Influence of Critical Working Conditions on Stability of Varistor Characteristics

IF 2.5 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Device and Materials Reliability Pub Date : 2024-07-17 DOI:10.1109/TDMR.2024.3430033
Alija Jusić
{"title":"Influence of Critical Working Conditions on Stability of Varistor Characteristics","authors":"Alija Jusić","doi":"10.1109/TDMR.2024.3430033","DOIUrl":null,"url":null,"abstract":"In this paper, the results of the analysis of the influence of critical working conditions on stability of varistor characteristics are presented. Moreover, the paper offers both experimental and theoretical interpretation concerning the influence of temperature, operations’ time-number and the effect of neutron and gamma radiation on the stability of varistor characteristics. For the purpose of this paper an original measuring system of extremely low measurement uncertainty has been developed. Recording of volt-ampere, volt-ohm characteristics as well as varistor, breakdown voltage which was directly measured by a measuring system developed for that purpose, was carried out in the manner based on utilizing a single current pulse. Having analyzed the obtained results, it can be concluded that, when designing the insulation coordination at low or high voltage level, ambient environmental conditions (temperature variation) and functional aging in synergy with natural aging should be taken into account.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"24 3","pages":"448-455"},"PeriodicalIF":2.5000,"publicationDate":"2024-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Device and Materials Reliability","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10601181/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

In this paper, the results of the analysis of the influence of critical working conditions on stability of varistor characteristics are presented. Moreover, the paper offers both experimental and theoretical interpretation concerning the influence of temperature, operations’ time-number and the effect of neutron and gamma radiation on the stability of varistor characteristics. For the purpose of this paper an original measuring system of extremely low measurement uncertainty has been developed. Recording of volt-ampere, volt-ohm characteristics as well as varistor, breakdown voltage which was directly measured by a measuring system developed for that purpose, was carried out in the manner based on utilizing a single current pulse. Having analyzed the obtained results, it can be concluded that, when designing the insulation coordination at low or high voltage level, ambient environmental conditions (temperature variation) and functional aging in synergy with natural aging should be taken into account.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
临界工作条件对变阻器特性稳定性的影响
本文介绍了临界工作条件对压敏电阻特性稳定性影响的分析结果。此外,本文还就温度、操作时间数以及中子和伽马辐射对变阻器特性稳定性的影响提供了实验和理论解释。为此,本文开发了一种测量不确定性极低的独创测量系统。电压-安培、电压-欧姆特性以及压敏电阻击穿电压的记录是通过为此目的开发的测量系统直接测量的,采用的方式是利用单个电流脉冲。通过对所得结果的分析,可以得出结论:在设计低压或高压绝缘协调时,应考虑环境条件(温度变化)和功能老化与自然老化的协同作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability 工程技术-工程:电子与电气
CiteScore
4.80
自引率
5.00%
发文量
71
审稿时长
6-12 weeks
期刊介绍: The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
期刊最新文献
Bound-Constrained Expectation Maximization for Weibull Competing-Risks Device Reliability Reliability Analysis of GaAs-PIN Limiter Under Ultra-Wideband Pulse Radiation Research of Single-Event Burnout in P-NiO/n-Ga2O3 Heterojunction Diode Table of Contents IEEE Transactions on Device and Materials Reliability Publication Information
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1