Optical Materials: X最新文献

Luminescence of copper-doped α-quartz crystal after oxygen treatment 氧处理后掺铜 α-石英晶体的发光特性

Q2 Engineering

Optical Materials: X

Pub Date : 2024-11-23 DOI: 10.1016/j.omx.2024.100381

A. Trukhin

Treatment of copper-doped natural α-quartz in oxygen atmosphere at 1200 °C leads to changes in luminescence properties. The luminescence center of AlO₄⁻-Cu⁺ is modified. The intensity is low in the annealed sample and increases after X-ray irradiation at 293 K. Annealing of the irradiated sample leads to a strong peak of thermally stimulated luminescence (TSL) at ∼500 K. Its spectral composition is mainly due to the AlO₄⁻-Cu⁺ center. Irradiation of the sample treated with oxygen at 77 K gives a new TSL peak at ∼180 K and a peak at 244 K existing in the untreated sample. Both peaks were attributed to Cu^o centers released from different sites and recombined with a hole in AlO₄ having additional oxygen. The introduction of copper ions into quartz removes alkali metal ions and eliminates the corresponding luminescence, but after treatment in oxygen, luminescence with similar parameters is restored at low temperatures. In this case, only the glow of the AlO₄⁻-Cu⁺ center is observed in the recombination luminescence (TSL and afterglow). Therefore, modification of the AlO₄⁻-Cu ⁺ center with oxygen imparts to this center properties similar to the complex center AlO₄⁻ (K, Na or Li ion) with monovalent aluminum ions, although the alkali ions are replaced by copper ions. The oxygen-treated sample exhibits an increased efficiency of energy transfer by excitons to the luminescence center, measured as excitation spectra in the region of fundamental absorption of silicon dioxide. The X-ray excitation of the self-trapped exciton luminescence does not depend on oxygen treatment. Also, the spectra of intrinsic optical reflection and Raman scattering do not change compared to the untreated sample. The obtained result is interpreted as a modification of the defect by high-temperature treatment in oxygen.

在 1200 °C 氧气环境中处理掺铜天然 α-石英会导致发光特性发生变化。AlO4-Cu+ 的发光中心发生了变化。退火样品的发光强度较低，而在 293 K 的 X 射线辐照下，发光强度会增加。辐照样品退火后，在 ∼500 K 处会出现一个强烈的热激发发光（TSL）峰。在 77 K 下用氧气辐照处理过的样品，会在 ∼180 K 处出现一个新的 TSL 峰，而未经处理的样品则会在 244 K 处出现一个峰。这两个峰都是由于 Cuo 中心从不同位置释放出来，并与 AlO4 中含有额外氧的空穴重新结合。在石英中引入铜离子会移除碱金属离子并消除相应的发光，但在氧气中处理后，低温下会恢复具有类似参数的发光。在这种情况下，在重组发光（TSL 和余辉）中只能观察到 AlO4-Cu+ 中心的辉光。因此，氧对 AlO4-Cu+ 中心的修饰赋予了该中心类似于带有单价铝离子的复合中心 AlO4-（K、Na 或 Li 离子）的特性，尽管碱离子被铜离子取代了。经过氧处理的样品显示，激子向发光中心转移能量的效率有所提高。自俘获激子发光的 X 射线激发与氧处理无关。此外，与未处理的样品相比，本征光学反射和拉曼散射的光谱也没有变化。这一结果被解释为在氧气中进行高温处理后，缺陷发生了改变。

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引用次数: 0

The effect of temperature factor during heavy ion irradiation on structural disordering of SiC ceramics 重离子辐照时的温度因素对碳化硅陶瓷结构紊乱的影响

Q2 Engineering

Optical Materials: X

Pub Date : 2024-11-23 DOI: 10.1016/j.omx.2024.100383

Kymbat M. Tynyshbayeva , Artem L. Kozlovskiy

The paper presents the results of the influence of heavy ion irradiation on the formation of anisotropic distortions of the crystal structure and electron density distribution in SiC ceramics. The assessment of the change in the properties of the damaged layer was carried out using Raman spectroscopy methods, and using data on structural changes obtained using the X-ray diffraction method. The observed alterations in the spectral modes E₁(TO), E₂(TO) and A₁(LO) depending on the irradiation temperature indicate an anisotropic distortion of the structure, which has a clearly expressed dependence on the irradiation temperature, as well as the type of ions used for irradiation. The assessment results of changes in the electron density distribution contingent upon the irradiation temperature for both types of ion irradiation showed a direct correlation between the irradiation temperature growth and the electron density anisotropic distortion caused by the deformation of chemical bonds. In turn, the combination of the effects of thermal heating and ionization processes causes deformation distortion of chemical bonds, which is most pronounced at high irradiation temperatures, for which thermal expansion of the crystal lattice and accelerated diffusion of vacancy defects play a key role in disordering.

