Electric Field Regulation of DC-GIS Spacer by Surface Conductivity Gradient Coatings Under Variable Temperature Gradients

IF 3.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Dielectrics and Electrical Insulation Pub Date : 2024-07-22 DOI:10.1109/TDEI.2024.3432100
Hang Yao;Boxue Du;Hucheng Liang;Liucheng Hao;Yaxiang Wang
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Abstract

The bulk conductivity of the direct current (dc)-gas-insulated switchgear (GIS) spacer increases with temperature, resulting in varying electric field (E-field) distributions across different temperature gradients. In this study, spacers coated with surface conductivity functionally graded materials ( $\sigma $ -SFGMs) are designed and fabricated. The $\sigma $ -SFGM coatings maintain constant conductivity but feature different thickness profiles on recessed and bulging surfaces. Specifically, the coating thickness exhibits a U-shaped distribution on the bulging surface and a decreasing distribution on the recessed surface. Compared to the uniform sample, the maximum E-field strength of the $\sigma $ -SFGM spacer is reduced by 46.2% and 40.2% at ambient temperature and under a temperature difference of 40 ° C, respectively. The dc flashover voltages of the $\sigma $ -SFGM spacer show an improvement ranging from 10.5% to 20.8% under variable temperature gradients.
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不同温度梯度下通过表面电导率梯度涂层调节直流-地理信息系统垫片的电场
直流(dc)气体绝缘开关设备(GIS)间隔片的体积电导率随温度升高而增加,从而导致不同温度梯度下的电场(E-field)分布变化。在本研究中,设计和制造了表面导电功能梯度材料($\sigma $ -SFGMs)涂层的间隔片。$\sigma $ -SFGM涂层保持恒定的导电性,但在凹陷表面和凸起表面具有不同的厚度分布。其中,鼓形表面涂层厚度呈u型分布,凹形表面涂层厚度呈递减分布。与均匀样品相比,$\sigma $ -SFGM间隔片在室温和温差为40℃时的最大电场强度分别降低了46.2%和40.2%。在变温度梯度下,sfgm的直流闪速电压提高了10.5% ~ 20.8%。
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来源期刊
IEEE Transactions on Dielectrics and Electrical Insulation
IEEE Transactions on Dielectrics and Electrical Insulation 工程技术-工程:电子与电气
CiteScore
6.00
自引率
22.60%
发文量
309
审稿时长
5.2 months
期刊介绍: Topics that are concerned with dielectric phenomena and measurements, with development and characterization of gaseous, vacuum, liquid and solid electrical insulating materials and systems; and with utilization of these materials in circuits and systems under condition of use.
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