{"title":"Impact of Carbon Nanotube (CNT) Based Transport Layer for Electrons on Metal-Doped Lead-Free Double Perovskite Solar Cell","authors":"Snehal Mondal;Souradeep De;Parthasarathi Chakrabarti;Santanu Maity","doi":"10.1109/JPHOTOV.2024.3424844","DOIUrl":null,"url":null,"abstract":"This research explores numerical modeling and simulation studies of a lead-free perovskite solar cell employing (Cs2AgBi0.75Sb0.25Br6) as the absorber layer and utilizing single-walled carbon nanotubes (SWCNTs) in conjunction with metal oxides as the electron transport layer (ETL). Systematic investigation with six different carrier transport layers (both ETL and hole transport layer) along with comprehensive exploration of device physics, coupled with diverse optimization strategies concerning thickness, bandgap, and defect density (both interfacial and bulk), has been carried out. Our study reveals that the proposed configuration can achieve a remarkable device performance, approaching 29.06% efficiency with a current density of 35 mA/cm\n<sup>2</sup>\n. This achievement stands in close proximity to the Shockley–Queisser limit. It has been observed that SWCNT, with a 1.4 eV bandgap, enables favorable band alignment, extracting charge carriers efficiently and yielding an impressive 1.102 V open-circuit voltage. This work is poised to catalyze further experimental research, providing valuable insights for advancing perovskite solar cell technology.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"14 5","pages":"765-776"},"PeriodicalIF":2.5000,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Photovoltaics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10605889/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENERGY & FUELS","Score":null,"Total":0}
引用次数: 0
Abstract
This research explores numerical modeling and simulation studies of a lead-free perovskite solar cell employing (Cs2AgBi0.75Sb0.25Br6) as the absorber layer and utilizing single-walled carbon nanotubes (SWCNTs) in conjunction with metal oxides as the electron transport layer (ETL). Systematic investigation with six different carrier transport layers (both ETL and hole transport layer) along with comprehensive exploration of device physics, coupled with diverse optimization strategies concerning thickness, bandgap, and defect density (both interfacial and bulk), has been carried out. Our study reveals that the proposed configuration can achieve a remarkable device performance, approaching 29.06% efficiency with a current density of 35 mA/cm
2
. This achievement stands in close proximity to the Shockley–Queisser limit. It has been observed that SWCNT, with a 1.4 eV bandgap, enables favorable band alignment, extracting charge carriers efficiently and yielding an impressive 1.102 V open-circuit voltage. This work is poised to catalyze further experimental research, providing valuable insights for advancing perovskite solar cell technology.
期刊介绍：
The IEEE Journal of Photovoltaics is a peer-reviewed, archival publication reporting original and significant research results that advance the field of photovoltaics (PV). The PV field is diverse in its science base ranging from semiconductor and PV device physics to optics and the materials sciences. The journal publishes articles that connect this science base to PV science and technology. The intent is to publish original research results that are of primary interest to the photovoltaic specialist. The scope of the IEEE J. Photovoltaics incorporates: fundamentals and new concepts of PV conversion, including those based on nanostructured materials, low-dimensional physics, multiple charge generation, up/down converters, thermophotovoltaics, hot-carrier effects, plasmonics, metamorphic materials, luminescent concentrators, and rectennas; Si-based PV, including new cell designs, crystalline and non-crystalline Si, passivation, characterization and Si crystal growth; polycrystalline, amorphous and crystalline thin-film solar cell materials, including PV structures and solar cells based on II-VI, chalcopyrite, Si and other thin film absorbers; III-V PV materials, heterostructures, multijunction devices and concentrator PV; optics for light trapping, reflection control and concentration; organic PV including polymer, hybrid and dye sensitized solar cells; space PV including cell materials and PV devices, defects and reliability, environmental effects and protective materials; PV modeling and characterization methods; and other aspects of PV, including modules, power conditioning, inverters, balance-of-systems components, monitoring, analyses and simulations, and supporting PV module standards and measurements. Tutorial and review papers on these subjects are also published and occasionally special issues are published to treat particular areas in more depth and breadth.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
