A 0.9-V 36% PAE Broadband Continuous Class-F CMOS mm-Wave Power Amplifier Using Novel Current-Mode Power Combiner

IF 4.5 1区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Microwave Theory and Techniques Pub Date : 2024-07-24 DOI:10.1109/TMTT.2024.3430011
Anik Batabyal;Rajesh H. Zele;Santosh Kumar Khyalia;Huei Wang
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Abstract

This article presents a fully integrated broadband two-stage differential millimeter-wave (mm-Wave) power amplifier (PA) based on a novel current-mode power combiner. New harmonic terminations have been proposed to obtain an increase in power-added efficiency (PAE) over a wide range of frequencies. A capacitive third harmonic termination to the drain impedance at the output stage of PA provides flexibility in choosing a lower self-resonance frequency (SRF) of the transformer in the output matching network. The freedom of choosing a lower SRF enables the utilization of lateral coupling in the transformer (output matching network), which further removes the requirement of ultrathick top metal (UTM) layer. A low-cost solution has been developed and the PA shows improved performance even without UTM. The proposed idea generalizes the load impedance terminations and reduces the technology dependence of PA design. The PA operates both in the Ka-band and the fifth-generation (5G)-FR2 band. The PA fabricated in a 40-nm CMOS process without a UTM layer occupies a core area of 0.31 mm2. The proposed PA achieves 19.1 dB of measured small-signal gain at 28 GHz, a peak power output of 15.9 dBm from 28 to 31 GHz with a peak power-added efficiency (PAE) of 36% from a supply voltage of 0.9 V. The −3-dB bandwidth of 28.3% achieved by this design is one of the highest reported bandwidths for CMOS mm-Wave PAs. For 64-quadrature amplitude modulation (QAM) 5G-new radio (5G-NR) signal input with 200-MHz bandwidth, the PA shows a measured error vector magnitude (EVM) of −27 dB at 28 GHz and the adjacent channel leakage ratio (ACLR) $\approx -32$ dBc without utilizing digital predistortion (DPD).
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使用新型电流模式功率合路器的 0.9-V 36% PAE 宽带连续 F 类 CMOS 毫米波功率放大器
提出了一种基于新型电流模功率合成器的全集成宽带两级差分毫米波功率放大器。为了在宽频率范围内提高功率附加效率(PAE),提出了新的谐波终端。放大器输出级漏极阻抗的容性三次谐波端接提供了在输出匹配网络中选择较低自谐振频率(SRF)的灵活性。选择较低SRF的自由可以在变压器(输出匹配网络)中利用横向耦合,从而进一步消除了对超厚顶部金属(UTM)层的要求。开发了一种低成本的解决方案,即使没有UTM, PA的性能也有所提高。该方法推广了负载阻抗终端,降低了放大器设计的技术依赖性。PA同时在ka波段和第五代(5G)-FR2波段工作。无UTM层的40nm CMOS工艺制备的PA芯面积为0.31 mm2。该放大器在28 GHz时获得19.1 dB的测量小信号增益,在28 - 31 GHz范围内的峰值功率输出为15.9 dBm,在0.9 V电源电压下的峰值功率附加效率(PAE)为36%。该设计实现的- 3db带宽为28.3%,是CMOS毫米波PAs的最高带宽之一。对于带宽为200 mhz的64正交调幅(QAM) 5g -新无线电(5G-NR)信号输入,PA在28 GHz时的测量误差矢量幅度(EVM)为- 27 dB,相邻信道泄漏比(ACLR)约为-32 dBc,而不使用数字预失真(DPD)。
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来源期刊
IEEE Transactions on Microwave Theory and Techniques
IEEE Transactions on Microwave Theory and Techniques 工程技术-工程:电子与电气
CiteScore
8.60
自引率
18.60%
发文量
486
审稿时长
6 months
期刊介绍: The IEEE Transactions on Microwave Theory and Techniques focuses on that part of engineering and theory associated with microwave/millimeter-wave components, devices, circuits, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, and industrial, activities. Microwave theory and techniques relates to electromagnetic waves usually in the frequency region between a few MHz and a THz; other spectral regions and wave types are included within the scope of the Society whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design.
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