本文介绍了重离子辐照对碳化硅陶瓷晶体结构和电子密度分布形成各向异性畸变的影响结果。利用拉曼光谱方法和 X 射线衍射方法获得的结构变化数据，对受损层的性质变化进行了评估。观察到的光谱模式 E1(TO)、E2(TO) 和 A1(LO)的变化取决于辐照温度，这表明结构发生了各向异性的畸变，这种畸变与辐照温度以及辐照所用离子的类型有明显的关系。对两种离子辐照的电子密度分布随辐照温度变化的评估结果表明，辐照温度增长与化学键变形导致的电子密度各向异性畸变之间存在直接关联。反过来，热加热和电离过程的综合效应也会导致化学键的变形畸变，这种畸变在高辐照温度下最为明显，因为晶格的热膨胀和空位缺陷的加速扩散在无序化过程中起着关键作用。

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引用次数: 0

Synthesis and optical properties of LaSrGaO4:RE3+ (RE = Sm, Eu, Ho) single crystals via optical float zone method 通过光学浮区法合成 LaSrGaO4:RE3+（RE = Sm、Eu、Ho）单晶体及其光学特性

Q2 Engineering

Optical Materials: X

Pub Date : 2024-11-21 DOI: 10.1016/j.omx.2024.100380

Hasan Yilmaz , Masahiko Isobe , Oliver Clemens , Markus Suta , Pascal Puphal

The advancement of synthesis of materials with luminescence properties of lanthanoid ions in various single crystalline host compounds with low phonon energies has facilitated the optimization of numerous materials to meet the specific optical properties required for diverse applications such as new energy resource exploration, light-emitting diodes (LEDs), quantum dot displays, laser technology, sensors, telecommunications, medical diagnostics and more. Enhanced analyses of the luminescence mechanism of lanthanoid ions in various host compounds, which have captivated researchers for many years and culminated in the development of innovative materials for optical applications. To obtain a deeper understanding of the luminescence mechanism of Sm³⁺, Eu³⁺, and Ho³⁺ ions incorporated into the Ruddlesden-Popper-type host compounds (La_1-xRE_x)SrGaO₄ (RE = Sm, Eu, Ho and x = 0; 0.05; 0.10) high quality single crystals with homogenous activator distribution grown by the optical floating zone (OFZ) method were examined systematically. X-ray diffraction (XRD) characterization shows that the compound crystallizes in a tetragonal crystal system with the space group I4/mmm (no. 139) with homogenous distribution of the dopants shown via backscattered electron (BSE) imaging. Photoluminescence studies at both 77 K and 298 K reveal that the incorporated lanthanoid ions brightly emit and even show unusual transitions due to the low cutoff phonon energy of the host compound that limits non-radiative loss pathways. Together with a high physical density of ∼6.4 g/cm³, these phosphors could be conceptualized as interesting candidates for X-ray imaging phosphors aiming at high light yields.

在具有低声子能量的各种单晶宿主化合物中合成具有镧系离子发光特性的材料方面取得的进展，促进了众多材料的优化，以满足新能源勘探、发光二极管（LED）、量子点显示器、激光技术、传感器、电信、医疗诊断等不同应用所需的特定光学特性。加强分析镧系元素离子在各种宿主化合物中的发光机理，多年来一直吸引着研究人员，并最终开发出用于光学应用的创新材料。为了更深入地了解加入 Ruddlesden-Popper 型宿主化合物 (La1-xREx)SrGaO4 （RE = Sm、Eu、Ho，x = 0；0.05；0.10）中的 Sm3+、Eu3+ 和 Ho3+ 离子的发光机理，我们对通过光学浮动区 (OFZ) 方法生长的具有均匀活化剂分布的高质量单晶进行了系统研究。X 射线衍射（XRD）表征表明，该化合物在空间群为 I4/mmm（编号 139）的四方晶系中结晶，并通过背散射电子（BSE）成像显示出掺杂剂的均匀分布。在 77 K 和 298 K 两种温度下进行的光致发光研究表明，由于主化合物的低截止声子能量限制了非辐射损失途径，掺入的镧系离子会发出明亮的光，甚至会出现不寻常的转变。这些荧光粉的物理密度高达 6.4 克/立方厘米，因此可被视为具有高光产率的 X 射线成像荧光粉的理想候选材料。

