Pub Date : 2025-02-17DOI: 10.1109/TNS.2025.3539562
{"title":"IEEE Transactions on Nuclear Science information for authors","authors":"","doi":"10.1109/TNS.2025.3539562","DOIUrl":"https://doi.org/10.1109/TNS.2025.3539562","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 2","pages":"C3-C3"},"PeriodicalIF":1.9,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10891363","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-23DOI: 10.1109/TNS.2025.3533397
{"title":"2024 Index IEEE Transactions on Nuclear Science Vol. 71","authors":"","doi":"10.1109/TNS.2025.3533397","DOIUrl":"https://doi.org/10.1109/TNS.2025.3533397","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 12","pages":"1-68"},"PeriodicalIF":1.9,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10851449","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-20DOI: 10.1109/TNS.2024.3513632
Zane W. Bell
{"title":"Announcing the New Senior Editor for Nuclear Power Instrumentation and Control","authors":"Zane W. Bell","doi":"10.1109/TNS.2024.3513632","DOIUrl":"https://doi.org/10.1109/TNS.2024.3513632","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 1","pages":"2-2"},"PeriodicalIF":1.9,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10846961","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142992834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-20DOI: 10.1109/TNS.2025.3528697
Zane W. Bell
{"title":"Search for Editor-in-Chief","authors":"Zane W. Bell","doi":"10.1109/TNS.2025.3528697","DOIUrl":"https://doi.org/10.1109/TNS.2025.3528697","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 1","pages":"1-1"},"PeriodicalIF":1.9,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10846960","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142992833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-20DOI: 10.1109/TNS.2024.3525438
{"title":"IEEE Transactions on Nuclear Science information for authors","authors":"","doi":"10.1109/TNS.2024.3525438","DOIUrl":"https://doi.org/10.1109/TNS.2024.3525438","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 1","pages":"C3-C3"},"PeriodicalIF":1.9,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10847059","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142992910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Single-event functional interrupts (SEFIs) in microprocessors (MPUs) due to high-energy space radiation have important implications for the reliability and safety of spaceborne systems. To study the system-level SEFI of the commercially available MPC750 MPU, which has promising aerospace applications, a large-size hybrid mapping method was established based on a high-energy heavy-ion microbeam platform. SEFI-sensitive areas across the centimeter-size die were then mapped using the krypton ion microbeam in conjunction with the decrypted device layout. Additionally, detailed SEFI cross sections, generation conditions, and propagation mechanisms were analyzed, highlighting the significance of the exception model in SEFI generation and mitigation. This investigation provides valuable insights into radiation reliability and radiation-hardening design for the MPC750 and Harvard Architecture MPUs in space applications.
{"title":"Single-Event Functional Interrupt Mapping of cm-Size Microprocessor Using Ion Microbeam","authors":"Jinlong Guo;Wenbo Tian;Guangbo Mao;Hongjun You;Can Zhao;Ruqun Wu;Wenjing Liu;Cheng Shen;Hongjin Mou;Lei Zhang;Guanghua Du","doi":"10.1109/TNS.2025.3530568","DOIUrl":"https://doi.org/10.1109/TNS.2025.3530568","url":null,"abstract":"Single-event functional interrupts (SEFIs) in microprocessors (MPUs) due to high-energy space radiation have important implications for the reliability and safety of spaceborne systems. To study the system-level SEFI of the commercially available MPC750 MPU, which has promising aerospace applications, a large-size hybrid mapping method was established based on a high-energy heavy-ion microbeam platform. SEFI-sensitive areas across the centimeter-size die were then mapped using the krypton ion microbeam in conjunction with the decrypted device layout. Additionally, detailed SEFI cross sections, generation conditions, and propagation mechanisms were analyzed, highlighting the significance of the exception model in SEFI generation and mitigation. This investigation provides valuable insights into radiation reliability and radiation-hardening design for the MPC750 and Harvard Architecture MPUs in space applications.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 2","pages":"125-132"},"PeriodicalIF":1.9,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Semi-insulating (SI) gallium arsenide (GaAs) alpha detectors with anode GaAs P+ contact layer were fabricated and characterized. The contact layer growth was carried out by metal-organic chemical vapor deposition (MOCVD) and the detector performances were compared to the performances of a front Schottky contact detector. The front-side Schottky contact suffers from electron injection into the GaAs substrate. This injection is eliminated by using a P+ anode blocking layer with an ohmic contact, resulting in a reduction of leakage current at reverse bias values of up to 70 V. For example, at 30 V, the leakage currents were 50 and 150 nA/cm2 for the ohmic and the Schottky anode detectors, respectively. For both detectors, the charge collection efficiency (CCE) was increased by a factor of ~2 after grinding the substrates from 650- to 310-$mu $ m thickness, with no leakage current degradation. In addition, rapid thermal process (RTP) annealing of the bottom N contact reduced the leakage current only for the Schottky detector, while improving the forward bias characteristics for both ohmic and Schottky detectors, as expected.
