First-order structural phase transition at low temperature in GaPt5P and its rapid enhancement with pressure

IF 3.7 2区 物理与天体物理 Q1 Physics and Astronomy Physical Review B Pub Date : 2024-07-25 DOI:10.1103/physrevb.110.024112
A. Sapkota, T. J. Slade, S. Huyan, N. K. Nepal, J. M. Wilde, N. Furukawa, S. H. Lapidus, L.-L. Wang, S. L. Bud'ko, P. C. Canfield
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Abstract

Single crystals of XPt5P (X = Al, Ga, and In), belonging to the 1-5-1 family of compounds, were grown from a Pt-P solution at high temperatures, and measurements of the ambient pressure, temperature-dependent magnetization, resistivity, and x-ray diffraction were made. Additionally, the ambient-pressure Hall resistivity and temperature-dependent resistance under pressure were measured on GaPt5P. All three compounds have a tetragonal P4/mmm crystal structure at room temperature with metallic transport and weak diamagnetism over the 2–300 K temperature range. Surprisingly, at ambient pressure, both the transport and magnetization measurements on GaPt5P show a steplike feature in the 70–90 K region, suggesting a possible structural phase transition. Neither AlPt5P nor InPt5P have any signatures of a phase transition in their temperature-dependent electrical resistance and magnetization data. Both the hysteretic nature and sharpness of the features in the GaPt5P data suggest that the transition is first-order. Single-crystal x-ray diffraction measurements provided further details of the structural transition with a possibility of a crystal symmetry different from P4/mmm below the transition temperature. The transition is characterized by anisotropic changes in the lattice parameters and a volume collapse with respect to the high-temperature tetragonal crystal structure. Furthermore, satellite peaks are observed at two distinct and nonequivalent wave vectors (0, 0, 0.5) and (0.5, 0.5, 0.5), and density functional theory calculations present phonon softening, especially at (0.5, 0.5, 0.5), as a possible driving mechanism. Additionally, we find that the structural transition temperature increases rapidly with increasing pressure, reaching room temperature by 2.2 GPa, highlighting the high degree of pressure sensitivity of GaPt5P and fragile nature of its room-temperature structure. Even though the volume collapse and extreme pressure sensitivity suggest chemical pressure should drive a similar structural change in AlPt5P, where both unit-cell dimensions and volume are smaller, its structure is found to be the same as that of the room-temperature GaPt5P. Overall, GaPt5P stands out as a sole member of the 1-5-1 family of compounds for which a temperature-driven structural change has been observed.

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GaPt5P 低温下的一阶结构相变及其随压力的快速增强
属于 1-5-1 族化合物的 XPt5P(X = Al、Ga 和 In)单晶是在高温下从铂-铂溶液中生长出来的,并对其环境压力、随温度变化的磁化率、电阻率和 X 射线衍射进行了测量。此外,还测量了 GaPt5P 的常压霍尔电阻率和随温度变化的耐压电阻。这三种化合物在室温下都具有四方 P4/mmm 晶体结构,在 2-300 K 温度范围内具有金属传输和弱二磁性。令人惊讶的是,在环境压力下,GaPt5P 的传输和磁化测量结果在 70-90 K 区域显示出阶梯状特征,表明可能存在结构相变。AlPt5P 和 InPt5P 随温度变化的电阻和磁化数据都没有任何相变特征。GaPt5P 数据的滞后性和特征的尖锐性都表明这种转变是一阶的。单晶 X 射线衍射测量提供了结构转变的更多细节,表明在转变温度以下可能存在不同于 P4/mmm 的晶体对称性。这种转变的特征是晶格参数的各向异性变化和相对于高温四方晶体结构的体积塌缩。此外,在两个不同的非等效波矢(0, 0, 0.5)和(0.5, 0.5, 0.5)处观察到卫星峰,密度泛函理论计算表明声子软化,尤其是在(0.5, 0.5, 0.5)处,可能是一种驱动机制。此外,我们发现结构转变温度随着压力的增加而迅速升高,在 ∼2.2 GPa 时达到室温,凸显了 GaPt5P 对压力的高度敏感性及其室温结构的脆弱性。尽管 AlPt5P 的体积塌缩和极高的压力敏感性表明化学压力应该会驱动其发生类似的结构变化,而 AlPt5P 的单元尺寸和体积都较小,但其结构却与室温下的 GaPt5P 相同。总之,GaPt5P 是 1-5-1 族化合物中唯一观察到温度驱动结构变化的成员。
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来源期刊
Physical Review B
Physical Review B 物理-物理:凝聚态物理
CiteScore
6.70
自引率
32.40%
发文量
0
审稿时长
3.0 months
期刊介绍: Physical Review B (PRB) is the world’s largest dedicated physics journal, publishing approximately 100 new, high-quality papers each week. The most highly cited journal in condensed matter physics, PRB provides outstanding depth and breadth of coverage, combined with unrivaled context and background for ongoing research by scientists worldwide. PRB covers the full range of condensed matter, materials physics, and related subfields, including: -Structure and phase transitions -Ferroelectrics and multiferroics -Disordered systems and alloys -Magnetism -Superconductivity -Electronic structure, photonics, and metamaterials -Semiconductors and mesoscopic systems -Surfaces, nanoscience, and two-dimensional materials -Topological states of matter
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