Compact model for MFIS-NCFETs considering deep-level interface trap states

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2024-07-09 DOI:10.1007/s10825-024-02194-1

Xin Liu, Shaoman Peng, Heung Nung Lau, Xincheng Huang, Wanling Deng

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Abstract

A direct current (DC) compact model for negative capacitance field-effect transistors (NCFETs) based on a metal-ferroelectric-insulator-semiconductor (MFIS) structure is proposed, considering the influence of deep-level interface trap states. To overcome the bottleneck problem of accurately and efficiently solving models, an explicit algorithm is developed, which is used to solve the complex Landau–Devonshire (LD) formula for the second-order phase transitions in physical models and the transcendental equation of trap density of states and surface potential. Compared with existing algorithms based on analytical surface potential, the new method does not require the numerical methods involving several iterations to obtain more accurate results, and the model can accurately reflect the opposite control effect of interface traps on surface potential and current under different ferroelectric (FE) thicknesses. The high precision of the model was verified through comprehensive numerical calculations and experimental data, indicating that the model can be effectively applied to circuit simulation design under low-power condition.

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考虑深层界面阱态的 MFIS-NCFET 紧凑型模型

考虑到深层界面阱态的影响，提出了一种基于金属-铁电-绝缘体-半导体（MFIS）结构的负电容场效应晶体管（NCFET）直流（DC）紧凑模型。为了克服准确高效求解模型的瓶颈问题，开发了一种显式算法，用于求解物理模型中二阶相变的复杂朗道-德文郡（LD）公式以及阱态密度和表面势的超越方程。与现有的基于解析表面电势的算法相比，新方法不需要多次迭代的数值方法就能得到更精确的结果，而且模型能准确反映不同铁电（FE）厚度下界面陷阱对表面电势和电流的反向控制作用。通过综合数值计算和实验数据验证了该模型的高精度，表明该模型可有效应用于低功耗条件下的电路仿真设计。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.