SiC and Si detectors comparison for high carbon energy spectrometry

L. Torrisi, V. Havránek, A. Mackova, A. Torrisi, M. Cutroneo
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Abstract

An innovative SiC Schottky junction and a traditional p-n Si surface barrier detector have been compared to detect carbon ions with MeVs kinetic energy. To this, a comparison was performed during Rutherford backscattering spectrometry (RBS) using 2–10 MeV carbon ion beams. The energy resolution and detection efficiency for RBS analysis using the two detectors and their detection electronics are presented. The detector parameters dependencies on the surface passivating layers, ion energy and current dependence, ion penetration depth, detection efficiency, energy resolution, and others are discussed. The comparison of RBS analysis with SiC and Si is investigated highlighting the advantages and disadvantages of using SiC with respect to the traditional Si surface barrier detectors. The two detectors employed for proton, helium and carbon RBS spectrometry of different targets have been also compared on the base of the literature data.
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碳化硅和硅探测器在高碳能光谱分析中的比较
对创新型碳化硅肖特基结和传统的 p-n 硅表面电阻探测器进行了比较,以探测动能为 MeVs 的碳离子。为此,在使用 2-10 MeV 碳离子束进行卢瑟福反向散射光谱分析(RBS)时进行了比较。报告介绍了使用两种探测器及其探测电子设备进行 RBS 分析的能量分辨率和探测效率。讨论了探测器参数对表面钝化层的依赖性、离子能量和电流依赖性、离子穿透深度、探测效率、能量分辨率等问题。研究了使用碳化硅和硅进行 RBS 分析的比较,突出了使用碳化硅与传统的硅表面势垒探测器相比的优缺点。根据文献数据,还比较了这两种探测器在质子、氦和碳不同目标的 RBS 光谱分析中的应用。
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