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引用次数: 0

Optical and EPR study of Mn4+ ions in different crystal environments in Mn, Li co-doped MgO 锰、锂共掺氧化镁中不同晶体环境下 Mn4+ 离子的光学和 EPR 研究

Q2 Engineering

Optical Materials: X

Pub Date : 2024-11-06 DOI: 10.1016/j.omx.2024.100378

L. Borkovska , K. Kozoriz , I. Vorona , O. Gudymenko , S. Ponomaryov , O. Melnichuk , V. Trachevskii , O. Chukova , L. Khomenkova

The influence of Li ion on the symmetry of Mn⁴⁺ center and its photoluminescence (PL) in MgO:0,01%Mn, 3 % Li ceramics is studied by the X-ray diffraction, electron paramagnetic resonance (EPR), PL and optical absorption methods. It is shown that Li co-doping stimulates conversion of Mn²⁺ on Mg site into Mn⁴⁺ and can decrease symmetry of Mn⁴⁺ in a case of their specific close arrangement in the crystal lattice. Two kinds of Mn⁴⁺ centers are identified in the EPR and PL spectra: cubic Mn⁴⁺ and tetragonal complex Mn⁴⁺-Li⁺. The parameters of corresponding EPR centers are estimated from the experimental spectra (g_cub = 1.994, |A|_cub = 70.9 × 10⁴ cm⁻¹; g_1tetr = g_2tetr = 1.994, g_3tetr = 1.993, |A|_tetr = 71 × 10⁴ cm⁻¹, |D|_tetr = 220 × 10⁴ cm⁻¹). The PL lines observed in the low temperature PL spectra are assigned to the specific Mn⁴⁺ related centers using a complementary study of PL excitation spectra and temperature dependent PL spectra. The lines at 654 nm and 671 nm are ascribed to R-line of Mn⁴⁺ in a site of cubic symmetry and its phonon overtone, correspondingly, as well as the lines at 666 nm and 681 nm are attributed to R2 line of Mn⁴⁺ in site with tetragonal symmetry and to its phonon overtone, correspondingly. It is shown that in Mn doped MgO ceramics made without intentional Li co-doping, the cubic Mn⁴⁺ center can be present and contribute to the PL spectra.

通过 X 射线衍射、电子顺磁共振 (EPR)、PL 和光吸收方法研究了锂离子对 MgO:0.01%Mn, 3%Li 陶瓷中 Mn4+ 中心对称性及其光致发光 (PL) 的影响。研究表明，锂的共掺会刺激镁位点上的 Mn2+ 转化为 Mn4+，并在 Mn4+ 在晶格中紧密排列的情况下降低其对称性。在 EPR 和 PL 光谱中发现了两种 Mn4+ 中心：立方 Mn4+ 和四方复合 Mn4+-Li+。根据实验光谱估算出了相应的 EPR 中心参数（gcub = 1.994，|A|cub = 70.9 × 104 cm-1；g1tetr = g2tetr = 1.994，g3tetr = 1.993，|A|tetr = 71 × 104 cm-1，|D|tetr = 220 × 104 cm-1）。通过对聚光激发光谱和随温度变化的聚光光谱进行补充研究，将低温聚光光谱中观察到的聚光线归属于特定的 Mn4+ 相关中心。654 nm 和 671 nm 处的线分别归因于立方对称位点中 Mn4+ 的 R 线及其声子泛音，666 nm 和 681 nm 处的线分别归因于四方对称位点中 Mn4+ 的 R2 线及其声子泛音。结果表明，在掺锰的氧化镁陶瓷中，如果没有刻意掺入锂，立方的 Mn4+ 中心就会存在，并对聚光光谱做出贡献。

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引用次数: 0

Modulation of spectroscopic properties in the YXO4 compounds (where X = V5+, P5+, As5+) doped with Eu3+ ions 掺杂 Eu3+ 离子的 YXO4 化合物（其中 X = V5+、P5+、As5+）的光谱特性变化

