{"title":"Generalization of interfacial thermal conductance based on interfacial phonon localization","authors":"Ibrahim Al Keyyam, Xinwei Wang","doi":"10.1016/j.mtphys.2024.101516","DOIUrl":null,"url":null,"abstract":"<div><p>Interfacial energy transport is of great engineering and scientific importance. Traditional theoretical treatment based on phonon reflection and transmission only provides qualitative understanding of the interfacial thermal conductance (<em>G</em>). In the interface region, the material has gradual (covalent) or abrupt (van de Waals) physical structure transition, each transition features interface-region atomic interactions that are different from those of both adjoining sides. This difference makes the interface-region phonons extremely localized. Here, by constructing an “equivalent interfacial medium” (EIM) that accounts for the extremely localized phonon region, <em>G</em> can be described by a universal physical model that is characterized by an “interface characteristic temperature” (<span><math><msub><mi>Θ</mi><mrow><mi>i</mi><mi>n</mi><mi>t</mi></mrow></msub></math></span>) and energy carrier transfer time. The EIM model fits widely reported <em>G</em> ∼ <em>T</em> (<em>T</em>: temperature) data with high accuracy and provides remarkable prediction of <em>G</em> at different temperatures based on 2–3 experimental data points. Under normalized temperature (<em>T</em>/<span><math><msub><mi>Θ</mi><mrow><mi>i</mi><mi>n</mi><mi>t</mi></mrow></msub></math></span><em>)</em> and interfacial thermal conductance (<em>G</em>/<em>G</em><sub>max</sub>), all literature data of <em>G</em> can be universally grouped to a single curve. The EIM model provides a solid correlation between <em>G</em> and interfacial structure and is expected to significantly advance the physical understanding and design of interfacial energy transport toward high-efficiency energy conversion, transport, and micro/nanoelectronics.</p></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":null,"pages":null},"PeriodicalIF":10.0000,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Today Physics","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2542529324001925","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Interfacial energy transport is of great engineering and scientific importance. Traditional theoretical treatment based on phonon reflection and transmission only provides qualitative understanding of the interfacial thermal conductance (G). In the interface region, the material has gradual (covalent) or abrupt (van de Waals) physical structure transition, each transition features interface-region atomic interactions that are different from those of both adjoining sides. This difference makes the interface-region phonons extremely localized. Here, by constructing an “equivalent interfacial medium” (EIM) that accounts for the extremely localized phonon region, G can be described by a universal physical model that is characterized by an “interface characteristic temperature” () and energy carrier transfer time. The EIM model fits widely reported G ∼ T (T: temperature) data with high accuracy and provides remarkable prediction of G at different temperatures based on 2–3 experimental data points. Under normalized temperature (T/) and interfacial thermal conductance (G/Gmax), all literature data of G can be universally grouped to a single curve. The EIM model provides a solid correlation between G and interfacial structure and is expected to significantly advance the physical understanding and design of interfacial energy transport toward high-efficiency energy conversion, transport, and micro/nanoelectronics.
界面能量传输具有重要的工程和科学意义。传统的基于声子反射和透射的理论处理方法只能定性地理解界面热导(G)。在界面区域,材料具有渐变(共价)或突变(范德华)的物理结构转变,每种转变都具有不同于相邻两侧的界面区域原子相互作用。这种差异使得界面区声子极为局部化。在这里,通过构建一个 "等效界面介质"(EIM)来解释极度局部化的声子区域,就可以用一个通用物理模型来描述 G,该模型的特征是 "界面特征温度"(Θint)和能量载流子转移时间。EIM 模型高度精确地拟合了广泛报道的 G ∼ T(T:温度)数据,并根据 2-3 个实验数据点对不同温度下的 G 进行了出色的预测。在归一化温度(T/Θint)和界面热导率(G/Gmax)条件下,所有文献中的 G 数据均可归纳为一条曲线。EIM 模型提供了 G 与界面结构之间的可靠相关性,有望极大地促进对界面能量传输的物理理解和设计,从而实现高效的能量转换、传输和微/纳米电子学。
期刊介绍:
Materials Today Physics is a multi-disciplinary journal focused on the physics of materials, encompassing both the physical properties and materials synthesis. Operating at the interface of physics and materials science, this journal covers one of the largest and most dynamic fields within physical science. The forefront research in materials physics is driving advancements in new materials, uncovering new physics, and fostering novel applications at an unprecedented pace.