Vladimir M. Kravchenko, V. Malyutina-Bronskaya, H. S. Kuzmitskaya, Anton V. Nestsiaronak
{"title":"Optically transparent highly conductive contact based on ITO and copper metallization for solar cells","authors":"Vladimir M. Kravchenko, V. Malyutina-Bronskaya, H. S. Kuzmitskaya, Anton V. Nestsiaronak","doi":"10.3897/j.moem.10.2.129762","DOIUrl":null,"url":null,"abstract":"This paper presents the results of obtaining and studying the electrical and optical characteristics of an optically transparent highly conductive Ni/Cu/Ti/ITO contact in order to reduce electrical resistance losses on the front side of the silicon solar cell. The topology of the contact metallization is a square 50 × 50 mm2 with an interdigitated electrode structure. A Ni/Cu/Ti contact metallization formed on ITO layer reduces the surface resistance by more than 60 times. It has been shown that the use of a Ni/Cu/Ti contact with a finger thickness of at least 1.5 μm and a width of 17 μm was formed is a good alternative to traditional contacts for silicon solar cells based on silver paste.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"26 35","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Modern Electronic Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3897/j.moem.10.2.129762","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents the results of obtaining and studying the electrical and optical characteristics of an optically transparent highly conductive Ni/Cu/Ti/ITO contact in order to reduce electrical resistance losses on the front side of the silicon solar cell. The topology of the contact metallization is a square 50 × 50 mm2 with an interdigitated electrode structure. A Ni/Cu/Ti contact metallization formed on ITO layer reduces the surface resistance by more than 60 times. It has been shown that the use of a Ni/Cu/Ti contact with a finger thickness of at least 1.5 μm and a width of 17 μm was formed is a good alternative to traditional contacts for silicon solar cells based on silver paste.