Q2 Engineering

Optical Materials: X

Pub Date : 2024-10-29 DOI: 10.1016/j.omx.2024.100377

Adam Watras , Marta Kardach , Katarzyna Szyszka , Paulina Sobierajska , Aleksandra Bartkowiak , Rafal J. Wiglusz

In the present work, a co-precipitation method was employed to prepare nanosized YXO₄ (X = V⁵⁺, P⁵⁺, As⁵⁺) doped with Eu³⁺ ions. The raw nanomaterials have been thermally treated in temperature range between 300 and 1100 °C for 3h. The XRD analysis demonstrated that the powders were single-phase with high crystallite dispersion. The studies focused on investigating the systematic relationship between crystallographic parameters and spectroscopic properties. The average size of the obtained materials was 30 nm for YVO4, 35 nm for YPO₄, and 20 nm for YAsO₄, respectively.

Moreover, the emission and excitation spectra, although typical for Eu³⁺ ions, demonstrated some degree of variability with calcination temperatures and doping concentration. Thermal luminescence quenching was typical for YPO₄ and YAsO₄ samples, while for the YVO₄ samples, the intensity of emission increased, reaching its maximum at 725 K. To explain this phenomenon, excitation spectra in function of temperature were measured.

本研究采用共沉淀法制备了掺杂 Eu3+ 离子的纳米级 YXO4（X = V5+、P5+、As5+）。原始纳米材料在 300 至 1100 °C 的温度范围内经过 3 小时的热处理。XRD 分析表明，这些粉末是单相的，具有较高的晶体分散性。研究的重点是调查晶体学参数与光谱特性之间的系统关系。所得材料的平均粒度分别为：YVO4 30 nm、YPO4 35 nm 和 YAsO4 20 nm。此外，发射光谱和激发光谱虽然是 Eu3+ 离子的典型光谱，但随着煅烧温度和掺杂浓度的不同而呈现出一定程度的变化。对于 YPO4 和 YAsO4 样品来说，热淬灭是典型的发光现象，而对于 YVO4 样品来说，发射强度增加，在 725 K 时达到最大值。

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引用次数: 0

The effect of residual mechanical stresses and vacancy defects on the diffusion expansion of the damaged layer during irradiation of BeO ceramics 氧化铍陶瓷辐照过程中残余机械应力和空位缺陷对受损层扩散扩展的影响

Q2 Engineering

Optical Materials: X

Pub Date : 2024-10-17 DOI: 10.1016/j.omx.2024.100375

Azamat E. Ryskulov , Igor A. Ivanov , Artem L. Kozlovskiy , Marina Konuhova

The paper presents the results of a study on the application of Raman and UV spectroscopy methods to determine the structural damage kinetics in the near-surface layer of BeO ceramics caused by high-dose irradiation with He²⁺ ions. Interest in this type of ceramics is due to the combination of its structural and thermophysical parameters, making these ceramics one of the promising classes of materials for microelectronics and structural materials for nuclear reactors, with the possibility of operation in conditions of heightened radiation background. According to the conducted studies, it was established that with the irradiation fluence growth, changes in the nature of deformation structural distortions associated with the accumulation of residual mechanical stresses of tensile and compressive types are observed. At irradiation fluences of 10¹⁶–5 × 10¹⁶ Не²⁺/cm², tensile stresses play a dominant role in structural distortions, while the value of compressive stresses at fluence growth makes up a small share in the overall nature of the deformations. Moreover, an elevation in the irradiation fluence above 5 × 10¹⁶ He²⁺/cm² leads to a rise in the concentration of defects caused by the formation of oxygen vacancies, as well as He-V_O type complexes, the presence of which is indicated by the halo intensity growth in the Raman spectra, as well as a change in the intensity of the absorption bands. Analysis of changes in thermophysical parameters revealed that a rise in structural distortions associated with the accumulation of complex defects results in thermal conductivity reduction and a deterioration in heat transfer processes associated with partial amorphization of the damaged layer. Moreover, the established direct relationship between the value of residual mechanical stresses and the degradation of thermal conductivity indicates the cumulative effect of destructive changes caused by irradiation, as well as the influence of diffusion mechanisms on the damaged layer thickness growth.

