Electrical stimulation for brighter persistent luminescence

IF 20.6 Q1 OPTICS Light-Science & Applications Pub Date : 2024-07-15 DOI:10.1038/s41377-024-01507-0
Xilin Ma, Yuhua Wang, Takatoshi Seto
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Abstract

An immature understanding of the mechanisms of persistent luminescence (PersL) has hindered the development of new persistent luminescent materials (PersLMs) with increased brightness. In this regard, in-situ direct current (DC) electric field measurements were conducted on a layered structure composed of the SrAl2O4:Eu2+,Dy3+ phosphor, and an electrode. In this study, the photoluminescence (PL) and afterglow properties were investigated with respect to voltage by analyzing the current signal and thermoluminescence (TL) spectroscopy. The intensity of PersL increased due to a novel phenomenon known as “external electric field stimulated enhancement of initial brightness of afterglow”. This dynamic process was illustrated via the use of a rate equation approach, where the electrons trapped by the ultra-shallow trap at 0.022 eV could be transferred through the conduction band during long afterglow. The afterglow intensity could reach 0.538 cd m−2 at a 6 V electric voltage. The design of an electric field stimulation technique enables the enhancement of the intensity of PersLMs and provides a new perspective for exploring the fundamental mechanics of certain established PersLMs.

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电刺激使持续发光更亮
对持久发光(PersL)机理的不成熟认识阻碍了具有更高亮度的新型持久发光材料(PersLMs)的开发。为此,我们对由 SrAl2O4:Eu2+,Dy3+ 荧光粉和电极组成的层状结构进行了原位直流(DC)电场测量。在这项研究中,通过分析电流信号和热释光(TL)光谱,研究了光致发光(PL)和余辉特性与电压的关系。由于一种被称为 "外部电场刺激增强余辉初始亮度 "的新现象,PersL 的强度增加了。这一动态过程是通过使用速率方程的方法来说明的,即被 0.022 eV 的超浅阱捕获的电子可在长余辉期间通过传导带转移。在 6 V 的电压下,余辉强度可达 0.538 cd m-2。电场刺激技术的设计能够增强 PersLM 的强度,并为探索某些已建立的 PersLM 的基本力学提供了新的视角。
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来源期刊
Light-Science & Applications
Light-Science & Applications 数理科学, 物理学I, 光学, 凝聚态物性 II :电子结构、电学、磁学和光学性质, 无机非金属材料, 无机非金属类光电信息与功能材料, 工程与材料, 信息科学, 光学和光电子学, 光学和光电子材料, 非线性光学与量子光学
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