First-principles calculation of monolayer PdSe2 with Se and Pd vacancy and its effect on quantum capacitance

K. A. Paz, A. R. Villagracia, M. Y. David
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Abstract

The emergence of 2-D materials such as graphene has caught the attention of the scientific community. 2-D materials have a higher surface area per unit mass, which is ideal for electrodes. Another popular material among researchers is the monolayer palladium diselenide or PdSe2, a semiconductor with a tunable bandgap energy. Since there are fewer states in the fermi level of PdSe2, the quantization effect is more prevalent, hence, it would most likely draw its capacitance from its electronic configuration. In this study, the electronic properties such as band structure, density of states, and quantum capacitance of pristine monolayer PdSe2, PdSe2 with Se, and Pd vacancy were calculated based on density functional theory via Quantum Espresso. The formation energies of all systems were energetically favourable. The system with Se vacancy has the highest formation energy with a value of -3.47 eV. The density of states of all systems were observed to have a local minima at the fermi level. More occupiable states around the valence band were observed for the systems with vacancy. Bader charge analysis showed a notable decrease of charge in Se atoms near the Pd vacancy, while the Pd atoms in the Se vacated system showed stronger charge transfer between Pd and another Se atom. The quantum capacitance and surface charge values were calculated using the density of states. Higher surface charge values at the negative voltage were observed for the systems with induced vacancies. Based on the results, the systems with vacancies have improved the quantum capacitance and surface charge at the negative potential.
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含有 Se 和 Pd 空位的单层 PdSe2 的第一性原理计算及其对量子电容的影响
石墨烯等二维材料的出现引起了科学界的关注。二维材料单位质量的表面积更大,是理想的电极材料。另一种受研究人员欢迎的材料是单层二硒化钯或 PdSe2,这是一种带隙能量可调的半导体。由于 PdSe2 的费米级状态较少,量子化效应更为普遍,因此它的电容很可能来自其电子构型。本研究基于密度泛函理论,通过量子 Espresso 计算了原始单层 PdSe2、含 Se 的 PdSe2 和 Pd 空位的电子特性,如带状结构、状态密度和量子电容。所有体系的形成能都是有利的。含 Se 空位的体系的形成能最高,为 -3.47 eV。据观察,所有体系的状态密度在费米级都有局部极小值。观察到存在空位的体系在价带附近有更多的可占据态。巴德尔电荷分析表明,钯空位附近的硒原子电荷明显减少,而硒空位体系中的钯原子与另一个硒原子之间的电荷转移更强。量子电容和表面电荷值是通过状态密度计算得出的。在具有诱导空位的体系中,负电压下的表面电荷值较高。根据这些结果,具有空位的体系在负电位时的量子电容和表面电荷都有所提高。
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