Lei Wu;Shangli Dong;Xiaodong Xu;Yadong Wei;Zhongli Liu;Weiqi Li;Jianqun Yang;Xingji Li
{"title":"Influence of Accumulated Radiation Effects on Single-Event Burnout in SiC MOSFETs","authors":"Lei Wu;Shangli Dong;Xiaodong Xu;Yadong Wei;Zhongli Liu;Weiqi Li;Jianqun Yang;Xingji Li","doi":"10.1109/TNS.2024.3429172","DOIUrl":null,"url":null,"abstract":"The accumulated radiation effects of preirradiation from different radiation sources on single-event burnout (SEB) of silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) were investigated. The displacement damage (DD) was introduced by preirradiation of silicon ions, and compared with the devices without preirradiation, it was found that it is had for SEB to occur in the devices with DD introduced after silicon ion irradiations. In contrast, for gamma ray preirradiation, it was found that SEB occurs more easily in the radiated devices by gamma ray. In addition, technology computer aided design (TCAD) is used to simulate the SEB of the devices, and the bulk defect increases the recombination rate of the devices and leads to the decrease of the current density. At the same voltage, the smaller the current density is, the lower the thermal effect will be, and SEB hardly occurs. The drain current and lattice temperature of the devices with oxide charges are higher, and SEB occurs more easily. The simulation results are reasonably consistent with the experimental results. This study provides a valuable reference for the method of SEB hardening.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nuclear Science","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10599501/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The accumulated radiation effects of preirradiation from different radiation sources on single-event burnout (SEB) of silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) were investigated. The displacement damage (DD) was introduced by preirradiation of silicon ions, and compared with the devices without preirradiation, it was found that it is had for SEB to occur in the devices with DD introduced after silicon ion irradiations. In contrast, for gamma ray preirradiation, it was found that SEB occurs more easily in the radiated devices by gamma ray. In addition, technology computer aided design (TCAD) is used to simulate the SEB of the devices, and the bulk defect increases the recombination rate of the devices and leads to the decrease of the current density. At the same voltage, the smaller the current density is, the lower the thermal effect will be, and SEB hardly occurs. The drain current and lattice temperature of the devices with oxide charges are higher, and SEB occurs more easily. The simulation results are reasonably consistent with the experimental results. This study provides a valuable reference for the method of SEB hardening.
期刊介绍:
The IEEE Transactions on Nuclear Science is a publication of the IEEE Nuclear and Plasma Sciences Society. It is viewed as the primary source of technical information in many of the areas it covers. As judged by JCR impact factor, TNS consistently ranks in the top five journals in the category of Nuclear Science & Technology. It has one of the higher immediacy indices, indicating that the information it publishes is viewed as timely, and has a relatively long citation half-life, indicating that the published information also is viewed as valuable for a number of years.
The IEEE Transactions on Nuclear Science is published bimonthly. Its scope includes all aspects of the theory and application of nuclear science and engineering. It focuses on instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.