 之一。我们的策略为未来应用开发高效、稳定的 fPSC 展示了一种简便而有效的方法。
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