Pub Date : 2023-08-29DOI: 10.1109/JPHOTOV.2023.3307333
{"title":"IEEE Journal of Photovoltaics Information for Authors","authors":"","doi":"10.1109/JPHOTOV.2023.3307333","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2023.3307333","url":null,"abstract":"","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"13 5","pages":"C3-C3"},"PeriodicalIF":3.0,"publicationDate":"2023-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/5503869/10234139/10234117.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3515142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-08-29DOI: 10.1109/JPHOTOV.2023.3308709
{"title":"IEEE Open Access Publishing","authors":"","doi":"10.1109/JPHOTOV.2023.3308709","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2023.3308709","url":null,"abstract":"","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"13 5","pages":"764-764"},"PeriodicalIF":3.0,"publicationDate":"2023-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/5503869/10234139/10234120.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3505289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This article reports on the reduction of indium consumption in bifacial rear emitter n-type silicon heterojunction (SHJ) solar cells by substituting the transparent conducting oxide (TCO) indium tin oxide (ITO) with aluminum doped zinc oxide (AZO). AZO, ITO, and stacks of both TCOs are sputtered at room temperature and 170 °C on both sides of SHJ solar cells and glass samples. The short circuit current density ( JSC ) of AZO SHJ cells is lower than that of ITO-based cells, possibly due to a smaller optical band gap E G = 3.35 eV of AZO in contrast to EG = 3.71 eV for ITO, which could lead to stronger parasitic blue absorption for AZO cells. Series resistance R S of pure AZO SHJ solar cells is high mainly due to high contact resistance R C between silver (Ag) metallization and AZO and high R C between amorphous silicon (a-Si) and the transparent AZO with low electron density n e . Using ITO a-Si -AZO-ITO Ag stacks, which saves about 50% of ITO, enables RS values comparable to the ITO reference group, resulting in the same efficiency as the pure ITO cells. By replacing ITO a-Si with a high ne AZO a-Si the lowest RS is achieved. This AZO a-Si -AZO-ITO Ag structure saves about 70% ITO. Damp heat tests on cell and glass samples reveal a clear advantage of TCO stacks over AZO single layers.
{"title":"Reducing Indium Consumption in Silicon Hetero Junction Solar Cells With TCO Stack Systems of ITO and AZO","authors":"Philipp Schmid;Winfried Wolke;Henning Nagel;Leonard Tutsch;Vasileios Georgiou-Sarlikiotis;Anamaria Steinmetz;Sebastian Pingel;Jochen Rentsch;Martin Hermle;Martin Bivour","doi":"10.1109/JPHOTOV.2023.3267175","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2023.3267175","url":null,"abstract":"This article reports on the reduction of indium consumption in bifacial rear emitter n-type silicon heterojunction (SHJ) solar cells by substituting the transparent conducting oxide (TCO) indium tin oxide (ITO) with aluminum doped zinc oxide (AZO). AZO, ITO, and stacks of both TCOs are sputtered at room temperature and 170 °C on both sides of SHJ solar cells and glass samples. The short circuit current density (\u0000<italic>J<sub>SC</sub></i>\u0000) of AZO SHJ cells is lower than that of ITO-based cells, possibly due to a smaller optical band gap \u0000<italic>E</i>\u0000<sub>G</sub>\u0000 = 3.35 eV of AZO in contrast to \u0000<italic>E<sub>G</sub></i>\u0000 = 3.71 eV for ITO, which could lead to stronger parasitic blue absorption for AZO cells. Series resistance \u0000<italic>R</i>\u0000<sub>S</sub>\u0000 of pure AZO SHJ solar cells is high mainly due to high contact resistance \u0000<italic>R</i>\u0000<sub>C</sub>\u0000 between silver (Ag) metallization and AZO and high \u0000<italic>R</i>\u0000<sub>C</sub>\u0000 between amorphous silicon (a-Si) and the transparent AZO with low electron density \u0000<italic>n</i>\u0000<sub>e</sub>\u0000. Using ITO\u0000<sub>a-Si</sub>\u0000-AZO-ITO\u0000<sub>Ag</sub>\u0000 stacks, which saves about 50% of ITO, enables \u0000<italic>R<sub>S</sub></i>\u0000 values comparable to the ITO reference group, resulting in the same efficiency as the pure ITO cells. By replacing ITO\u0000<sub>a-Si</sub>\u0000 with a high \u0000<italic>n<sub>e</sub></i>\u0000 AZO\u0000<sub>a-Si</sub>\u0000 the lowest \u0000<italic>R<sub>S</sub></i>\u0000 is achieved. This AZO\u0000<sub>a-Si</sub>\u0000-AZO-ITO\u0000<sub>Ag</sub>\u0000 structure saves about 70% ITO. Damp heat tests on cell and glass samples reveal a clear advantage of TCO stacks over AZO single layers.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"13 5","pages":"646-655"},"PeriodicalIF":3.0,"publicationDate":"2023-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3494852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-08-10DOI: 10.1109/JPHOTOV.2023.3301132
