Pub Date : 2024-11-15DOI: 10.1109/TNS.2024.3493432
{"title":"IEEE Transactions on Nuclear Science information for authors","authors":"","doi":"10.1109/TNS.2024.3493432","DOIUrl":"https://doi.org/10.1109/TNS.2024.3493432","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 11","pages":"C3-C3"},"PeriodicalIF":1.9,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10754788","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-15DOI: 10.1109/TNS.2024.3483588
Zane W. Bell
{"title":"Search for Editor-in-Chief","authors":"Zane W. Bell","doi":"10.1109/TNS.2024.3483588","DOIUrl":"https://doi.org/10.1109/TNS.2024.3483588","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 11","pages":"2338-2338"},"PeriodicalIF":1.9,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10754787","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-15DOI: 10.1109/TNS.2024.3497293
{"title":"TechRxiv: Share Your Preprint Research with the World!","authors":"","doi":"10.1109/TNS.2024.3497293","DOIUrl":"https://doi.org/10.1109/TNS.2024.3497293","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 11","pages":"2484-2484"},"PeriodicalIF":1.9,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10754785","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-18DOI: 10.1109/TNS.2024.3476050
{"title":"IEEE Transactions on Nuclear Science information for authors","authors":"","doi":"10.1109/TNS.2024.3476050","DOIUrl":"https://doi.org/10.1109/TNS.2024.3476050","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 10","pages":"C3-C3"},"PeriodicalIF":1.9,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10722902","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142450824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-18DOI: 10.1109/TNS.2024.3479589
{"title":"TechRxiv: Share Your Preprint Research with the World!","authors":"","doi":"10.1109/TNS.2024.3479589","DOIUrl":"https://doi.org/10.1109/TNS.2024.3479589","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 10","pages":"2335-2335"},"PeriodicalIF":1.9,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10723097","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142450917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-16DOI: 10.1109/TNS.2024.3481367
Leshan Qiu;Yun Bai;Zewei Dong;Jieqin Ding;Jilong Hao;Yidan Tang;Xiaoli Tian;Chengzhan Li;Xinyu Liu
The safe operating area (SOA) for the drain bias of silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) in space applications has been limited due to the single-event effects (SEEs) induced by heavy-ion irradiation. At a drain bias lower than 5% of the rated voltage, SiC MOSFETs are typically considered to be in the charge collection region, which usually does not cause destructive damage. However, in this article, the degradation induced by heavy ions at drain biases below 50 V for 1200 V SiC MOSFETs has been observed. During irradiation, the drain leakage current ( ${I} {_{text {DSS}}}$ ) continuously increased with the accumulated dose. Meanwhile, the ${I} {_{text {DSS}}}$ degradation showed a correlation between the drain bias and the cell topology of SiC MOSFETs. After irradiation, unacceptable ${I} {_{text {DSS}}}$ degradation was still observed, but it recovered by about 40% after a month of room-temperature annealing. ${I} {_{text {DSS}}}$ also returned to its preirradiation level under negative gate bias, suggesting that the increase in ${I} {_{text {DSS}}}$ could be associated with a leakage current path through the channel region, resulting from defects within the oxide or at the SiO2/SiC interface, likely introduced by the microdose effect. The gate leakage current ( ${I} {_{text {GSS}}}$ ) was tested within the temperature range of 25 °C–250 °C to investigate the temperature impact for gate oxide latent damage activation. As the drain bias increased during irradiation, ${I} {_{text {GSS}}}$ also increased significantly at higher temperatures, suggesting that latent damage within the gate oxide had been formed during irradiation.
由于重离子辐照引起的单次事件效应（SEE），碳化硅（SiC）金属氧化物半导体场效应晶体管（MOSFET）在太空应用中漏极偏置的安全工作区（SOA）一直受到限制。在漏极偏压低于额定电压的 5%时，SiC MOSFET 通常被认为处于电荷收集区，通常不会造成破坏性损坏。然而，本文观察了 1200 V SiC MOSFET 在漏极偏压低于 50 V 时由重离子引起的退化。在辐照过程中，漏极漏电流（${I} {_{text {DSS}}$ ）随着累积剂量的增加而持续增加。同时，${I} {_{text {DSS}}$ 的衰减显示出 SiC MOSFET 的漏极偏置和单元拓扑结构之间的相关性。辐照后，仍然观察到不可接受的 ${I} {_{text {DSS}}$ 退化，但经过一个月的室温退火后，退化程度恢复了约 40%。 在负栅极偏压条件下，{I} {_{text {DSS}}$ 也恢复到了辐照前的水平，这表明{I} {_{text {DSS}}$ 的增加可能与通过沟道区的漏电流路径有关，该路径由氧化物内部或 SiO2/SiC 界面上的缺陷造成，可能是由微剂量效应引入的。在 25 °C-250 °C 的温度范围内测试了栅极漏电流（${I} {_{text {GSS}}$ ），以研究温度对栅极氧化物潜伏损伤激活的影响。随着辐照过程中漏极偏压的增加，{I} {_{text {GSS}}$ 在较高温度下也显著增加，这表明栅极氧化物内部在辐照过程中形成了潜在损伤。
