Bifurcation Analysis of Electrodynamic Systems Containing Nonlinear Semiconductor Microstructures with Negative Differential Conductivity

IF 0.8 4区 物理与天体物理 Q4 PHYSICS, APPLIED Technical Physics Letters Pub Date : 2024-07-10 DOI:10.1134/s1063785024700445
G. S. Makeeva
{"title":"Bifurcation Analysis of Electrodynamic Systems Containing Nonlinear Semiconductor Microstructures with Negative Differential Conductivity","authors":"G. S. Makeeva","doi":"10.1134/s1063785024700445","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Mathematical simulation of nonlinear effects of frequency multiplication in a semiconductor microstructure with negative differential conductivity (SMNDC) and parametric amplification in an SMNDC with a traveling domain in a microwave strip cavity has been performed based on the solution of a nonlinear 3D diffraction problem. The conditions of occurrence of self-oscillations in the SMNDC depending on the bifurcation parameters (bias field strength and electron concentration in the SMNDC) have been analyzed proceeding from bifurcation points of the nonlinear Maxwell operator.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.8000,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063785024700445","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0

Abstract

Mathematical simulation of nonlinear effects of frequency multiplication in a semiconductor microstructure with negative differential conductivity (SMNDC) and parametric amplification in an SMNDC with a traveling domain in a microwave strip cavity has been performed based on the solution of a nonlinear 3D diffraction problem. The conditions of occurrence of self-oscillations in the SMNDC depending on the bifurcation parameters (bias field strength and electron concentration in the SMNDC) have been analyzed proceeding from bifurcation points of the nonlinear Maxwell operator.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
包含负差分传导性非线性半导体微结构的电动系统的分岔分析
摘要 在解决非线性三维衍射问题的基础上,对具有负差分电导率的半导体微结构(SMNDC)中的频率倍增非线性效应和微波带状腔中具有行域的 SMNDC 中的参数放大进行了数学模拟。从非线性麦克斯韦算子的分岔点出发,分析了取决于分岔参数(偏置场强度和 SMNDC 中的电子浓度)的 SMNDC 中自振荡发生的条件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Technical Physics Letters
Technical Physics Letters 物理-物理:应用
CiteScore
1.50
自引率
0.00%
发文量
44
审稿时长
2-4 weeks
期刊介绍: Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.
期刊最新文献
A New Approach to the Brachistochrone Problem with Allowance for Dry Friction Bifurcation Analysis of Electrodynamic Systems Containing Nonlinear Semiconductor Microstructures with Negative Differential Conductivity Computational Modeling of the Scenario of Resumption of Covid-19 Waves under Pulse Evolution in New Omicron Lines A Hardware–Software Complex for Diagnostics of a Human Being’s Psychophysiological State during the Solution of Cognitive Tasks Effect of an External Electric Field on the Intracenter Optical Transitions in Quasi-Zero-Dimensional Semiconductor Structures
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1