Saravana Kumar;Henri Vahlman;Saed Al-Hajjawi;Christian Diestel;Jonas Haunschild;Stefan J. Rupitsch;Stefan Rein
In this article, we present a characterization technique for thin-film layers on textured surfaces with random pyramids using reflectance spectroscopy and an optical model based on the transfer-matrix method and rigorous polarization ray tracing. The optical model fits the thickness of ultrathin amorphous silicon (a-Si) layers from the measured reflectance using spectrophotometry and the measured optical constants using spectral ellipsometry. The estimated a-Si layer thickness from the optical model is compared with the measured thickness from transmission electron microscopy (TEM) images. Modeling the absolute reflectance spectrum, the a-Si stack thickness is underestimated by 51% mainly due to nonidealities such as varying pyramid base angles and scattering effects that are difficult to consider in the optical model. Modeling alternatively the differential reflectance spectrum, the a-Si stack thickness is determined in accordance with TEM measurements with relative error as low as 10%. Fitting the relative change in reflectance before and after a-Si deposition to determine the layer thickness makes the optical model robust against instrumental inaccuracies and superposed nonidealities. The on-the-fly nature of the developed optical characterization technique makes it suitable for high-throughput industrial applications.
{"title":"Inline Characterization of Ultrathin Amorphous Silicon Stacks in Silicon Heterojunction Solar Cell Precursors With Differential Reflectance Spectroscopy","authors":"Saravana Kumar;Henri Vahlman;Saed Al-Hajjawi;Christian Diestel;Jonas Haunschild;Stefan J. Rupitsch;Stefan Rein","doi":"10.1109/JPHOTOV.2023.3301132","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2023.3301132","url":null,"abstract":"In this article, we present a characterization technique for thin-film layers on textured surfaces with random pyramids using reflectance spectroscopy and an optical model based on the transfer-matrix method and rigorous polarization ray tracing. The optical model fits the thickness of ultrathin amorphous silicon (a-Si) layers from the measured reflectance using spectrophotometry and the measured optical constants using spectral ellipsometry. The estimated a-Si layer thickness from the optical model is compared with the measured thickness from transmission electron microscopy (TEM) images. Modeling the absolute reflectance spectrum, the a-Si stack thickness is underestimated by 51% mainly due to nonidealities such as varying pyramid base angles and scattering effects that are difficult to consider in the optical model. Modeling alternatively the differential reflectance spectrum, the a-Si stack thickness is determined in accordance with TEM measurements with relative error as low as 10%. Fitting the relative change in reflectance before and after a-Si deposition to determine the layer thickness makes the optical model robust against instrumental inaccuracies and superposed nonidealities. The on-the-fly nature of the developed optical characterization technique makes it suitable for high-throughput industrial applications.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"13 5","pages":"711-715"},"PeriodicalIF":3.0,"publicationDate":"2023-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3506361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-08-09DOI: 10.1109/JPHOTOV.2023.3299752
Zibo Zhou;Prateek Bahl;Svetlana Tkachenko;Asavari Hari;Charitha de Silva;Victoria Timchenko;Martin A. Green
Decreasing the operating temperature of a photovoltaic (PV) module can increase its electrical output and longevity. This can be achieved by increasing the radiative and convective heat losses on the front or the rear module surface. In this article, we have proposed and investigated, experimentally and numerically, a passive cooling method for the rooftop PV system, which enhances convection heat flux on the module's rear surface. As the vortex generators (VGs) are attached on the surface of the roof without physical contact to the module backsheet, this technique would not void the module warranty and can be easily retrofitted on an existing rooftop system. In the absence of wind (free convection), the module is subjected to the highest temperatures, and our VG design specifically targets this worst-case scenario. Our results reveal a temperature reduction of more than 4 °C using VGs in the configuration studied. This can be translated to a significant increase in module lifespan by around 30% to 40%, thus reducing the levelized cost of electricity.
