Highly efficient In(I) doped Cs3Cu2I5 single crystals for light-emitting diodes and gamma spectroscopy applications

Q2 Engineering Optical Materials: X Pub Date : 2024-07-01 DOI:10.1016/j.omx.2024.100335

Xuemin Wen , Qiang Gao , Qian Wang , Weerapong Chewpraditkul , Mikhail Korjik , Shunsuke Kurosawa , Maksym Buryi , Vladimir Babin , Yuntao Wu

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Abstract

High-quality Cs₃Cu₂I₅:In single crystals with a 7 mm diameter were grown by using the vertical Bridgman method. These crystals have a high optical transmittance (>75 %) and emit a bright red-orange light under both UV and X-ray irradiation. The Cs₃Cu₂I₅:In crystals can exhibit a high photoluminescence quantum efficiency (PLQY) of 79.5 %, thus we explored the potential applications for light-emitting diodes (LED). The fabricated LED demonstrated CIE color coordinates of (0.553, 0.431) with a color rendering index (Ra) of 77, making it suitable for supplementary light in plant growth. Moreover, we evaluated their gamma-ray spectroscopy capability by using an avalanche photodiode (APD) detector. Under ¹³⁷Cs gamma-ray irradiation, the gamma scintillation yield and energy resolution gradually degraded as the In concentration increased, which can be attributed to an enhanced afterglow after In doping.

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用于发光二极管和伽马光谱应用的高效 In（I）掺杂 Cs3Cu2I5 单晶体

利用垂直布里奇曼法培育出了直径为 7 毫米的高质量 Cs3Cu2I5:In 单晶体。这些晶体具有很高的透光率（75%），在紫外线和 X 射线照射下可发出明亮的橘红色光。Cs3Cu2I5:In 晶体的光致发光量子效率（PLQY）高达 79.5%，因此我们探索了其在发光二极管（LED）中的潜在应用。制造出的发光二极管的 CIE 色坐标为（0.553, 0.431），显色指数（Ra）为 77，因此适合作为植物生长的辅助光源。此外，我们还利用雪崩光电二极管（APD）探测器评估了其伽马射线光谱分析能力。在 137Cs 伽马射线辐照下，伽马闪烁产率和能量分辨率随着铟浓度的增加而逐渐降低，这可能是由于掺入铟后余辉增强所致。

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