Low‐Defect Quantum Dot Lasers Directly Grown on Silicon Exhibiting Low Threshold Current and High Output Power at Elevated Temperatures

IF 3.7 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Advanced Photonics Research Pub Date : 2024-07-10 DOI:10.1002/adpr.202400082
Konstantinos Papatryfonos, Jean‐Christophe Girard, M. Tang, H. Deng, Alwyn Seeds, Christophe David, G. Rodary, Huiyun Liu, D. Selviah
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Abstract

The direct growth of III‐V materials on silicon is a key enabler for developing monolithically integrated lasers, offering substantial potential for ultradense photonic integration in vital communications and computing technologies. However, the III‐V/Si lattice and thermal expansion mismatch pose significant hurdles, leading to defects that degrade lasing performance. This study overcomes this challenge, demonstrating InAs/GaAs‐on‐Si lasers that perform on par with top‐tier lasers on native GaAs substrates. This is achieved through a newly developed epitaxial approach comprising a series of rigorously optimized growth strategies. Atomic‐resolution scanning tunneling microscopy and spectroscopy experiments reveal exceptional material quality in the active region and elucidate the impact of each growth strategy on defect dynamics. The optimized III‐V‐on‐silicon ridge‐waveguide lasers demonstrate a continuous‐wave threshold current as low as 6 mA and high‐temperature operation reaching 165 °C. At 80 °C, critical for data center applications, they maintain a 12 mA threshold and 35 mW output power. Furthermore, lasers fabricated on both Si and GaAs substrates using identical processes exhibit virtually identical average threshold current. By eliminating the performance limitations associated with the GaAs/Si mismatch, this study paves the way for robust and high‐density integration of a broad spectrum of critical III‐V photonic technologies into the silicon ecosystem.
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直接在硅上生长的低缺陷量子点激光器在高温条件下表现出低阈值电流和高输出功率
在硅上直接生长 III-V 材料是开发单片集成激光器的关键因素,为重要通信和计算技术中的超密集光子集成提供了巨大潜力。然而,III-V/Si 晶格和热膨胀不匹配构成了重大障碍,导致了降低激光性能的缺陷。本研究克服了这一挑战,展示了 InAs/GaAs-on-Si 激光器,其性能与原生砷化镓衬底上的顶级激光器相当。这是通过新开发的外延方法(包括一系列严格优化的生长策略)实现的。原子分辨率扫描隧道显微镜和光谱学实验揭示了有源区的优异材料质量,并阐明了每种生长策略对缺陷动力学的影响。经过优化的 III-V 硅脊波导激光器显示出低至 6 mA 的连续波阈值电流和高达 165 °C 的高温工作温度。在 80 °C(数据中心应用的关键温度)时,它们能保持 12 mA 的阈值电流和 35 mW 的输出功率。此外,使用相同工艺在硅衬底和砷化镓衬底上制造的激光器显示出几乎相同的平均阈值电流。通过消除与砷化镓/硅不匹配相关的性能限制,这项研究为在硅生态系统中稳健、高密度地集成各种关键的 III-V 族光子技术铺平了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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