Unequilibrated Charge Carrier Mobility in Organic Semiconductors Measured Using Injection Metal–Insulator–Semiconductor Charge Extraction by Linearly Increasing Voltage

IF 3.7 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Advanced Photonics Research Pub Date : 2024-07-15 DOI:10.1002/adpr.202300325
Mile Gao, Paul L. Burn, Gytis Juška, Almantas Pivrikas
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Abstract

The charge carrier mobility in tris(4-carbazoyl-9-ylphenyl)amine (TCTA), a host and hole transport material typically used in organic light-emitting diodes (OLEDs), is measured using charge carrier electrical injection metal–insulator–semiconductor charge extraction by linearly increasing voltage (i-MIS-CELIV). By employing the injection current i-MIS-CELIV method, charge transport at time scales shorter than the transit times typically observed in standard MIS-CELIV is measured. The i-MIS-CELIV technique enables the experimental measurement of unequilibrated and pretrapped charge carriers. Through a comparison of injection and extraction current transients obtained from i-MIS-CELIV and MIS-CELIV, it is concluded that hole trapping is negligible in evaporated neat films of TCTA within the time-scales relevant to the operational conditions of optoelectronic devices, such as OLEDs. Furthermore, photocarrier generation in conjunction with i-MIS-CELIV (photo-i-MIS-CELIV) to quantify the properties of charge injection from the electrode to the semiconductor of the MIS devices is utilized. Based on the photo-i-MIS-CELIV measurements, it is observed that the contact resistance does not limit the injection current at the TCTA/molybdenum oxide/silver interface. Therefore, when TCTA is employed as the hole transport/electron-blocking layer in OLEDs, it does not significantly reduce the injection current and remains compatible with the high injection current densities required for efficient OLED operation.

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利用线性增加电压的注入式金属-绝缘体-半导体电荷提取法测量有机半导体中的非平衡电荷载流子迁移率
三(4-咔唑酰-9-基苯基)胺(TCTA)是一种通常用于有机发光二极管(OLED)的主电荷和空穴传输材料,我们采用电荷载流子电注入金属-绝缘体-半导体电荷萃取线性增加电压法(i-MIS-CELIV)测量了这种材料中的电荷载流子迁移率。通过采用注入电流 i-MIS-CELIV 方法,可以测量到电荷传输的时间尺度短于标准 MIS-CELIV 通常观察到的传输时间。i-MIS-CELIV 技术能够对未平衡和预俘获的电荷载流子进行实验测量。通过比较 i-MIS-CELIV 和 MIS-CELIV 获得的注入和萃取瞬时电流,可以得出结论:在与 OLED 等光电设备的工作条件相关的时间尺度内,蒸发的 TCTA 纯薄膜中的空穴捕获可以忽略不计。此外,光载流子生成与 i-MIS-CELIV(光 i-MIS-CELIV)相结合,可量化电荷从电极注入 MIS 器件半导体的特性。根据光-i-MIS-CELIV 测量结果,可以发现接触电阻不会限制 TCTA/氧化钼/银界面的注入电流。因此,当 TCTA 用作 OLED 中的空穴传输/电子阻挡层时,它不会显著降低注入电流,并且仍然符合高效 OLED 运行所需的高注入电流密度。
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