{"title":"Single-Event Effect Responses of CMOS Integrated Planar Multiturn Inductors in LC-Tank Oscillators Under Heavy-Ion Microbeam Irradiation","authors":"Gideon Adom-Bamfi;Stefan Biereigel;Paul Leroux;Jeffrey Prinzie","doi":"10.1109/TNS.2024.3414841","DOIUrl":null,"url":null,"abstract":"This article presents detailed measurements of a novel radiation effect caused by the sensitivity of on-chip spiral inductors to ionizing particles, leading to single-event frequency transients (SEFTs) in \n<italic>LC</i>\n-tank oscillators. Quantitative experimental results from heavy-ion microbeam irradiation of two-turn and four-turn inductor samples are presented. The findings reveal a homogeneous sensitivity pattern within the perimeter of the inductor coil, with sensitivity decreasing further away from the coil. Moreover, the results demonstrate an increase in sensitivity with frequency. The circuits were fabricated using a 65-nm complementary metal—oxide semiconductor (CMOS) technology.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nuclear Science","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10557643/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This article presents detailed measurements of a novel radiation effect caused by the sensitivity of on-chip spiral inductors to ionizing particles, leading to single-event frequency transients (SEFTs) in
LC
-tank oscillators. Quantitative experimental results from heavy-ion microbeam irradiation of two-turn and four-turn inductor samples are presented. The findings reveal a homogeneous sensitivity pattern within the perimeter of the inductor coil, with sensitivity decreasing further away from the coil. Moreover, the results demonstrate an increase in sensitivity with frequency. The circuits were fabricated using a 65-nm complementary metal—oxide semiconductor (CMOS) technology.
期刊介绍:
The IEEE Transactions on Nuclear Science is a publication of the IEEE Nuclear and Plasma Sciences Society. It is viewed as the primary source of technical information in many of the areas it covers. As judged by JCR impact factor, TNS consistently ranks in the top five journals in the category of Nuclear Science & Technology. It has one of the higher immediacy indices, indicating that the information it publishes is viewed as timely, and has a relatively long citation half-life, indicating that the published information also is viewed as valuable for a number of years.
The IEEE Transactions on Nuclear Science is published bimonthly. Its scope includes all aspects of the theory and application of nuclear science and engineering. It focuses on instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.