本文介绍了应用拉曼光谱和紫外光谱方法确定 He2+ 离子高剂量辐照导致 BeO 陶瓷近表面层结构损伤动力学的研究结果。人们之所以对这类陶瓷感兴趣，是因为其结构参数和热物理参数相结合，使这类陶瓷成为微电子材料和核反应堆结构材料中很有前途的一类材料，并有可能在高辐射本底条件下工作。根据所进行的研究，可以确定随着辐照通量的增加，与拉伸和压缩类型的残余机械应力积累相关的变形结构扭曲的性质也会发生变化。当辐照通量为 1016-5 × 1016 Не2+/cm2 时，拉应力在结构变形中起主导作用，而在通量增长时，压应力值在变形的总体性质中只占很小的比例。此外，辐照通量提高到 5 × 1016 He2+/cm2 以上时，氧空位以及 He-VO 型复合物的形成会导致缺陷浓度上升，拉曼光谱中晕强度的增长以及吸收带强度的变化都表明了这些缺陷的存在。对热物理参数变化的分析表明，与复合缺陷积累相关的结构畸变增加导致热导率降低，与受损层部分非晶化相关的传热过程恶化。此外，残余机械应力值与热导率下降之间的直接关系表明，辐照造成的破坏性变化具有累积效应，而且扩散机制对受损层厚度增长也有影响。

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引用次数: 0

Effect of irradiation temperature on the mobility of structural and vacancy defects in the damaged layer of Li2ZrO3 ceramics 辐照温度对 Li2ZrO3 陶瓷受损层中结构缺陷和空位缺陷迁移率的影响

Q2 Engineering

Optical Materials: X

Pub Date : 2024-10-16 DOI: 10.1016/j.omx.2024.100376

Bauyrzhan K. Abyshev , Sholpan G. Giniyatova , Artem L. Kozlovskiy

The paper presents the assessment results of the irradiation temperature effect on the change in the type of structural defects caused by irradiation with helium ions in the near-surface layer of Li₂ZrO₃ ceramics, as well as determining the nature of structural damage using the electron paramagnetic resonance method in the case of irradiation fluence variation. During characterization of the structural changes caused by helium ion irradiation, the main attention was paid to detailing the type of structural defects and radiolysis products arising during irradiation, alongside alterations in their concentration using the electron paramagnetic resonance method. During the experiments, it was determined that the observed effects of thermally stimulated mobility of vacancy defects in the damaged layer caused by irradiation with helium ions indicate a positive effect of thermal heating of samples during irradiation at low fluences. This effect consists in a decline in the number of oxygen vacancies in the damaged layer at low irradiation fluences (10¹⁵–10¹⁶ cm⁻²), the concentration of which was determined using the EPR method, and the observed structural changes at low irradiation fluences in the case of an elevation in irradiation temperatures are associated with deformation distortion of the crystalline structure of ceramics caused by transformation energy processes, and thermal expansion effects.

本文介绍了辐照温度对氦离子辐照 Li2ZrO3 陶瓷近表面层所引起的结构缺陷类型变化的影响的评估结果，以及在辐照通量变化的情况下使用电子顺磁共振方法确定结构损伤的性质。在表征氦离子辐照引起的结构变化时，主要关注辐照过程中产生的结构缺陷和放射性分解产物的类型，以及利用电子顺磁共振法确定其浓度变化。在实验过程中，观察到氦离子辐照造成的受损层中空位缺陷的热刺激迁移效应，这表明在低通量辐照过程中样品的热加热具有积极作用。这种效应包括在低辐照通量（1015-1016 cm-2）下受损层中氧空位数量的下降，氧空位的浓度是用 EPR 方法测定的，在辐照温度升高的情况下，在低辐照通量下观察到的结构变化与转化能过程引起的陶瓷晶体结构变形扭曲和热膨胀效应有关。

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引用次数: 0

Application of ion modification for alteration of anode materials based on ZnO/CoZn nanostructures 应用离子改性技术改变基于 ZnO/CoZn 纳米结构的阳极材料

