Moataz Eissa, Ryuya Sasaki, Tsuyoshi Horikawa, T. Amemiya, Nobuhiko Nishiyama
{"title":"Wafer and chip-level characterization of edge-coupled photonic integrated circuits by cascaded grating couplers and spot-size converters","authors":"Moataz Eissa, Ryuya Sasaki, Tsuyoshi Horikawa, T. Amemiya, Nobuhiko Nishiyama","doi":"10.35848/1347-4065/ad5fd5","DOIUrl":null,"url":null,"abstract":"\n This study presents an efficient testing process for characterizing silicon photonic integrated circuits. This process utilizes a coupling structure that integrates grating couplers and spot-size converters for efficient testing both at the chip and wafer levels, respectively. By leveraging wafer-level testing to estimate the characteristics of final chip-level devices, we anticipate a reduction in testing costs. To demonstrate the validity of the proposed testing process, we fabricated and measured silicon-on-insulator ring resonator devices on both wafer and chip levels. The results showed good agreement between the two levels of measurement, validating the effectiveness of our proposed testing process.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":" 8","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad5fd5","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This study presents an efficient testing process for characterizing silicon photonic integrated circuits. This process utilizes a coupling structure that integrates grating couplers and spot-size converters for efficient testing both at the chip and wafer levels, respectively. By leveraging wafer-level testing to estimate the characteristics of final chip-level devices, we anticipate a reduction in testing costs. To demonstrate the validity of the proposed testing process, we fabricated and measured silicon-on-insulator ring resonator devices on both wafer and chip levels. The results showed good agreement between the two levels of measurement, validating the effectiveness of our proposed testing process.