Highly efficient In(I) doped Cs3Cu2I5 single crystals for light-emitting diodes and gamma spectroscopy applications

Q2 Engineering Optical Materials: X Pub Date : 2024-07-01 DOI:10.1016/j.omx.2024.100335

{"title":"Highly efficient In(I) doped Cs3Cu2I5 single crystals for light-emitting diodes and gamma spectroscopy applications","authors":"","doi":"10.1016/j.omx.2024.100335","DOIUrl":null,"url":null,"abstract":"<div>High-quality Cs3Cu2I5:In single crystals with a 7 mm diameter were grown by using the vertical Bridgman method. These crystals have a high optical transmittance (>75 %) and emit a bright red-orange light under both UV and X-ray irradiation. The Cs3Cu2I5:In crystals can exhibit a high photoluminescence quantum efficiency (PLQY) of 79.5 %, thus we explored the potential applications for light-emitting diodes (LED). The fabricated LED demonstrated CIE color coordinates of (0.553, 0.431) with a color rendering index (Ra) of 77, making it suitable for supplementary light in plant growth. Moreover, we evaluated their gamma-ray spectroscopy capability by using an avalanche photodiode (APD) detector. Under 137Cs gamma-ray irradiation, the gamma scintillation yield and energy resolution gradually degraded as the In concentration increased, which can be attributed to an enhanced afterglow after In doping.</div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2590147824000470/pdfft?md5=7269a507f016dfa0bc94a9d377e0ba88&pid=1-s2.0-S2590147824000470-main.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Materials: X","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2590147824000470","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"Engineering","Score":null,"Total":0}

引用次数: 0

Abstract

High-quality Cs₃Cu₂I₅:In single crystals with a 7 mm diameter were grown by using the vertical Bridgman method. These crystals have a high optical transmittance (>75 %) and emit a bright red-orange light under both UV and X-ray irradiation. The Cs₃Cu₂I₅:In crystals can exhibit a high photoluminescence quantum efficiency (PLQY) of 79.5 %, thus we explored the potential applications for light-emitting diodes (LED). The fabricated LED demonstrated CIE color coordinates of (0.553, 0.431) with a color rendering index (Ra) of 77, making it suitable for supplementary light in plant growth. Moreover, we evaluated their gamma-ray spectroscopy capability by using an avalanche photodiode (APD) detector. Under ¹³⁷Cs gamma-ray irradiation, the gamma scintillation yield and energy resolution gradually degraded as the In concentration increased, which can be attributed to an enhanced afterglow after In doping.

Abstract Image

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

用于发光二极管和伽马光谱应用的高效 In（I）掺杂 Cs3Cu2I5 单晶体

利用垂直布里奇曼法培育出了直径为 7 毫米的高质量 Cs3Cu2I5:In 单晶体。这些晶体具有很高的透光率（75%），在紫外线和 X 射线照射下可发出明亮的橘红色光。Cs3Cu2I5:In 晶体的光致发光量子效率（PLQY）高达 79.5%，因此我们探索了其在发光二极管（LED）中的潜在应用。制造出的发光二极管的 CIE 色坐标为（0.553, 0.431），显色指数（Ra）为 77，因此适合作为植物生长的辅助光源。此外，我们还利用雪崩光电二极管（APD）探测器评估了其伽马射线光谱分析能力。在 137Cs 伽马射线辐照下，伽马闪烁产率和能量分辨率随着铟浓度的增加而逐渐降低，这可能是由于掺入铟后余辉增强所致。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