Vertical field-effect transistor using c-axis aligned crystal indium–gallium–zinc oxide on glass substrate and prototype organic light-emitting diode display

Abstract

This study developed a technology for a vertical field-effect transistor (VFET) incorporating c-axis aligned crystal oxide semiconductor on a Gen 3.5 glass substrate. VFETs, with a channel length of 0.5 μm, demonstrated stable characteristics with minimal variation, higher on-state current compared with low-temperature polysilicon FETs, and extremely low off-state leakage current. A prototype 513-ppi organic light-emitting diode display that features a red, green, and blue stripe arrangement and includes an internal compensation circuit with a configuration of six transistors and two capacitors was fabricated by harnessing the advantageous features of VFETs. Such a display was previously unattainable with planar FETs. Thus, the developed VFET technology presents a viable pathway for achieving ultrahigh-resolution panels on glass substrates.