The Impact of Interfacial Recombination on Hysteresis in Back-Contact Perovskite Solar Cells

IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Electronic Materials Pub Date : 2024-07-15 DOI:10.1007/s11664-024-11308-1
Peidong Tian, Yanyan Chang, Shulong Lu, Lian Ji
{"title":"The Impact of Interfacial Recombination on Hysteresis in Back-Contact Perovskite Solar Cells","authors":"Peidong Tian,&nbsp;Yanyan Chang,&nbsp;Shulong Lu,&nbsp;Lian Ji","doi":"10.1007/s11664-024-11308-1","DOIUrl":null,"url":null,"abstract":"<div><p>A back-contact perovskite solar cell (BC-PSC) has been simulated. The J–V curves were calculated with different degrees of the interfacial recombination, and the characteristics of basic physical phenomena inside the device, including carrier concentration distribution, ion concentration distribution, electric potential change, and carrier recombination rate, have also been investigated. It was found that the effect of the perovskite layer’s upper surface (US) interfacial recombination on the hysteresis phenomenon is greater than that of the perovskite layer’s lower surface (LS) interfacial recombination. In addition, it has been found that the inverted hysteresis phenomenon occurs in the BC-PSC with the LS interfacial recombination. Moreover, the hysteresis loops corresponding to the US interfacial recombination of the perovskite layer were close to the short-circuit current side, and the hysteresis loops corresponding to the LS interfacial recombination of the perovskite layer were close to the open-circuit voltage side. These results indicate that both of the US and LS interface recombinations in the BC-PSC play a crucial role in the hysteresis phenomenon.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"53 10","pages":"6003 - 6011"},"PeriodicalIF":2.5000,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Materials","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11664-024-11308-1","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

A back-contact perovskite solar cell (BC-PSC) has been simulated. The J–V curves were calculated with different degrees of the interfacial recombination, and the characteristics of basic physical phenomena inside the device, including carrier concentration distribution, ion concentration distribution, electric potential change, and carrier recombination rate, have also been investigated. It was found that the effect of the perovskite layer’s upper surface (US) interfacial recombination on the hysteresis phenomenon is greater than that of the perovskite layer’s lower surface (LS) interfacial recombination. In addition, it has been found that the inverted hysteresis phenomenon occurs in the BC-PSC with the LS interfacial recombination. Moreover, the hysteresis loops corresponding to the US interfacial recombination of the perovskite layer were close to the short-circuit current side, and the hysteresis loops corresponding to the LS interfacial recombination of the perovskite layer were close to the open-circuit voltage side. These results indicate that both of the US and LS interface recombinations in the BC-PSC play a crucial role in the hysteresis phenomenon.

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面间重组对背接触包光体太阳能电池磁滞的影响
本文模拟了一种背接触钙钛矿太阳能电池(BC-PSC)。计算了不同界面复合程度下的J-V曲线,并研究了器件内部载流子浓度分布、离子浓度分布、电势变化、载流子复合率等基本物理现象的特征。研究发现,钙钛矿层的上表面(US)界面复合对迟滞现象的影响大于钙钛矿层的下表面(LS)界面复合。此外,还发现LS界面复合的BC-PSC中存在反向迟滞现象。钙钛矿层US界面复合对应的磁滞回线靠近短路电流侧,钙钛矿层LS界面复合对应的磁滞回线靠近开路电压侧。这些结果表明,BC-PSC中US和LS界面的重组在迟滞现象中起着至关重要的作用。
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来源期刊
Journal of Electronic Materials
Journal of Electronic Materials 工程技术-材料科学:综合
CiteScore
4.10
自引率
4.80%
发文量
693
审稿时长
3.8 months
期刊介绍: The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.
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