{"title":"Vortex Generators for Passive Cooling of Rooftop Photovoltaic Systems Under Free Convection","authors":"Zibo Zhou;Prateek Bahl;Svetlana Tkachenko;Asavari Hari;Charitha de Silva;Victoria Timchenko;Martin A. Green","doi":"10.1109/JPHOTOV.2023.3299752","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2023.3299752","url":null,"abstract":"Decreasing the operating temperature of a photovoltaic (PV) module can increase its electrical output and longevity. This can be achieved by increasing the radiative and convective heat losses on the front or the rear module surface. In this article, we have proposed and investigated, experimentally and numerically, a passive cooling method for the rooftop PV system, which enhances convection heat flux on the module's rear surface. As the vortex generators (VGs) are attached on the surface of the roof without physical contact to the module backsheet, this technique would not void the module warranty and can be easily retrofitted on an existing rooftop system. In the absence of wind (free convection), the module is subjected to the highest temperatures, and our VG design specifically targets this worst-case scenario. Our results reveal a temperature reduction of more than 4 °C using VGs in the configuration studied. This can be translated to a significant increase in module lifespan by around 30% to 40%, thus reducing the levelized cost of electricity.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"13 5","pages":"743-749"},"PeriodicalIF":3.0,"publicationDate":"2023-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3515049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Microstructured antireflective coatings (ARCs) have been identified as a promising solution to reduce optical losses in concentrator photovoltaics’ (CPV) modules. We fabricated and tested in field a CPV module made of four monomodules with a concentration factor of 250× that embed either solar cells with microstructured encapsulating ARC or solar cells with multilayer ARC as a reference. The microstructured encapsulating ARC was made of semiburied silica beads in polydimethylsiloxane. The module was in operation for one year in the severe climatic conditions of Sherbrooke, QC, Canada, before extracting the monomodules performance. Despite a suboptimal module design, we report a monomodule efficiency of 29.7% at 900 W/m 2 for a cell with microstructured encapsulating ARC. This proves the potential of microstructured encapsulating ARC to enable high-performance CPV systems.
{"title":"Outdoor Characterization of Solar Cells With Microstructured Antireflective Coating in a Concentrator Photovoltaic Monomodule","authors":"Arnaud Joel Kinfack Leoga;Arnaud Ritou;Mathieu Blanchard;Lysandre Dirand;Yanis Prunier;Philippe St-Pierre;David Chuet;Philippe-Olivier Provost;Maïté Volatier;Vincent Aimez;Gwenaëlle Hamon;Abdelatif Jaouad;Christian Dubuc;Maxime Darnon","doi":"10.1109/JPHOTOV.2023.3295498","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2023.3295498","url":null,"abstract":"Microstructured antireflective coatings (ARCs) have been identified as a promising solution to reduce optical losses in concentrator photovoltaics’ (CPV) modules. We fabricated and tested in field a CPV module made of four monomodules with a concentration factor of 250× that embed either solar cells with microstructured encapsulating ARC or solar cells with multilayer ARC as a reference. The microstructured encapsulating ARC was made of semiburied silica beads in polydimethylsiloxane. The module was in operation for one year in the severe climatic conditions of Sherbrooke, QC, Canada, before extracting the monomodules performance. Despite a suboptimal module design, we report a monomodule efficiency of 29.7% at 900 W/m\u0000<sup>2</sup>\u0000 for a cell with microstructured encapsulating ARC. This proves the potential of microstructured encapsulating ARC to enable high-performance CPV systems.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"13 5","pages":"736-739"},"PeriodicalIF":3.0,"publicationDate":"2023-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/5503869/10234139/10213229.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3514146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-08-07DOI: 10.1109/JPHOTOV.2023.3299751
José G. Tirado-Serrato
In this work, the exact solution to the mean value theorem problem applied to the maximum power point (MPP) calculation is presented; besides, an improvement to this solution is developed based on an expression of the MPP that depends on the optimal load and the characteristic parameters of the photovoltaic module. Both approximations depend only on the natural logarithm, avoiding the evaluation of the Lambert-W function. The validation of the approximations is performed by comparing them with real measurements and the numerical solution of the five-parameter single-diode model using the dataset from 11 commercial modules and six different technologies, as well as by comparing them with existing approximations in the literature.