{"title":"Characterization of p-i-n Particle Detectors Based on Semi-Insulating GaAs With an MOCVD-Grown P+ GaAs Anode Contact Layer","authors":"O. Sabag;E. Evenstein;G. Atar;M. Bin-Nun;M. Alefe;D. Memram;R. Tamari;S. Primo;S. Zoran;L. Hovalshvili;D. Cohen-Elias;T. Lewi","doi":"10.1109/TNS.2025.3528622","DOIUrl":"https://doi.org/10.1109/TNS.2025.3528622","url":null,"abstract":"Semi-insulating (SI) gallium arsenide (GaAs) alpha detectors with anode GaAs P+ contact layer were fabricated and characterized. The contact layer growth was carried out by metal-organic chemical vapor deposition (MOCVD) and the detector performances were compared to the performances of a front Schottky contact detector. The front-side Schottky contact suffers from electron injection into the GaAs substrate. This injection is eliminated by using a P+ anode blocking layer with an ohmic contact, resulting in a reduction of leakage current at reverse bias values of up to 70 V. For example, at 30 V, the leakage currents were 50 and 150 nA/cm2 for the ohmic and the Schottky anode detectors, respectively. For both detectors, the charge collection efficiency (CCE) was increased by a factor of ~2 after grinding the substrates from 650- to 310-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m thickness, with no leakage current degradation. In addition, rapid thermal process (RTP) annealing of the bottom N contact reduced the leakage current only for the Schottky detector, while improving the forward bias characteristics for both ohmic and Schottky detectors, as expected.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 2","pages":"184-188"},"PeriodicalIF":1.9,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-13DOI: 10.1109/TNS.2025.3529188
Hao Jiang;Xiaodong Xu;Xueqiang Yu;Xiangjie Cao;Tao Ying;Jianqun Yang;Peijian Zhang;Xingji Li
In this article, a combined approach of experimentation and simulation is adopted to study the effects of radiation-induced defects on the electrical properties of GaN high-electron-mobility transistors (HEMTs) under 6-MeV chlorine ion irradiation. Through electrical performance and current deep-level transient spectroscopy (I-DLTS) testing, the evolution of defect from ${V} _{text {N}}$ –${V} _{text {N}}$ (+1/+2) and FeGa to FeGa–${V} _{text {N}}$ is observed with increasing irradiation fluence. When the fluence exceeds $5times 10^{10}$ ions/cm2, the concentration of FeGa–${V} _{text {N}}$ defects reaches saturation due to the limitation of the FeGa concentration, which is reflected in the changes to the peak ${G} _{M}$ . The FeGa–${V} _{text {N}}$ defect is confirmed as a primary factor contributing to electrical degradation in the 2-D electron gas (2DEG) conductivity of the GaN-HEMTs.
{"title":"The Impact of Radiation-Induced FeGa– VN Defects on the Electrical Performance of AlGaN/GaN HEMTs","authors":"Hao Jiang;Xiaodong Xu;Xueqiang Yu;Xiangjie Cao;Tao Ying;Jianqun Yang;Peijian Zhang;Xingji Li","doi":"10.1109/TNS.2025.3529188","DOIUrl":"https://doi.org/10.1109/TNS.2025.3529188","url":null,"abstract":"In this article, a combined approach of experimentation and simulation is adopted to study the effects of radiation-induced defects on the electrical properties of GaN high-electron-mobility transistors (HEMTs) under 6-MeV chlorine ion irradiation. Through electrical performance and current deep-level transient spectroscopy (I-DLTS) testing, the evolution of defect from <inline-formula> <tex-math>${V} _{text {N}}$ </tex-math></inline-formula>–<inline-formula> <tex-math>${V} _{text {N}}$ </tex-math></inline-formula> (+1/+2) and FeGa to FeGa–<inline-formula> <tex-math>${V} _{text {N}}$ </tex-math></inline-formula> is observed with increasing irradiation fluence. When the fluence exceeds <inline-formula> <tex-math>$5times 10^{10}$ </tex-math></inline-formula> ions/cm2, the concentration of FeGa–<inline-formula> <tex-math>${V} _{text {N}}$ </tex-math></inline-formula> defects reaches saturation due to the limitation of the FeGa concentration, which is reflected in the changes to the peak <inline-formula> <tex-math>${G} _{M}$ </tex-math></inline-formula>. The FeGa–<inline-formula> <tex-math>${V} _{text {N}}$ </tex-math></inline-formula> defect is confirmed as a primary factor contributing to electrical degradation in the 2-D electron gas (2DEG) conductivity of the GaN-HEMTs.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 2","pages":"118-124"},"PeriodicalIF":1.9,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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