Q2 Engineering

Optical Materials: X

Pub Date : 2024-10-16 DOI: 10.1016/j.omx.2024.100374

Ainur M. Zikirina , Artem L. Kozlovskiy , Inesh E. Kenzhina

During the conducted studies, it was established that the use of ion modification by irradiation with O⁺ and Ar⁺ ions makes it possible to elevate the degradation resistance of anode materials due to the effect of vacancy defect creation, the density of which varies with the irradiation fluence. At the same time, the analysis of changes in the band gap and the optical density value, expressing changes in structural distortions, revealed that ion irradiation leads to a rise in the stability of the preservation of electronic properties during long-term resource tests, which are inextricably linked with the degradation of ZnO/CoZn nanostructures due to oxidation processes as a result of lithiation. During assessment of changes in the parameters of the band gap and optical density of the samples after resource tests, it was found that the observed growth in these indicators is due to oxidation processes and partial amorphization due to the formation of oxide inclusions in the structure of nanowires, the presence of which is due to the interaction of nanostructures with the electrolyte over a long period of time during charging/discharging, which results in near-surface layer degradation due to the introduction of oxygen, and in the case of a long service life, to the formation of oxide inclusions that elevate the density of defects and vacancies in the structure. According to tests of synthesized ZnO/CoZn nanostructures as anode materials, it was found that the use of O⁺ and Ar⁺ ions not only leads to a growth in the degradation resistance of capacitive characteristics during long-term tests, but also to the stability maintenance of indicators with a reversible decrease in the charging rate at charging rate variation.

在研究过程中发现，利用 O+ 和 Ar+ 离子辐照进行离子改性可以提高阳极材料的抗降解性，这是由于空位缺陷产生的影响，空位缺陷的密度随辐照能量的变化而变化。与此同时，通过分析表示结构畸变的带隙和光密度值的变化，发现离子辐照导致在长期资源试验中保持电子特性的稳定性提高，这与氧化过程导致的氧化锌/氧化钴纳米结构的降解密不可分。在对资源测试后样品带隙和光密度参数的变化进行评估时发现，观察到的这些指标的增长是由于氧化过程和纳米线结构中氧化物夹杂物的形成所导致的部分非晶化、氧化物的存在是由于纳米结构在充电/放电过程中与电解液长期相互作用，氧气的进入导致近表面层退化，在使用寿命较长的情况下，氧化物夹杂物的形成提高了结构中缺陷和空位的密度。根据对合成的 ZnO/CoZn 纳米结构作为阳极材料进行的测试发现，在长期测试中，使用 O+ 和 Ar+ 离子不仅会导致电容特性的抗降解能力增强，而且还能保持指标的稳定性，在充电速率变化时充电速率会可逆地降低。

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引用次数: 0

Review of thermal neutron scintillators: Evaluation metrics and future prospects for demanding applications 热中子闪烁体回顾：高要求应用的评估指标和未来前景

Q2 Engineering

Optical Materials: X

Pub Date : 2024-10-16 DOI: 10.1016/j.omx.2024.100373

G. Jeff Sykora, Sarah E. Mann, Giacomo Mauri, Erik M. Schooneveld, Nigel J. Rhodes

Neutron applications are progressing rapidly, requiring detectors to meet increasingly rigorous criteria. Specifications such as high neutron counting rates, fast timing resolution and low background have a significant impact on choice of scintillator and how scintillators are evaluated. This work considers detector requirements for neutron scattering instruments that are becoming more stringent as the sources and scattering technologies continue to improve. Meanwhile, both prominent scintillators used for neutron scattering detectors, ZnS:Ag/⁶LiF and GS-glass, remain stagnant. While these scintillators have been suitable for many years, they are becoming a limiting factor for neutron scattering instruments. ZnS:Ag is inhibiting count rate capability and GS-glass is too gamma sensitive so alternatives need to be found. A brief explanation of neutron scattering, its detector requirements and how those relate to scintillator properties will be discussed. Furthermore, this work explains how standard characterization methods and reporting of scintillation properties are not entirely suitable for high count rate, low background applications like neutron scattering. As a result, modifications to characterization of gamma discrimination, light output, and decay kinetics are suggested. Additional steps are suggested including neutron activation and a more appropriate assessment of count rate capability. A non-exhaustive set of ⁶Li containing neutron sensitive scintillators including ZnS:Ag/⁶LiF, GS20 glass, ZnO:Zn/⁶LiF, Cs⁶LiYCl:Ce, ⁶LiI:Eu, ⁶LiI:Ce, ⁶LiCaAlF:Eu, LiCaAlF:Ce, transparent rubber sheet (TRUST) ⁶LiCaAlF:Eu, TRUST ⁶LiCaAlF:Eu with added fluorophore and EJ-270 (⁶Li containing plastic) are reviewed and studied from this different perspective. Finally, new scintillator developments relevant to high count rate, low background applications are discussed.

