L. Gray, Kadaba Swathi, Dundappa Mumbaraddi, Timothy W. Carlson, G. Marcus, David Carroll
{"title":"Solvothermal synthesis of crystalline 2D bismuth telluride with an isoelectronic dopant","authors":"L. Gray, Kadaba Swathi, Dundappa Mumbaraddi, Timothy W. Carlson, G. Marcus, David Carroll","doi":"10.1063/5.0221583","DOIUrl":null,"url":null,"abstract":"In this work, we present a solvothermal, in situ doping methodology for synthesizing crystalline doped 2D bismuth telluride (Bi2Te3) nanoplates. Isoelectronic antimony (Sb) substitution at the bismuth (Bi) site is chosen to minimize the lattice strain in the nanostructure. Using a combination of x-ray techniques and electron microscopy, we demonstrate that the rhombohedral crystal structure (space group R3̄m), characteristic of Bi2Te3 is preserved in few-quintuple-layer, hexagonal nanoplates. Our findings reveal a uniform dispersion of Sb within the nanoplates up to an atomic concentration of 1%. Beyond this threshold, a disordered SbTe alloy begins to form along the crystal edges in addition to Sb substitution at the Bi sites in the bulk, restricting further growth of the nanoplates. In addition, we examine the different stresses that develop within the nanoplates as lattice strain increases due to Sb substitution. This study provides fundamental insights into the dopant’s effect on the self-assembled growth of electronically relevant 2D crystals.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":null,"pages":null},"PeriodicalIF":5.3000,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"APL Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1063/5.0221583","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, we present a solvothermal, in situ doping methodology for synthesizing crystalline doped 2D bismuth telluride (Bi2Te3) nanoplates. Isoelectronic antimony (Sb) substitution at the bismuth (Bi) site is chosen to minimize the lattice strain in the nanostructure. Using a combination of x-ray techniques and electron microscopy, we demonstrate that the rhombohedral crystal structure (space group R3̄m), characteristic of Bi2Te3 is preserved in few-quintuple-layer, hexagonal nanoplates. Our findings reveal a uniform dispersion of Sb within the nanoplates up to an atomic concentration of 1%. Beyond this threshold, a disordered SbTe alloy begins to form along the crystal edges in addition to Sb substitution at the Bi sites in the bulk, restricting further growth of the nanoplates. In addition, we examine the different stresses that develop within the nanoplates as lattice strain increases due to Sb substitution. This study provides fundamental insights into the dopant’s effect on the self-assembled growth of electronically relevant 2D crystals.
期刊介绍:
APL Materials features original, experimental research on significant topical issues within the field of materials science. In order to highlight research at the forefront of materials science, emphasis is given to the quality and timeliness of the work. The journal considers theory or calculation when the work is particularly timely and relevant to applications.
In addition to regular articles, the journal also publishes Special Topics, which report on cutting-edge areas in materials science, such as Perovskite Solar Cells, 2D Materials, and Beyond Lithium Ion Batteries.