Influence of Critical Working Conditions on Stability of Varistor Characteristics

IF 2.5 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Device and Materials Reliability Pub Date : 2024-07-17 DOI:10.1109/TDMR.2024.3430033
Alija Jusić
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Abstract

In this paper, the results of the analysis of the influence of critical working conditions on stability of varistor characteristics are presented. Moreover, the paper offers both experimental and theoretical interpretation concerning the influence of temperature, operations’ time-number and the effect of neutron and gamma radiation on the stability of varistor characteristics. For the purpose of this paper an original measuring system of extremely low measurement uncertainty has been developed. Recording of volt-ampere, volt-ohm characteristics as well as varistor, breakdown voltage which was directly measured by a measuring system developed for that purpose, was carried out in the manner based on utilizing a single current pulse. Having analyzed the obtained results, it can be concluded that, when designing the insulation coordination at low or high voltage level, ambient environmental conditions (temperature variation) and functional aging in synergy with natural aging should be taken into account.
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临界工作条件对变阻器特性稳定性的影响
本文介绍了临界工作条件对压敏电阻特性稳定性影响的分析结果。此外,本文还就温度、操作时间数以及中子和伽马辐射对变阻器特性稳定性的影响提供了实验和理论解释。为此,本文开发了一种测量不确定性极低的独创测量系统。电压-安培、电压-欧姆特性以及压敏电阻击穿电压的记录是通过为此目的开发的测量系统直接测量的,采用的方式是利用单个电流脉冲。通过对所得结果的分析,可以得出结论:在设计低压或高压绝缘协调时,应考虑环境条件(温度变化)和功能老化与自然老化的协同作用。
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来源期刊
IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability 工程技术-工程:电子与电气
CiteScore
4.80
自引率
5.00%
发文量
71
审稿时长
6-12 weeks
期刊介绍: The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
期刊最新文献
Table of Contents IEEE Transactions on Device and Materials Reliability Publication Information IEEE Transactions on Device and Materials Reliability Information for Authors Correction to “Universal Dielectric Breakdown Modeling Under Off-State TDDB for Ultra-Scaled Device From 130 nm to 28 nm Nodes and Beyond” Blank Page
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