中子应用发展迅速，要求探测器满足越来越严格的标准。高中子计数率、快速定时分辨率和低本底等规格对闪烁体的选择和闪烁体的评估方式有重大影响。随着中子源和散射技术的不断改进，中子散射仪器对探测器的要求也越来越严格。与此同时，用于中子散射探测器的两种主要闪烁体--ZnS:Ag/6LiF 和 GS-玻璃--仍然停滞不前。虽然这些闪烁体已适用多年，但它们正成为中子散射仪器的限制因素。ZnS:Ag抑制了计数率能力，GS-玻璃对伽马射线过于敏感，因此需要找到替代品。本文将简要解释中子散射、其探测器要求以及这些要求与闪烁体特性的关系。此外，这项工作还将解释闪烁特性的标准鉴定方法和报告如何不完全适用于中子散射这样的高计数率、低背景应用。因此，建议修改伽马辨别、光输出和衰变动力学的表征方法。还建议采取其他步骤，包括中子活化和对计数率能力进行更适当的评估。含有 6Li 的中子敏感闪烁体包括 ZnS:Ag/6LiF、GS20 玻璃、ZnO:Zn/6LiF、Cs6LiYCl:Ce、6LiI:Eu、6LiI:Ce、6LiCaAlF:Eu、LiCaAlF：Ce、6LiCaAlF:Eu 透明橡胶板 (TRUST)、添加了荧光体的 6LiCaAlF:Eu 透明橡胶板 (TRUST)，以及 EJ-270（含 6Li 的塑料）。最后，还讨论了与高计数率、低本底应用相关的闪烁体新发展。

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引用次数: 0

Scintillation properties of multilayered composite scintillators based on the YAG:Ce and TbAG:Ce single crystalline films and GAGG:Ce crystal substrates 基于 YAG:Ce 和 TbAG:Ce 单晶薄膜以及 GAGG:Ce 晶体基底的多层复合闪烁体的闪烁特性

Q2 Engineering

Optical Materials: X

Pub Date : 2024-10-09 DOI: 10.1016/j.omx.2024.100372

Y. Syrotych , V. Gorbenko , S. Witkiewicz-Łukaszek , T. Zorenko , M. Kaczmarek , J. Pejchal , J.A. Mares , R. Kucerkova , M. Nikl , K. Kamada , A. Yoshikawa , Yu Zorenko

This work demonstrates current progress of our group in developing of two- and three-layered composite for radiation monitoring of various components of mixed ionization radiation fluxes based on the epitaxial structures of Ce³⁺ doped garnet compounds using the Liquid Phase Epitaxy growth technique. These scintillators contain one or two single crystalline films, dedicated for registration of low-penetrating particles, and bulk single crystal substrates used for detection of high-penetrating γ-rays. For creation of two- and three-layered epitaxial structures, the single crystalline films of Ce³⁺ doped Y₃Al₅O₁₂, Tb₃Al₅O₁₂ and Tb₂GdAl₅O₁₂ garnets were used. The single crystal of mixed Gd₃Ga_xAl_5-xO₁₂:Ce garnet with fixed Ga concentrations of x = 2.3 and 3.0 are utilized as substrates. To assess the scintillation properties of these epitaxial structures, the pulse height spectra, light yield and scintillation decay kinetics were measured under excitation by α–particles (²³⁹Pu), β-particles (⁹⁰Sr + ⁹⁰Y) and γ–rays (¹³⁷Cs). Finally, the figure-of merit of composite scintillators under study were calculated for selection of the best epitaxial structures for simultaneous registration α– and β-particles and γ–rays.

这项工作展示了我们研究小组目前在利用液相外延生长技术，基于掺杂 Ce3+ 的石榴石化合物的外延结构，开发用于辐射监测混合电离辐射通量各种成分的两层和三层复合材料方面取得的进展。这些闪烁体包含一个或两个单晶薄膜，专门用于登记低穿透性粒子，以及用于检测高穿透性γ射线的块状单晶基底。为了创建两层和三层外延结构，使用了掺杂 Ce3+ 的 Y3Al5O12、Tb3Al5O12 和 Tb2GdAl5O12 石榴石单晶薄膜。基底则使用了固定镓浓度为 x = 2.3 和 3.0 的混合 Gd3GaxAl5-xO12:Ce 石榴石单晶。为了评估这些外延结构的闪烁特性，测量了在α粒子（239Pu）、β粒子（90Sr + 90Y）和γ射线（137Cs）激发下的脉冲高度谱、光产率和闪烁衰减动力学。最后，计算了所研究的复合闪烁体的优越性，以选择最佳外延结构，用于同时登记 α 和 β 粒子以及 γ 射线。

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