{"title":"Degradation Under Low Drain Bias Induced by Heavy Ion in SiC MOSFETs","authors":"Leshan Qiu;Yun Bai;Zewei Dong;Jieqin Ding;Jilong Hao;Yidan Tang;Xiaoli Tian;Chengzhan Li;Xinyu Liu","doi":"10.1109/TNS.2024.3481367","DOIUrl":"https://doi.org/10.1109/TNS.2024.3481367","url":null,"abstract":"The safe operating area (SOA) for the drain bias of silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) in space applications has been limited due to the single-event effects (SEEs) induced by heavy-ion irradiation. At a drain bias lower than 5% of the rated voltage, SiC MOSFETs are typically considered to be in the charge collection region, which usually does not cause destructive damage. However, in this article, the degradation induced by heavy ions at drain biases below 50 V for 1200 V SiC MOSFETs has been observed. During irradiation, the drain leakage current (\u0000<inline-formula> <tex-math>${I} {_{text {DSS}}}$ </tex-math></inline-formula>\u0000) continuously increased with the accumulated dose. Meanwhile, the \u0000<inline-formula> <tex-math>${I} {_{text {DSS}}}$ </tex-math></inline-formula>\u0000 degradation showed a correlation between the drain bias and the cell topology of SiC MOSFETs. After irradiation, unacceptable \u0000<inline-formula> <tex-math>${I} {_{text {DSS}}}$ </tex-math></inline-formula>\u0000 degradation was still observed, but it recovered by about 40% after a month of room-temperature annealing. \u0000<inline-formula> <tex-math>${I} {_{text {DSS}}}$ </tex-math></inline-formula>\u0000 also returned to its preirradiation level under negative gate bias, suggesting that the increase in \u0000<inline-formula> <tex-math>${I} {_{text {DSS}}}$ </tex-math></inline-formula>\u0000 could be associated with a leakage current path through the channel region, resulting from defects within the oxide or at the SiO2/SiC interface, likely introduced by the microdose effect. The gate leakage current (\u0000<inline-formula> <tex-math>${I} {_{text {GSS}}}$ </tex-math></inline-formula>\u0000) was tested within the temperature range of 25 °C–250 °C to investigate the temperature impact for gate oxide latent damage activation. As the drain bias increased during irradiation, \u0000<inline-formula> <tex-math>${I} {_{text {GSS}}}$ </tex-math></inline-formula>\u0000 also increased significantly at higher temperatures, suggesting that latent damage within the gate oxide had been formed during irradiation.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 11","pages":"2377-2385"},"PeriodicalIF":1.9,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-14DOI: 10.1109/TNS.2024.3479201
Tao Liu;Rongyao Ma;Shaohong Li;Jingyu Tao;Zhiyu Wang;Hao Wu;Yiren Yu;Zijun Cheng;Shengdong Hu
Threshold voltage ( $V_{text {TH}}$ ) degradation mechanisms induced by the ionizing irradiation for the 1200-V double-trench (DT) silicon-carbide (SiC) metal-oxide semiconductor field-effect transistor (MOSFET) are investigated. The ionizing irradiation experiment is performed with different gate-source voltages ( $V_{text {GS}}$ ) and total ionizing doses (TIDs). The maximum $V_{text {TH}}$ shifts are −1.92 V for a $V_{text {GS}}$ of 0 V and a TID of 500 krad(Si), and −4.73 V for a $V_{text {GS}}$ of 20 V and a TID of 150 krad(Si), respectively. A novel method of investigation on TID-induced $V_{text {TH}}$ shift from energy domain and numerical simulation with the aid of the TCAD tool is exploited. Extensive simulations indicate that donor-like oxide traps with energy larger than 0.55 eV dominate the negative $V_{text {TH}}$ shift. The summation of two Gaussian distribution models is used to emulate trapped hole energy distribution, and the relative errors between measured and simulated $V_{text {TH}}$ shifts are within ±13.36% at a TID of 100 krad(Si).
研究了 1200 V 双沟槽（DT）碳化硅（SiC）金属氧化物半导体场效应晶体管（MOSFET）在电离辐照诱导下的阈值电压（$V_{text {TH}}$ ）衰减机制。电离辐照实验是在不同的栅源电压（$V_{text {GS}}$）和总电离剂量（TIDs）下进行的。当 $V_{text {GS}$ 为 0 V 和 TID 为 500 krad(Si) 时，最大 $V_{text {TH}}$ 漂移为-1.92 V；当 $V_{text {GS}$ 为 20 V 和 TID 为 150 krad(Si) 时，最大 $V_{text {TH}}$ 漂移为-4.73 V。在 TCAD 工具的帮助下，利用一种新方法从能域和数值模拟方面研究了 TID 引起的 $V_{text {TH}}$ 漂移。大量的模拟结果表明，能量大于 0.55 eV 的供体类氧化物陷阱主导了 $V_{text {TH}}$ 的负偏移。在 100 krad(Si) 的 TID 条件下，测量值与模拟值之间的相对误差在 ±13.36% 以内。
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