{"title":"Feasibility of a 9 THz HgTe/HgCdTe quantum-well vertical-cavity surface-emitting laser","authors":"A. A. Dubinov, V. Ya. Aleshkin","doi":"10.1007/s10825-024-02198-x","DOIUrl":null,"url":null,"abstract":"<div><p>We propose an original design for a HgCdTe-based terahertz vertical-cavity surface-emitting laser with twenty 5 nm HgTe quantum wells. Feasibility of laser generation at 9 THz and a lattice temperature of 8 K is shown. The estimate of the threshold pump intensity using laser radiation at a wavelength of 5 μm is 3 W/cm<sup>2</sup>, which makes it possible to expect continuous wave (CW) mode lasing. Such a low required pump intensity will make it possible to create a very compact system of a laser pumped by CW mid-infrared quantum cascade laser.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2024-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-024-02198-x","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract
We propose an original design for a HgCdTe-based terahertz vertical-cavity surface-emitting laser with twenty 5 nm HgTe quantum wells. Feasibility of laser generation at 9 THz and a lattice temperature of 8 K is shown. The estimate of the threshold pump intensity using laser radiation at a wavelength of 5 μm is 3 W/cm2, which makes it possible to expect continuous wave (CW) mode lasing. Such a low required pump intensity will make it possible to create a very compact system of a laser pumped by CW mid-infrared quantum cascade laser.
期刊介绍：
he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.
In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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