A. Meléndez-Sans, V. M. Pereira, C. F. Chang, C.-Y. Kuo, C. T. Chen, L. H. Tjeng, S. G. Altendorf
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引用次数: 0
Abstract
We report a comprehensive study of the synthesis of epitaxial SmN thin films on (100) by molecular beam epitaxy under slow-growth conditions. By carefully tuning the substrate temperature and the molecular nitrogen partial pressure, we are able to control the nitrogen content of our samples and produce near-stoichiometric, well-ordered SmN thin films. The influence of nitrogen defects on the samarium ion valence and the electronic structure is investigated by x-ray absorption and photoelectron spectroscopy, suggesting that the empty Sm states may act as a charge reservoir stabilizing the configuration in the nitrogen-deficient compound. The spectra also reveal a significant hybridization of the Sm and N states.
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