{"title":"Exact Solution to the Mean Value Theorem Applied to the Maximum Power Point Estimation","authors":"José G. Tirado-Serrato","doi":"10.1109/JPHOTOV.2023.3299751","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2023.3299751","url":null,"abstract":"In this work, the exact solution to the mean value theorem problem applied to the maximum power point (MPP) calculation is presented; besides, an improvement to this solution is developed based on an expression of the MPP that depends on the optimal load and the characteristic parameters of the photovoltaic module. Both approximations depend only on the natural logarithm, avoiding the evaluation of the Lambert-W function. The validation of the approximations is performed by comparing them with real measurements and the numerical solution of the five-parameter single-diode model using the dataset from 11 commercial modules and six different technologies, as well as by comparing them with existing approximations in the literature.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"13 5","pages":"750-755"},"PeriodicalIF":3.0,"publicationDate":"2023-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3502170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Excellent silicon surface passivation is achieved by atomic layer deposition (ALD) grown hafnium oxide (HfO x ) films on silicon surfaces (both n-type and p-type). It is inferred from the study that the silicon surface passivation by HfO x thin films is a film-thickness-dependent quality and a minimum film thickness of ∼2 nm is essential to passivate the silicon surface. A good level of surface passivation (surface recombination velocity, SRV< 20 cm/s) can be achieved for film thickness, d >5 nm. However, the best results are obtained for hydrogen-annealed, ∼8.5-nm-thin HfO x films. SRV as low as 3.5 cm/s (effective minority carrier lifetime, τ eff ∼5 ms) and 4.4 cm/s (τ eff ∼4 ms) are realized on p-type and n-type silicon surfaces, respectively. The injection level dependence of τ eff reveals that HfO x films provide better passivation for n-type silicon compared to p-type silicon at low injection levels. Hydrogen present in the annealing ambient first saturates the dangling bonds at the film/silicon interface and then affects the oxide charge density. Effective oxide charge density is positive in HfO x /n-Si samples and negative in HfO x /p-Si samples. This creates an accumulation condition near the silicon surface for both substrate-type situations and is responsible for effective passivation in both types of substrates. Thus, our study demonstrates that ALD-grown HfO x films offer excellent passivation for silicon surfaces.
{"title":"High-Quality Silicon Surface Passivation by Thermal-ALD Deposited Hafnium Oxide Films","authors":"Shweta Tomer;Meenakshi Devi;Abhishek Kumar;Shubha Laxmi;Subhashree Satapathy;Kamlesh Kumar Maurya;Preetam Singh;Prathap Pathi;Vandana Vandana","doi":"10.1109/JPHOTOV.2023.3295876","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2023.3295876","url":null,"abstract":"Excellent silicon surface passivation is achieved by atomic layer deposition (ALD) grown hafnium oxide (HfO\u0000<italic><sub>x</sub></i>\u0000) films on silicon surfaces (both n-type and p-type). It is inferred from the study that the silicon surface passivation by HfO\u0000<italic><sub>x</sub></i>\u0000 thin films is a film-thickness-dependent quality and a minimum film thickness of ∼2 nm is essential to passivate the silicon surface. A good level of surface passivation (surface recombination velocity, SRV< 20 cm/s) can be achieved for film thickness, \u0000<italic>d</i>\u0000 >5 nm. However, the best results are obtained for hydrogen-annealed, ∼8.5-nm-thin HfO\u0000<italic><sub>x</sub></i>\u0000 films. SRV as low as 3.5 cm/s (effective minority carrier lifetime, τ\u0000<sub>eff</sub>\u0000 ∼5 ms) and 4.4 cm/s (τ\u0000<sub>eff</sub>\u0000 ∼4 ms) are realized on p-type and n-type silicon surfaces, respectively. The injection level dependence of τ\u0000<sub>eff</sub>\u0000 reveals that HfO\u0000<italic><sub>x</sub></i>\u0000 films provide better passivation for n-type silicon compared to p-type silicon at low injection levels. Hydrogen present in the annealing ambient first saturates the dangling bonds at the film/silicon interface and then affects the oxide charge density. Effective oxide charge density is positive in HfO\u0000<italic><sub>x</sub></i>\u0000/n-Si samples and negative in HfO\u0000<italic><sub>x</sub></i>\u0000/p-Si samples. This creates an accumulation condition near the silicon surface for both substrate-type situations and is responsible for effective passivation in both types of substrates. Thus, our study demonstrates that ALD-grown HfO\u0000<italic><sub>x</sub></i>\u0000 films offer excellent passivation for silicon surfaces.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"13 5","pages":"691-698"},"PeriodicalIF":3.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3517614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：