Silicon-Based 850 nm GaAs/GaAsP-Strained Quantum Well Lasers with Active Region Dislocation Blocking Layers

Abstract

Quantum Well Lasers

Benefitting from the interaction of the GaAs/GaAsP strained quantum well and InAlAs active region dislocation blocking layer, in article number 2300348, Jian Li and co-workers show that the threading dislocation penetration to the quantum well region of the silicon-based quantum well lasers can be bended and blocked. By the introduction of this strain compensate stress control structure, the 850 nm room temperature continuous wave emitting silicon-based quantum well laser exhibits a 94.2 mW power output, a 715 Acm^–2 threshold current density, and enhanced reliability.